ST VND1NV04, VNN1NV04, VNS1NV04 User Manual

Features

VND1NV04

VNN1NV04 - VNS1NV04

OMNIFET II

fully autoprotected Power MOSFET

Parameter Symbol Value

Max on-state resistance (per ch.) R

Current limitation (typ) I

Drain-source clamp voltage V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power

LIMH

CLAMP

ON

250 mΩ

1.7 A

40 V

MOSFET (analog driving)

■ Compatible with standard Power MOSFET

3

1

TO-252 (DPAK)

2

3

2

1

SOT-223

SO-8

Description

The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics
intended for replacement of standard Power
MOSFETs from DC up to 50 KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.

Fault feedback can be detected by monitoring the
voltage at the input pin.

®

VIPower® M0-3 Technology,

Table 1. Device summary

Order codes

Package

Tube Tube (lead free) Tape and reel Tape and reel (lead free)

TO-252 (DPAK) VND1NV04 VND1NV04-E VND1NV0413TR VND1NV04TR-E

SOT-223 VNN1NV04 - VNN1NV0413TR -

SO-8 VNS1NV04 - VNS1NV0413TR -

December 2011 Doc ID 7381 Rev 3 1/33

www.st.com

1

Contents VND1NV04 - VNN1NV04 - VNS1NV04

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.1 DPAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.2 SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.3 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

5.1 DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

5.2 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

5.3 SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

5.4 DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

5.5 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

5.6 SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

2/33 Doc ID 7381 Rev 3

VND1NV04 - VNN1NV04 - VNS1NV04 List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 5. DPAK thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Table 6. SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Table 7. SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Table 8. DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 9. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 10. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Doc ID 7381 Rev 3 3/33

List of figures VND1NV04 - VNN1NV04 - VNS1NV04

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 12. Static drain-source on resistance vs. input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 13. Static drain-source on resistance vs. input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 15. Static drain-source on resistance vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 17. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 18. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 19. Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 21. Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 23. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 24. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 26. Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 27. Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 28. Normalized current limit vs. junction temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 30. DPAK PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 31. DPAK Rthj-amb vs. PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . 17

Figure 32. DPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 33. DPAK thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 34. SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 35. SOT-223 Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . 20

Figure 36. SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 37. SOT-223 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 38. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 39. SO-8 Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . 22

Figure 40. SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 41. SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 42. DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 43. SOT-223 mechanical data & package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 44. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Figure 45. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 46. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 47. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

4/33 Doc ID 7381 Rev 3

VND1NV04 - VNN1NV04 - VNS1NV04 Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

DRAIN

2

Overvoltage

Clamp

INPUT

1

Gate

Control

Over

Temperature

Linear

Current

Limiter

Figure 2. Configuration diagram (top view)

SOURCE

1

8

SOURCE

SOURCE

INPUT

1. For the pins configuration related to SOT-223 and DPAK see outline at page 1.

4

5

DRAIN

DRAIN

DRAIN

DRAIN

3

SOURCE

Doc ID 7381 Rev 3 5/33

Electrical specifications VND1NV04 - VNN1NV04 - VNS1NV04

2 Electrical specifications

Figure 3. Current and voltage conventions

I

D

V

DS

R

I

IN

IN

INPUT

V

IN

2.1 Absolute maximum ratings

DRAIN

SOURCE

The rating listed in Table 2: Absolute maximum ratings may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to Absolute maximum rating conditions for extended periods may affect device
reliability.

Table 2. Absolute maximum ratings

Symbol Parameter

V

V

I

R

IN MINn

V

ESD1

V

ESD2

P

T

Drain-source voltage (V

DSn

Input voltage Internally clamped V

INn

Input current +/-20 mA

INn

=0 V) Internally clamped V

INn

Minimum input series impedance 330 Ω

Drain current Internally limited A

I

Dn

I

Reverse DC output current -3 A

Rn

Electrostatic discharge (R=1.5 KΩ, C=100 pF) 4000 V

Electrostatic discharge on output pins only
(R=330 Ω, C=150 pF)

Total dissipation at Tc=25 °C 7 8.3 35 W

tot

T

Operating junction temperature Internally limited °C

j

T

Case operating temperature Internally limited °C

c

Storage temperature -55 to 150 °C

stg

SOT-223 SO-8 DPAK

Value

Unit

16500 V

6/33 Doc ID 7381 Rev 3

VND1NV04 - VNN1NV04 - VNS1NV04 Electrical specifications

2.2 Thermal data

Table 3. Thermal data

Maximum value

Symbol Parameter

SOT-223 SO-8 DPAK

Unit

R

thj-case

R

thj-lead

R

thj-amb

1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected
to all DRAIN pins

Thermal resistance junction-case 18 3.5 °C/W

Thermal resistance junction-lead 15 °C/W

Thermal resistance junction-ambient 70

2.3 Electrical characteristics

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Off (-40 °C<Tj<150 °C, unless otherwise specified)

V

CLAMP

V

CLTH

V

INTH

I

V

INCL

I

DSS

On (-40 °C<Tj<150 °C, unless otherwise specified)

Drain-source clamp
voltage

Drain-source clamp
threshold voltage

Input threshold
voltage

Supply current from

ISS

input pin

Input-source clamp
voltage

Zero input voltage
drain current
(V

IN

=0 V)

=0 V; ID=0.5 A 40 45 55 V

V

IN

=0 V; ID=2 mA 36 V

V

IN

V

DS=VIN

=0 V; VIN=5 V 100 150 µA

V

DS

I

=1 mA 6 6.8 8 V

IN

I

=-1 mA -1.0 -0.3

IN

V

=13 V; VIN=0 V; Tj=25 °C 30 µA

DS

=25 V; VIN=0 V 75

V

DS

(1)

65

(1)

54

(1)

°C/W

; ID=1 mA 0.5 2.5 V

R

DS(on)

Dynamic (T

(1)

g

fs

C

OSS

=5 V; ID=0.5 A; Tj=25 °C 250 mΩ

V

Static drain-source on
resistance

=25 °C, unless otherwise specified)

j

Forward
transconductance

IN

V

=5 V; ID=0.5 A 500

IN

V

=13 V; ID=0.5 A 2 S

DD

Output capacitance VDS=13 V; f=1 MHz; VIN=0 V 90 pF

Doc ID 7381 Rev 3 7/33

Electrical specifications VND1NV04 - VNN1NV04 - VNS1NV04

Table 4. Electrical characteristics (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Switching (T

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

(dI/dt)

on

Q

i

=25 °C, unless otherwise specified)

j

Turn-on delay time

Rise time 170 500 ns

Turn-off delay time 350 1000 ns

Fall time 200 600 ns

Turn-on delay time

Rise time 1.3 4.0 µs

Turn-off delay time 1.8 5.5 µs

Fall time 1.2 4.0 µs

Turn-on current slope

Total input charge

Source drain diode (T

(1)

V

SD

Qrr

I

RRM

Forward on voltage ISD=0.5 A; VIN=0 V 0.8 V

Reverse recovery

t

rr

time

Reverse recovery
charge

Reverse recovery
current

V

=15 V; ID=0.5 A

DD

V

gen

=5 V; R

gen=RIN MIN

=330 Ω

(see Figure 4)

=15 V; ID=0.5 A

V

DD

V

gen

=5 V; R

=2.2 KΩ

gen

(see Figure 4)

VDD=15 V; ID=1.5 A

=5 V; R

V

gen

V

=12 V; ID=0.5 A; VIN=5 V

DD

=2.13 mA (see Figure 7)

I

gen

=25 °C, unless otherwise specified)

j

I

=0.5 A; dI/dt=6 A/µs

SD

=30V; L=200µH

V

DD

gen=RIN MIN

=330 Ω

(see Figure 5)

70 200 ns

0.25 1.0 µs

5A/µs

5nC

205 ns

100 nC

0.7 A

Protections (-40 °C<Tj<150 °C, unless otherwise specified)

I

t

dlim

T

T

Drain current limit VIN=5 V; VDS=13 V 1.7 3.5 A

lim

Step response
current limit

Overtemperature

jsh

shutdown

Overtemperature

jrs

reset

Fault sink current VIN=5 V; VDS=13 V; Tj=T

I

gf

VIN=5 V; VDS=13 V 2.0 µs

Starting Tj=25 °C; VDD=24 V

Single pulse

E

as

avalanche energy

=5 V R

V

IN

L=50 mH

gen=RIN MIN

(see Figure 6 and Figure 8)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

8/33 Doc ID 7381 Rev 3

jsh

=330 Ω;

150 175 200 °C

135 °C

10 15 20 mA

55 mJ

VND1NV04 - VNN1NV04 - VNS1NV04 Electrical specifications

Figure 4.

Switching time test circuit for resistive load

R

V

gen

I

D

90%

t

d(off)

t

f

t

r

t

V

gen

d(on)

10%

V

gen

D

t

t

Doc ID 7381 Rev 3 9/33

Electrical specifications VND1NV04 - VNN1NV04 - VNS1NV04

Figure 5.

Test circuit for diode recovery times

A

D

330

I

OMNIFET

Ω

S

V

gen

FAS T
DIODE

B

R

gen

I

A

B

OMNIFET

L=100uH

D

S

8.5

V

DD

Ω

Figure 6. Unclamped inductive load test circuits

R

V

IN

P

W

GEN

10/33 Doc ID 7381 Rev 3