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VNN1NV04P-E
User Manual
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ST VNN1NV04P-E, VNS1NV04P-E User Manual

VNN1NV04P-E, VNS1NV04P-E
Features
Parameter Symbol Value
Max on-state resistance (per ch.) R
Current limitation (typ) I
Drain-source clamp voltage V
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
LIMH
CLAMP
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
ON
250 mΩ
1.7 A
40 V
OMNIFET II
fully autoprotected Power MOSFET
2
3
2
1
SOT-223
Description
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
SO-8
Fault feedback can be detected by monitoring the voltage at the input pin.

Table 1. Device summary

Order codes
Package
Tube Tape and reel
SOT-223 VNN1NV04P-E VNN1NV04PTR-E
SO-8 VNS1NV04P-E VNS1NV04PTR-E
October 2009 Doc ID 15586 Rev 2 1/28
www.st.com
28
Contents VNN1NV04P-E, VNS1NV04P-E
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1 SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.2 SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.4 SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2/28 Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 6. SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 7. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 8. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 15586 Rev 2 3/28
List of figures VNN1NV04P-E, VNS1NV04P-E
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 31. SOT-223 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . 17
Figure 32. SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 33. SOT-223 thermal fitting model of a single channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 34. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 35. SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 19
Figure 36. SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 37. SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 38. SOT-223 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 39. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 40. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 41. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 42. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4/28 Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Over
Temperature

Figure 2. Configuration diagram (top view)

SOURCE
SOURCE
SOURCE
INPUT
1
4
(a)
Linear
Current
Limiter
3
SOURCE
8
DRAIN
DRAIN
DRAIN
5
DRAIN
a. For the pins configuration related to SOT-223 see outline at page 1.
Doc ID 15586 Rev 2 5/28
Electrical specifications VNN1NV04P-E, VNS1NV04P-E

2 Electrical specifications

Figure 3. Current and voltage conventions

I
D
V
DS
R
I
IN
IN
INPUT
V
IN

2.1 Absolute maximum ratings

DRAIN
SOURCE
Stress values that exceed those listed in the “Absolute maximum ratings” table can cause permanent damage to the device. These are stress ratings only, and operation of the device at these, or any other conditions greater than those, indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics sure program and other relevant quality documents.

Table 2. Absolute maximum ratings

Symbol Parameter
V
DSn
V
I
INn
R
IN MINn
I
Dn
I
Rn
V
ESD1
V
ESD2
P
T
T
T
Drain-source voltage (V
Input voltage Internally clamped V
INn
=0 V) Internally clamped V
INn
Input current +/-20 mA
Minimum input series impedance 330 Ω
Drain current Internally limited A
Reverse DC output current -3 A
Electrostatic discharge (R=1.5 KΩ, C=100 pF) 4000 V
Electrostatic discharge on output pins only (R=330 Ω, C=150 pF)
Total dissipation at Tc=25 °C 7 8.3 W
tot
Operating junction temperature Internally limited °C
j
Case operating temperature Internally limited °C
c
Storage temperature -55 to 150 °C
stg
Value
Unit
SOT-223 SO-8
16500 V
6/28 Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E Electrical specifications

2.2 Thermal data

Table 3. Thermal data

Max value
Symbol Parameter
SOT-223 SO-8
Unit
R
thj-case
R
thj-lead
R
thj-amb
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected to all DRAIN pins
Thermal resistance junction-case 18 °C/W
Thermal resistance junction-lead 15 °C/W
Thermal resistance junction-ambient 70
(1)
65
(1)

2.3 Electrical characteristics

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min Typ Max Unit
Off (-40 °C<Tj<150 °C, unless otherwise specified)
V
CLAMP
V
CLTH
V
INTH
I
ISS
V
INCL
I
DSS
On (-40 °C<Tj<150 °C, unless otherwise specified)
Drain-source clamp voltage VIN=0 V; ID=0.5 A 40 45 55 V
Drain-source clamp threshold voltage
V
=0 V; ID=2 mA 36 V
IN
Input threshold voltage VDS=VIN; ID=1 mA 0.5 2.5 V
Supply current from input pin VDS=0 V; VIN=5 V 100 150 µA
Input-source clamp voltage
Zero input voltage drain current (VIN=0 V)
IIN=1 mA
=-1 mA
I
IN
=13 V; VIN=0 V; Tj=25 °C
V
DS
=25 V; VIN=0 V
V
DS
6
-1.0
6.8 8
-0.3
30 75
°C/W
V
µA
R
DS(on)
Dynamic (T
(1)
g
fs
C
OSS
Switching (T
t
d(on)
t
r
t
d(off)
t
f
Static drain-source on resistance
=25 °C, unless otherwise specified)
j
V
IN
V
IN
=5 V; ID=0.5 A; Tj=25 °C =5 V; ID=0.5 A
250 500
mΩ
Forward transconductance VDD=13 V; ID=0.5 A 2 S
Output capacitance VDS=13 V; f=1 MHz; VIN=0 V 90 pF
=25 °C, unless otherwise specified)
j
Turn-on delay time
V
=15 V; ID=0.5 A
Rise time 170 500 ns
Turn-off delay time 350 1000 ns
DD
V
=5 V; R
gen
gen=RIN MIN
(see Figure 4)
=330 Ω
70 200 ns
Fall time 200 600 ns
Doc ID 15586 Rev 2 7/28
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
t
d(off)
t
(dI/dt)
Q
Source drain diode (T
V
SD
t
Qrr Reverse recovery charge 100 nC
I
RRM
Protections (-40 °C<T
I
lim
t
dlim
T
jsh
T
I
Eas Single pulse avalanche energy
Turn-on delay time
V
=15 V; ID=0.5 A
Rise time 1.3 4.0 µs
r
Turn-off delay time 1.8 5.5 µs
Fall time 1.2 4.0 µs
f
Turn-on current slope
on
Total input charge
i
=25 °C, unless otherwise specified)
j
(1)
Forward on voltage ISD=0.5 A; VIN=0 V 0.8 V
Reverse recovery time
rr
Reverse recovery current 0.7 A
<150 °C, unless otherwise specified)
j
DD
V
gen
=5 V; R
=2.2 KΩ
gen
(see Figure 4)
VDD=15 V; ID=1.5 A V
gen
=5 V; R
gen=RIN MIN
=330 Ω
VDD=12 V; ID=0.5 A; VIN=5 V I
=2.13 mA (see Figure 7)
gen
=0.5 A; dI/dt=6 A/µs
I
SD
=30 V; L=200 µH
V
DD
(see Figure 5)
0.25 1.0 µs
5A/µs
5nC
205 ns
Drain current limit VIN=5 V; VDS=13 V 1.7 3.5 A
Step response current limit VIN=5 V; VDS=13 V 2.0 µs
Over temperature shutdown 150 175 200 °C
Over temperature reset 135 °C
jrs
Fault sink current VIN=5 V; VDS=13 V; Tj=T
gf
Starting T
=5 V R
V
IN
L=50 mH
jsh
=25 °C; VDD=24 V
j
gen=RIN MIN
=330 Ω;
10 15 20 mA
55 mJ
(see Figure 6 and Figure 8)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
8/28 Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Figure 4.
Switching time test circuit for resistive load
R
V
gen
I
D
90%
t
d(off)
t
f
t
r
t
V
gen
d(on)
10%
V
gen
D
t
t
Doc ID 15586 Rev 2 9/28
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