ST VNP28N04 User Manual

VNP28N04

"OMNIFET":

FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VNP28N04 42 V 0.035 Ω 28 A

■ LINEAR CURRENT LIMITATION

■ THERMAL SHUT DO W N

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT

clamp

R

DS(on)

I

lim

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

■ COMPATIBLE WITH STANDARD POWER

MOSFET

■ STANDARD TO-220 PAC KA GE

DESCRIP TION

The VNP28N04 is a monolithic device made

using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi-

BLOCK DIAG RAM

3

2

1

TO-220

tation and overvoltage clamp protect the chip

in harsh enviroments. Fault feedback can be detected by monitoring the

voltage at the input pin.

March 2004

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VNP28N04

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

P

T

THERMAL DATA

R

thj-case

R

thj-amb

Drain-source Voltage (Vin = 0) Internally Clamped V

DS

Input Voltage 18 V

in

I

Drain Current Internally Limited A

D

I

Reverse DC Output Current -28 A

R

Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V

esd

Total Dissipation at Tc = 25 oC83W

tot

T

Operating Junction Temperature Internally Limited

j

Case Operating Temperature Internally Limited

c

Storage Temperature -55 to 150

stg

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max

1.5

62.5

o o

o

C

o

C

o

C

C/W C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CLAMP

Drain-source Clamp

ID = 200 mA V

= 0 364248 V

in

Voltage

V

CLTH

Drain-source Clamp

ID = 2 mA V

= 0 35 V

in

Threshold Voltage

V

INCL

Input-Source Reverse

I

= -1 mA -1 -0.3 V

in

Clamp Voltage

I

DSS

ISS

Zero Input Voltage Drain Current (V

in

Supply Current from

= 0)

= 13 V V

V

DS

V

= 25 V V

DS

= 0

in

= 0

in

50

200

VDS = 0 V Vin = 10 V 250 500 µA

Input Pin

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

IN(th)

Input Threshold

V

= Vin ID + Iin = 1 mA 0.8 3 V

DS

Voltage

R

DS(on)

Static Drain-source On Resistance

Vin = 10 V ID = 14 A V

= 5 V ID = 14 A

in

0.035

0.05

DYNAMIC

µA µA

Ω Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

V

= 13 V ID = 14 A 14 18 S

DS

Transconductance

C

Output Capacitance V

oss

= 13 V f = 1 MHz V

DS

= 0 700 900 pF

in

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VNP28N04

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (∗∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

t

(di/dt)

Q

Turn-on Delay Time Rise Time

r

Turn-off Delay Time Fall Time

f

Turn-on Delay Time Rise Time

r

Turn-off Delay Time Fall Time

f

Turn-on Current Slope V

on

Total Input Charge VDD = 12 V ID = 10 A V

i

V

= 15 V Id = 14 A

DD

V

= 10 V R

gen

(see figure 3)

V

= 15 V Id = 14 A

DD

V

= 10 V R

gen

(see figure 3)

= 15 V ID = 14 A

DD

V

= 10 V R

in

gen

= 10 Ω

= 1000 Ω

= 10 Ω

= 10 V 60 nC

in

100 330 400 155

450

1.7

7.5

3.4 35 A/µs

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(∗) Forward On Voltage ISD = 14 A Vin = 0 1.6 V

SD

trr (∗∗)

Q

rr

I

RRM

(∗∗)

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I

= 14 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 25 oC

DD

(see test circuit, figure 5)

180

0.45

200 600 700 300

700

3

10

5

7

ns ns ns ns

ns

µs µs µs

ns

µC

A

PROTECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

lim

t

dlim

T

jsh

T

jrs

I

(∗∗) Fault Sink Current Vin = 10 V VDS = 13 V

gf

E

as

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterizat i on

Drain Current Limit Vin = 10 V VDS = 13 V

V

= 5 V VDS = 13 V

in

(∗∗) Step Response

Current Limit

Vin = 10 V V

= 5 V

in

(∗∗) Overtemperature

20 20

150

Shutdown

(∗∗) Overtemperature Reset 135

V

= 5 V VDS = 13 V

in

(∗∗) Single Pulse

Avalanche Energy

starting Tj = 25 oC VDD = 20 V V

= 10 V R

in

= 1 KΩ L = 10 mH

gen

2.5 J

28 28

25 70

50 20

40 40

40

120

A A

µs µs

o

C

o

C

mA mA

3/11

VNP28N04

PROTECTION FEATURES

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (I

) flows into the Input pin in order to

iss

supply the internal circuitry. The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 restarted when the chip temperature falls below 135

o

C. The device is automatically

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R

DS(on)

).

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