ST VNH7013XP-E User Manual

VNH7013XP-E

Automotive integrated H-bridge

Features

Type	RDS(on)	Iout	Vccmax
VNH7013XP-E	13 mΩ typ	40 A	72 V(1)
	(per leg)

1.Per leg: sum of the two BVdss (HSD + LSD); VCC > 36 V whole bridge must be switched off;

	■	Maximum VCC voltage: 72 V	PowerSSO-36 TP
	■	10 V compatible inputs

■RDS(on) per leg: 13 mΩ typical

■Embedded thermal sensor: -8.1 mV/°K

■Very low stray inductance in power line

Description

The VNH7013XP-E is an automotive integrated H-bridge intended for a wide range of automotive applications driving DC motors. The device incorporates a dual channel and two single channel MOSFETs. All the devices are designed using STMicroelectronics® well known and proven proprietary VIPower® M0-S7 technology that allows to integrate in a package four different channels in H-bridge topology.

This package, specifically designed for the harsh automotive environment offers improved thermal performance thanks to exposed die pads.

Moreover, its fully symmetrical mechanical design allows superior manufacturability at board level.

Table 1.	Device summary
	Package		Order codes
		Tube		Tape and reel
	PowerSSO-36 TP	VNH7013XP-E		VNH7013XPTR-E
January 2012		Doc ID 022370 Rev 3	1/24
				www.st.com

Contents	VNH7013XP-E

Contents

1	Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 5
2	Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		7
	2.1	Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	8
3	Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		15
	3.1	PowerSSO-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	15

3.1.1Thermal calculation in clockwise and anti-clockwise operation in steady-

state mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

3.1.2Thermal resistances definition (values according to the PCB heatsink

area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1.3 Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1.4Single pulse thermal impedance definition (values according to the PCB

heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4	Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			20
	4.1	ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		20
	4.2	PowerSSO-36	TP package information . . . . . . . . . . . . . . . . . . . . . . . . . .	20
	4.3	PowerSSO-36	TP packing information . . . . . . . . . . . . . . . . . . . . . . . . . . .	22
5	Revision history .		. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	23

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VNH7013XP-E	List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 3. Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4. Power off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 5. Power on. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 7. Gate resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 9. Switching on HSD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 10. Switching on LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 11. Switching off HSD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 12. Switching off LSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 13. Thermal sensor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 14. Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 16 Table 15. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 16. PowerSSO-36 TP mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 17. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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List of figures	VNH7013XP-E

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. Single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 4. Gate charge vs gate-source voltage HS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5. Gate charge vs gate-source voltage LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 6. Capacitance variations HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 7. Capacitance variations LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 8. Thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 9. Gate charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 10. Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13 Figure 11. Switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 12. PowerSSO-36 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 13. Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . 16 Figure 15. PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18

Figure 16. PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18 Figure 17. Thermal fitting model of an H-bridge in PowerSSO-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 18. PowerSSO-36 TP package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 19. PowerSSO-36 TP tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 20. PowerSSO-36 TP tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

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VNH7013XP-E	Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

Figure 2. Configuration diagram

	Gate 4
	Drain4
	Source4	M4	M3
	Source4
	Source4	Drain	Drain

	Source4
	Source4
	Drain4
	Source4
	TSA+
	Source2
	Source2
	Drain2
	Source2
		Drain M1,M2
	Source2
	Source2
	Source2
	Gate 2

Gate 3

Drain3

Source3

Source3

Source3

Source3

Source3

Drain3

Source3

TSAK-

Source1

Source1

Drain1

Source1

Source1

Source1

Source1

Gate 1

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Block diagram and pin description					VNH7013XP-E
	Table 2.		Pin definitions and functions
	Pin number			Symbol	Function
	1			Gate 4	Gate of the LSD 4
	2,	8		Drain 4	Drain of the LSD 4
	3, 4, 5, 6, 7, 9			Source 4	Source of the LSD 4
	10			TSA+	Thermal sensor anode
	11, 12, 14, 15,			Source 2	Source of the HSD 2
	16,	17
	13			Drain 2	Drain of the HSD 2
	18			Gate 2	Gate of the HSD 2
	19			Gate 1	Gate of the HSD 1
	20, 21, 22, 23,			Source 1	Source of the HSD 1
	25,	26
	24			Drain 1	Drain of the HSD 1
	27			TSK-	Thermal sensor cathode
	28, 30, 31, 32,			Source 3	Source of the LSD 3
	33,	34
	29,	35		Drain 3	Drain of the LSD 3
	36			Gate 3	Gate of the LSD 3

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VNH7013XP-E	Electrical specifications

2 Electrical specifications

2.1Absolute maximum rating

Table 3.	Absolute maximum rating
Symbol		Parameter	Value	Unit
VCC		Supply voltage (whole bridge switched off)	72	V
Imax		Maximum output current (continuous)	40	A
VGS_max		Maximum gate source voltage	18	V
IPulse_max		Maximum Single Pulse output current	80(1)	A
Tj		Junction operating temperature	175	°C
Tc		Case operating temperature	-40 to 150	°C
TSTG		Storage temperature	-55 to 150	°C
IS		Diode continuous forward current	40	A

1. Pulse duration = 20 ms (seeFigure 3).

Figure 3. Single pulse maximum current

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Electrical specifications	VNH7013XP-E

2.2Electrical characteristics

Tj = 25 °C, unless otherwise specified.

Table 4.		Power off
Symbol		Parameter		Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS		Drain-source breakdown	ID = 10 mA, VGS = 0 V		36	—		V
		voltage
		Zero gate voltage drain	VDS = 28 V;			—	100	µA
IDSS			-40 °C < Tj < 150 °C
		current (VGS=0V)
			VDS = 28 V; Tj = 25 °C			—	10	µA
I	GSS	Gate-source leakage current	V	= ±10 V		—	±100	nA
		(VDS=0V)	GS

Table 5.

Power on

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate threshold voltage

VDS = VGS; ID = 1 mA

2

4

V

dV

/dT

Gate threshold voltage

V

DS

= V

; I

D

= 1 mA

7.5

mV/°C

GS(th)

temperature derating

GS

R

HS

Static drain-source on

VGS = 10 V; ID = 5 A; Tj =

25 °C

5.7

mΩ

DS(on)

resistance

VGS = 10

V; ID = 5 A; Tj =

150 °C

11.9

mΩ

R

LS

Static drain-source on

VGS = 10

V; ID = 5 A; Tj =

25 °C

7.3

mΩ

DS(on)

resistance

VGS = 10

V; ID = 5 A; Tj =

150 °C

15.1

mΩ

	Table 6.		Dynamic
	Symbol		Parameter	Test condition	Min.	Typ.	Max.	Unit
	G	(1)	Forward transconductance	VDS = 15 V; ID = 20 A;	—	20	—	S
		fs_HS
	Gfs_LS(1)		Forward transconductance	Tj = 25 °C	—	17.5	—	S
	Ciss_HS		Input capacitance	VDS = 25 V; f = 1 MHz;	—	1836	—	pF
	Coss_HS		Output capacitance		—	426	—	pF
				VGS = 0 V (see Figure 6)
	Crss_HS		Reverse transfer capacitance		—	55	—	pF
	Ciss_LS		Input capacitance	VDS = 25 V; f = 1 MHz;	—	1250	—	pF
	Coss_LS		Output capacitance		—	311	—	pF
				VGS = 0 V (see Figure 7)
	Crss_LS		Reverse transfer capacitance		—	49	—	pF

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

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