The VNI4140K-32 is a monolithic device made
using STMicroelectronics VIPower technology,
intended for driving four independent resistive,
capacitive or inductive loads with one side
connected to ground. Active current limitation
avoids the system power supply dropping in the
case of shorted load. Built-in thermal shutdown
protects the chip from overtemperature and shortcircuit. In overload condition, the channel turns
OFF and back ON automatically so as to maintain
junction temperature between T
condition causes case temperature to reach
T
, the overloaded channel is turned OFF and
CSD
restarts only when case temperature has
decreased down to T
. In the case of more than
CR
one channel in overload, re-start of the
overloaded channels is not simultaneous, in order
to avoid high peak current from the supply. Nonoverloaded channels continue to operate
normally. The open drain diagnostic outputs
indicate overtemperature conditions.
and TR. If this
TSD
Figure 1.Block diagram
March 2012Doc ID022576 Rev 31/26
This is information on a product in full production.
10.5 V < VCC < 36 V; -40 °C < TJ < 125 °C; unless otherwise specified.
Table 5.Power section
SymbolParameterTest conditionMin.Typ.Max.Unit
VccSupply voltage10.536V
I
R
DS(ON)
V
clamp
= 0.7 A at TJ = 25 °C
ON state resistance
OUT
I
OUT
= 0.7 A
Is = 20 mA414552V
I
S
Supply current
All channels in OFF state,
ON state with V
IN
= 5 V
250
2.44
0.080
0.140ΩΩ
µA
mA
V
OUT(OFF)
I
OUT(OFF)
I
LGND
F
1. To cover EN55022 class A and class B normative.
= 24 V; -25 °C < TJ < 125 °C, RL = 48 Ω, input rise time < 0.1 µs)
V
CC
OFF state output
voltage
OFF state output
current
Output current in
ground disconnection
Charge pump
CP
frequency
V
= 0 V and I
IN
V
= V
IN
= V
V
cc
= 0 V05µA
OUT
= GND = 24 V;
IN
= 0 A1V
OUT
TJ = 125 °C
Channel in ON state
(1)
500µA
1450kHz
Table 6.Switching
SymbolParameterTest conditionMin.Typ.Max.Unit
t
d
t
d
(OFF)
dV/dt
dV/dt
(ON)
Tu r n O N d el ay 6µ S
t
Rise time 5µS
r
Turn OFF 12µS
t
Fall time 5µS
f
Turn ON voltage slope4V/µS
(ON)
Turn OFF voltage
(off)
slope
4V/µS
6/26Doc ID022576 Rev 3
VNI4140K-32Electrical characteristics
Figure 3.Switching parameter conventions
6OUT
6IN
D6D4nT
D6/.
T
T
D
/.
T
RISE
D
D6/&&
/&&
FALL
TFTR
T
6OUT
TD/.
TD/&&
T
T
Doc ID022576 Rev 37/26
Electrical characteristicsVNI4140K-32
Table 7.Logical input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(HYST)
I
Table 8.Protection and diagnostic
Input low level voltage0.8V
IL
Input high level voltage 2.20V
IH
Input hysteresis
voltage
Input current
IN
V
= 15 V10
IN
= 36 V210
V
IN
0.15V
SymbolParameterTest conditionsMin.Typ.Max.Unit
v
STAT
V
USD
V
USDHYS
I
LIM
I
PEAK
I
LSTAT
T
TSD
Status voltage
output low
I
= 1.6 mA 0.6V
STAT
Undervoltage
protection
Undervoltage
hysteresis
DC short-circuit
current
Maximum DC output
current
V
= 24 V; R
CC
Dynamic load1.6A
Status leakage current VCC = V
Junction shutdown
temperature
710.5V
0.40.5V
< 10 mΩ1.012.6A
LOAD
= 36 V 30µΑ
STAT
150170190°C
µΑ
T
T
HIST
T
CSD
T
T
CHYST
V
demag
Junction reset
R
temperature
Junction thermal
hysteresis
Case shutdown
temperature
Case reset
CR
temperature
Case thermal
hysteresis
Output voltage at
turn-OFF
I
OUT
= 0.5 A; L
LOAD
8/26Doc ID022576 Rev 3
>= 1 mH
135°C
715°C
125130135°C
110°C
715°C
-41VCC-45VCC-
V
CC
52
V
VNI4140K-32Electrical characteristics
Figure 4.Current and voltage conventions
Doc ID022576 Rev 39/26
Truth tableVNI4140K-32
5 Truth table
Table 9 .Truth ta b l e
ConditionsINPUTnOUTPUTnSTATUSn
Normal operation
Overtemperature
Undervoltage
Shorted load
(Current limitation before thermal shutdown)
L
H
L
H
L
H
L
H
L
H
L
L
L
L
L
X
H
H
H
L
X
X
H
H
10/26Doc ID022576 Rev 3
VNI4140K-32Thermal management
6 Thermal management
The power dissipation in the IC is the main factor that sets the safe operating condition of
the device in the application. Therefore, it must be very carefully considered. Furthermore,
the available space on the PCB should be chosen considering the power dissipation.
Heatsinking can be achieved using copper on the PCB with proper area and thickness. Two
different protections have been implemented to guarantee safety of the device if it overheats
due to an overloaded condition or high environment temperature. The following flowchart
explains in detail this protection functionality.
Figure 5.Thermal behavior
Vi n( i ) = H
OUT(i) On
STAT(i) Off (H)
NO
Tj ( i ) > Tt s d
YES
4)
Tc > Tc r
1)
STAT(i) On (L)
YES
OUT(i) Off
Tc > Tc s d
NO
NOYES
2)
NO
Tj(i) > Tjr
3)
Doc ID022576 Rev 311/26
YES
Switching waveformsVNI4140K-32
7 Switching waveforms
Figure 6.Switching waveforms
12/26Doc ID022576 Rev 3
VNI4140K-32Pin functions
8 Pin functions
Figure 7.Input circuit
Figure 8.Status circuit
Doc ID022576 Rev 313/26
Pin functionsVNI4140K-32
Figure 9.Charge pump switching frequency (typical) vs. temperature
Freq_CP
2000
1800
1600
1400
1200
CP_frequency (KHz)
1000
800
-50050100150200
temperature("C)
Freq_CP
14/26Doc ID022576 Rev 3
VNI4140K-32Package and PCB thermal data
9 Package and PCB thermal data
9.1 VNI4140K-32 thermal data
Figure 10. VNI4140K-32 PCB
Note:Layout condition of R
FR4 area = 77 mm x 86 mm, PCB thickness=1.6 mm, Cu thickness = 70 mm (front and back
side), Copper areas: from minimum pad layout to 8 cm
Figure 11. R
vs. PCB copper area in open box free air condition (one channel ON)
thJA
and Zth measurements (PCB: Double layer, Thermal Vias,
th
2
).
Doc ID022576 Rev 315/26
Package and PCB thermal dataVNI4140K-32
Figure 12. VNI4140K-32 thermal impedance junction ambient single pulse
(one channel ON)
16/26Doc ID022576 Rev 3
VNI4140K-32Reverse polarity protection
10 Reverse polarity protection
This schematic can be used with any type of load.
The following is an indication on how to dimension the R
R
= (-VCC) / (-I
GND
where -I
maximum rating section of the device datasheet.
Power dissipation in R
PD = (-V
Note:In normal conditions (no reverse polarity) due to the diode there is a voltage drop between
GND of the device and GND of the system.
Figure 13. Reverse polarity protection
is the DC reverse ground pin current and can be found in the absolute
GND
)2/R
CC
GND
GND
)
(when VCC < 0: during reverse polarity situations) is:
GND
+ Vcc
+ Vcc
Input
Input
i
i
Output
Output
Status
Status
i
i
GND
GND
GND
resistor.
i
i
Load
Load
R
R
GND
GND
Doc ID022576 Rev 317/26
Diode
Diode
Package mechanical dataVNI4140K-32
11 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
Note:According to the electronic industries association (EIA) standard 481 rev. A, Feb 1986.
22/26Doc ID022576 Rev 3
VNI4140K-32Package mechanical data
Figure 18. VNI4140K-32 suggested footprint
n
2
3OLDER-ASK/PENING
Note:STMicroelectronics is not responsible for any PCB related issues. The footprint shown in the
above figure is a suggestion which might not be in line to the customer PCB supplier design
rules.
All dimensions are in mm.
Doc ID022576 Rev 323/26
Ordering informationVNI4140K-32
12 Ordering information
Table 14.Ordering information
Order codesPackagePackaging
VNI4140K-32PowerSSO-24Tube
VNI4140KTR-32PowerSSO-24Tape and reel
24/26Doc ID022576 Rev 3
VNI4140K-32Revision history
13 Revision history
Table 15.Document revision history
DateRevisionChanges
12-Dec-20111Initial release.
06-Feb-20122
07-Mar-20123
Updated I
minimum value in Table 8: Protection and
lim
diagnostic.
Inserted new feature: ESD according to IEC 61000-4-2 up
to +/-25 KV, in cover page.
Suggested footprint inserted.
In Table 5. parameter I
has been added.
LGND
Doc ID022576 Rev 325/26
VNI4140K-32
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