ST VNN1NV04P-E, VNS1NV04P-E User Manual

VNN1NV04P-E, VNS1NV04P-E

Features

Parameter Symbol Value

Max on-state resistance (per ch.) R

Current limitation (typ) I

Drain-source clamp voltage V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power

LIMH

CLAMP

MOSFET (analog driving)

■ Compatible with standard Power MOSFET

ON

250 mΩ

1.7 A

40 V

OMNIFET II

fully autoprotected Power MOSFET

2

3

2

1

SOT-223

Description

The VNN1NV04P-E, VNS1NV04P-E are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.

SO-8

Fault feedback can be detected by monitoring the
voltage at the input pin.

Table 1. Device summary

Order codes

Package

Tube Tape and reel

SOT-223 VNN1NV04P-E VNN1NV04PTR-E

SO-8 VNS1NV04P-E VNS1NV04PTR-E

October 2009 Doc ID 15586 Rev 2 1/28

www.st.com

28

Contents VNN1NV04P-E, VNS1NV04P-E

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.1 SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.2 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5.2 SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

5.3 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

5.4 SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

2/28 Doc ID 15586 Rev 2

VNN1NV04P-E, VNS1NV04P-E List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 5. SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Table 6. SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Table 7. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 8. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Doc ID 15586 Rev 2 3/28

List of figures VNN1NV04P-E, VNS1NV04P-E

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 12. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 13. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 17. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 18. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 21. Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 23. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 24. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 30. SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 31. SOT-223 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . 17

Figure 32. SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 33. SOT-223 thermal fitting model of a single channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 34. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 35. SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 19

Figure 36. SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 37. SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 38. SOT-223 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 39. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 40. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 41. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 42. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

4/28 Doc ID 15586 Rev 2

VNN1NV04P-E, VNS1NV04P-E Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

DRAIN

2

Overvoltage

Clamp

INPUT

1

Gate

Control

Over

Temperature

Figure 2. Configuration diagram (top view)

SOURCE

SOURCE

SOURCE

INPUT

1

4

(a)

Linear

Current

Limiter

3

SOURCE

8

DRAIN

DRAIN

DRAIN

5

DRAIN

a. For the pins configuration related to SOT-223 see outline at page 1.

Doc ID 15586 Rev 2 5/28

Electrical specifications VNN1NV04P-E, VNS1NV04P-E

2 Electrical specifications

Figure 3. Current and voltage conventions

I

D

V

DS

R

I

IN

IN

INPUT

V

IN

2.1 Absolute maximum ratings

DRAIN

SOURCE

Stress values that exceed those listed in the “Absolute maximum ratings” table can cause
permanent damage to the device. These are stress ratings only, and operation of the device
at these, or any other conditions greater than those, indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.

Table 2. Absolute maximum ratings

Symbol Parameter

V

DSn

V

I

INn

R

IN MINn

I

Dn

I

Rn

V

ESD1

V

ESD2

P

T

T

T

Drain-source voltage (V

Input voltage Internally clamped V

INn

=0 V) Internally clamped V

INn

Input current +/-20 mA

Minimum input series impedance 330 Ω

Drain current Internally limited A

Reverse DC output current -3 A

Electrostatic discharge (R=1.5 KΩ, C=100 pF) 4000 V

Electrostatic discharge on output pins only
(R=330 Ω, C=150 pF)

Total dissipation at Tc=25 °C 7 8.3 W

tot

Operating junction temperature Internally limited °C

j

Case operating temperature Internally limited °C

c

Storage temperature -55 to 150 °C

stg

Value

Unit

SOT-223 SO-8

16500 V

6/28 Doc ID 15586 Rev 2

VNN1NV04P-E, VNS1NV04P-E Electrical specifications

2.2 Thermal data

Table 3. Thermal data

Max value

Symbol Parameter

SOT-223 SO-8

Unit

R

thj-case

R

thj-lead

R

thj-amb

1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected
to all DRAIN pins

Thermal resistance junction-case 18 °C/W

Thermal resistance junction-lead 15 °C/W

Thermal resistance junction-ambient 70

(1)

65

(1)

2.3 Electrical characteristics

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min Typ Max Unit

Off (-40 °C<Tj<150 °C, unless otherwise specified)

V

CLAMP

V

CLTH

V

INTH

I

ISS

V

INCL

I

DSS

On (-40 °C<Tj<150 °C, unless otherwise specified)

Drain-source clamp voltage VIN=0 V; ID=0.5 A 40 45 55 V

Drain-source clamp threshold
voltage

V

=0 V; ID=2 mA 36 V

IN

Input threshold voltage VDS=VIN; ID=1 mA 0.5 2.5 V

Supply current from input pin VDS=0 V; VIN=5 V 100 150 µA

Input-source clamp
voltage

Zero input voltage drain current
(VIN=0 V)

IIN=1 mA

=-1 mA

I

IN

=13 V; VIN=0 V; Tj=25 °C

V

DS

=25 V; VIN=0 V

V

DS

6

-1.0

6.8 8

-0.3

30
75

°C/W

V

µA

R

DS(on)

Dynamic (T

(1)

g

fs

C

OSS

Switching (T

t

d(on)

t

r

t

d(off)

t

f

Static drain-source on
resistance

=25 °C, unless otherwise specified)

j

V

IN

V

IN

=5 V; ID=0.5 A; Tj=25 °C
=5 V; ID=0.5 A

250
500

mΩ

Forward transconductance VDD=13 V; ID=0.5 A 2 S

Output capacitance VDS=13 V; f=1 MHz; VIN=0 V 90 pF

=25 °C, unless otherwise specified)

j

Turn-on delay time

V

=15 V; ID=0.5 A

Rise time 170 500 ns

Turn-off delay time 350 1000 ns

DD

V

=5 V; R

gen

gen=RIN MIN

(see Figure 4)

=330 Ω

70 200 ns

Fall time 200 600 ns

Doc ID 15586 Rev 2 7/28

Electrical specifications VNN1NV04P-E, VNS1NV04P-E

Table 4. Electrical characteristics (continued)

Symbol Parameter Test conditions Min Typ Max Unit

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Source drain diode (T

V

SD

t

Qrr Reverse recovery charge 100 nC

I

RRM

Protections (-40 °C<T

I

lim

t

dlim

T

jsh

T

I

Eas Single pulse avalanche energy

Turn-on delay time

V

=15 V; ID=0.5 A

Rise time 1.3 4.0 µs

r

Turn-off delay time 1.8 5.5 µs

Fall time 1.2 4.0 µs

f

Turn-on current slope

on

Total input charge

i

=25 °C, unless otherwise specified)

j

(1)

Forward on voltage ISD=0.5 A; VIN=0 V 0.8 V

Reverse recovery time

rr

Reverse recovery current 0.7 A

<150 °C, unless otherwise specified)

j

DD

V

gen

=5 V; R

=2.2 KΩ

gen

(see Figure 4)

VDD=15 V; ID=1.5 A
V

gen

=5 V; R

gen=RIN MIN

=330 Ω

VDD=12 V; ID=0.5 A; VIN=5 V
I

=2.13 mA (see Figure 7)

gen

=0.5 A; dI/dt=6 A/µs

I

SD

=30 V; L=200 µH

V

DD

(see Figure 5)

0.25 1.0 µs

5A/µs

5nC

205 ns

Drain current limit VIN=5 V; VDS=13 V 1.7 3.5 A

Step response current limit VIN=5 V; VDS=13 V 2.0 µs

Over temperature shutdown 150 175 200 °C

Over temperature reset 135 °C

jrs

Fault sink current VIN=5 V; VDS=13 V; Tj=T

gf

Starting T

=5 V R

V

IN

L=50 mH

jsh

=25 °C; VDD=24 V

j

gen=RIN MIN

=330 Ω;

10 15 20 mA

55 mJ

(see Figure 6 and Figure 8)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

8/28 Doc ID 15586 Rev 2

VNN1NV04P-E, VNS1NV04P-E Electrical specifications

Figure 4.

Switching time test circuit for resistive load

R

V

gen

I

D

90%

t

d(off)

t

f

t

r

t

V

gen

d(on)

10%

V

gen

D

t

t

Doc ID 15586 Rev 2 9/28