ST VND7N04, VND7N04-1, VNK7N04FM User Manual

VND7N04, VND7N04-1 VNK7N04FM

"OMNIFET": Fully autoprotected power MOSFET

Features

Type	Vclamp	RDS(on)	Ilim
VND7N04	42 V	0.14 Ω	7 A
VND7N04-1	42 V	0.14 Ω	7 A
VNK7N04FM	42 V	0.14 Ω	7 A

■Linear current limitation

■Thermal shut down

■Short circuit protection

■Integrated clamp

■Low current drawn from input pin

■Diagnostic feedback through input pin

■ESD protection

■Direct access to the gate of the power MOSFET (analog driving)

■Compatible with standard power MOSFET

Description

The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Table 1.	Device summary
Part number		Order code
		VND7N04, VND7N04-1-E,
VND7N04		VND7N04-E, VND7N0413TR,
		VND7N04TR-E
VND7N04-1		VND7N04-1
VNK7N04FM		VNK7N04FM

March 2009

Rev 1

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www.st.com

Contents	VND7N04, VND7N04-1, VNK7N04FM

Contents

1	Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.2	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
3	Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		7
4	Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		13
5	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16

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VND7N04, VND7N04-1, VNK7N04FM	Block diagram

1 Block diagram

Figure 1. Block diagram

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Electrical specification	VND7N04, VND7N04-1, VNK7N04FM

2 Electrical specification

2.1Absolute maximum rating

Table 2.	Absolute maximum rating
			Value
Symbol	Parameter				Unit
		DPAK		SOT-82FM
		IPAK
VDS	Drain-source voltage (Vin = 0)	Internally clamped			V
Vin	Input voltage		18		V
ID	Drain current	Internally limited			A
IR	Reverse DC output current		-7		A
Vesd	Electrostatic discharge (C = 100 pF,		2000		V
	R=1.5 KΩ)
Ptot	Total dissipation at Tc = 25 °C	60		9	W
Tj	Operating junction temperature	Internally limited			°C
Tc	Case operating temperature	Internally limited			° C
Tstg	Storage temperature		-55 to 150		° C

2.2Thermal data

Table 3.	Thermal data
		DPAK/IPAK	SOT82-FM
Rthj-case	Thermal resistance junction-case max	3.75	14	°C/W
Rthj-amb	Thermal resistance junction-ambient max	100	100	°C/W

2.3Electrical characteristics

Table 4.	Electrical characteristics: off
	(-40 < Tj < 125 °C unless otherwise specified)
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
VCLAMP	Drain-source clamp voltage	ID = 200 mA Vin = 0	32	42	52	V
VCLTH	Drain-source clamp threshold voltage	ID = 2 mA Vin = 0	31			V
VINCL	Input-source reverse clamp voltage	Iin = -1 mA	-1.1		-0.25	V
IDSS	Zero input voltage drain current (Vin = 0)	VDS = 13 V Vin = 0			75	µA
		VDS = 25 V Vin = 0			200	µA
IISS	Supply current from input pin	VDS = 0 V Vin = 10 V		250	550	µA

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VND7N04, VND7N04-1, VNK7N04FM

Electrical specification

Table 5.

Electrical characteristics: on

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIN(th)

Input threshold voltage

VDS = Vin ID + Iin = 1 mA

0.8

3

V

Vin = 10 V ID = 3.5 A

0.14

Ω

Vin = 5 V ID = 3.5 A

0.28

Ω

RDS(on)

Static drain-source on resistance

-40 < Tj < 25 °C

Ω

Vin = 10 V ID = 3.5 A

0.28

Vin = 5 V ID = 3.5 A

0.56

Ω

Tj = 125 °C

Table 6.

Electrical characteristics: dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Forward

VDS = 13 V ID = 3.5 A

2

5

S

transconductance

Coss

Output capacitance

VDS = 13 V f = 1 MHz Vin = 0

250

500

pF

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Table 7.

Electrical characteristics: switching

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 15 V Id = 3.5 A

50

150

ns

tr

Rise time

Vgen = 10 V Rgen = 10 Ω

60

180

ns

td(off)

Turn-off delay time

(see Figure 26)

130

300

ns

tf

Fall time

50

200

ns

td(on)

Turn-on delay time

VDD = 15 V Id = 3.5 A

140

500

ns

tr

Rise time

Vgen = 10 V Rgen = 1000 Ω

0.4

1.1

µs

td(off)

Turn-off delay time

(see Figure 26)

2.5

7

µs

tf

Fall time

1

4

µs

(di/dt)on

Turn-on current slope

VDD = 15 V ID = 3.5 A

50

A/µs

Vin = 10 V Rgen = 10 Ω

Qi

Total input charge

VDD = 12 V ID = 3.5 A Vin = 10 V

18

nC

Table 8.

Electrical characteristics: source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Forward on voltage

ISD = 3.5 A Vin = 0

1.7

V

VSD

trr

(2)

Reverse recovery time

ISD = 3.5 A di/dt = 100 A/µs

40

ns

Qrr

(2)

Reverse recovery charge

VDD = 30 V Tj = 25 °C

0.2

µC

(2)

Reverse recovery current

(see test circuit, Figure 28)

3.6

A

IRRM

1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2.Parameters guaranteed by design/characterization

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Electrical specification			VND7N04, VND7N04-1, VNK7N04FM
Table 9.	Electrical characteristics: protection
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
Ilim	Drain current limit	Vin = 10 V VDS = 13 V		4	7	11	A
		Vin = 5 V VDS = 13 V		4	7	11	A
(1)	Step response	Vin = 10 V			13	20	µs
tdlim	Current limit	Vin = 5 V			15	25	µs
(1)	Overtemperature
Tjsh	shutdown			150			°C
(1)	Overtemperature reset			135			° C
Tjrs
Igf (1)	Fault sink current	Vin = 10 V VDS = 13 V			50		mA
		Vin = 5 V VDS = 13 V			20		mA
(1)	Single pulse avalanche	starting Tj = 25°C V DD = 20 V		0.4			J
Eas	energy	Vin = 10 V Rgen = 1 KΩ L = 30 mH

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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