The VHN5019A-E is a full bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic high-side drivers and two low-side
switches. The high-side driver switch is designed
using STMicroelectronics’ well known and proven
proprietary VIPower
to efficiently integrate on the same die a true
®
M0 technology that allows
VNH5019A-E
Automotive fully integrated
H-bridge motor driver
V
ccmax
MultiPowerSO-30™
Power MOSFET with an intelligent
signal/protection circuit.
The three dice are assembled in
MultiPowerSO-30 package on electrically isolated
lead-frames. This package, specifically designed
for the harsh automotive environment offers
improved thermal performance thanks to exposed
die pads. The input signals IN
directly interface to the microcontroller to select
the motor direction and the brake condition.
The DIAG
/ENA or DIAGB/ENB, when connected
A
to an external pull-up resistor, enable one leg of
the bridge. They also provide a feedback digital
diagnostic signal. The CS pin allows to monitor
the motor current by delivering a current
proportional to its value when CS_DIS pin is
driven low or left open. The PWM, up to 20 KHz,
lets us to control the speed of the motor in all
possible conditions. In all cases, a low-level state
on the PWM pin turns-off both the LS
switches. When PWM rises to a high-level, LS
LS
turn-on again depending on the input pin
B
state.
Output current limitation and thermal shutdown
protects the concerned high-side in short to
ground condition.
The short to battery condition is revealed by the
overload detector or by thermal shutdown that
latches off the relevant low-side.
Active V
pin voltage clamp protects the device
CC
against low energy spikes in all configurations for
the motor.
CP pin provides the necessary gate drive for an
external n-channel PowerMOS used for reverse
polarity protection.
Table 1.Suggested connections for unused and not connected pins
1516
Connection / pinCurrent senseN.C.OUTx
OUT
A
N.C.
GND
A
GND
A
GND
A
OUT
A
N.C.
V
CC
N.C.
OUT
B
GND
B
GND
B
GND
B
N.C.
OUT
B
INPUTx, PWM
DIAGx/ENx
CS_DIS
FloatingNot allowedXXX
To groundThrough 1 kΩ resistorXNot allowed
Table 2.Pin definitions and functions
Through 10 kΩ
resistor
PinSymbolFunction
1, 25, 30
2,14,17, 22,
24,29
3, 13, 23
12V
OUTA,
Heat Slug2
N.C.Not connected
,
V
CC
Heat Slug1
BAT
Source of high-side switch A / drain of low-side switch A, power
connection to the motor
Drain of high-side switches and connection to the drain of the
external PowerMOS used for the reverse battery protection
Battery connection and connection to the source of the external
PowerMOS used for the reverse battery protection
Status of high-side and low-side switches A; open drain output.
This pin must be connected to an external pull-up resistor. When
externally pulled low, it disables half-bridge A. In case of fault
5EN
/DIAG
A
detection (thermal shutdown of a high-side FET or excessive
A
ON-state voltage drop across a low-side FET), this pin is pulled
low by the device (see
(detected on OUTA)
Table 13: Truth table in fault conditions
)
6/37 Doc ID 15701 Rev 8
VNH5019A-EBlock diagram and pin description
Table 2.Pin definitions and functions (continued)
PinSymbolFunction
6CS_DIS
4IN
A
Active high CMOS compatible pin to disable the current sense
pin
Clockwise input. CMOS compatible
7PWMPWM input. CMOS compatible.
Output of current sense. This output delivers a current
8CS
proportional to the motor current, if CS_DIS is low or left open.
The information can be read back as an analog voltage across
an external resistor.
Status of high-side and low-side switches B; Open drain output.
This pin must be connected to an external pull up resistor. When
externally pulled low, it disables half-bridge B. In case of fault
9EN
/DIAG
B
detection (thermal shutdown of a high-side FET or excessive
B
ON-state voltage drop across a low-side FET), this pin is pulled
low by the device (see
(detected on OUTA)
10IN
B
11CP
OUT
15, 16, 21
26, 27, 28GND
18, 19, 20GND
1. GNDA and GNDB must be externally connected together
B,
Heat Slug3
A
B
Counter clockwise input. CMOS compatible
Connection to the gate of the external MOS used for the reverse
battery protection
Source of high-side switch B / drain of low-side switch B, power
connection to the motor
Source of low-side switch A and power ground
Source of low-side switch B and power ground
Table 13: Truth table in fault conditions
.
(1)
(1)
)
Table 3.Block descriptions
(1)
NameDescription
Logic control
Overvoltage + undervoltage
High-side, low-side and clamp
voltage
High-side and low-side driver
Linear current limiter
High-side and low-side
overtemperature protection
Low-side overload detector
Allows the turn-on and the turn-off of the high-side and the
low-side switches according to the
Ta bl e 12
.
Shut down the device outside the range [4.5 V to 24 V] for the
battery voltage.
Protect the high-side and the low-side switches from the
high-voltage on the battery line in all configuration for the motor.
Drive the gate of the concerned switch to allow a proper R
DS(on)
for the leg of the bridge.
Limits the motor current, by reducing the high-side switch
gate-source voltage when short-circuit to ground occurs.
In case of short-circuit with the increase of the junction’s
temperature, it shuts down the concerned driver to prevent its
degradation and to protect the die.
Detects when low-side current exceeds shutdown current and
latches off the concerned low-side.
Doc ID 15701 Rev 87/37
Block diagram and pin descriptionVNH5019A-E
Table 3.Block descriptions
NameDescription
Charge pump
Fault detection
Power limitation
1. See
Figure 1
(1)
(continued)
Provides the voltage necessary to drive the gate of the external
PowerMOS used for the reverse polarity protection
Signalizes an abnormal condition of the switch (output
shorted to ground or output shorted to battery) by pulling
down the concerned ENx/DIAGx pin.
Limits the power dissipation of the high-side driver inside
safe range in case of short to ground condition.
8/37 Doc ID 15701 Rev 8
VNH5019A-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
CP
V
CP
I
INA
I
V
INA
V
INB
INB
I
ENA
IN
IN
CP
A
B
DIAGA/EN
I
ENB
V
ENA
V
ENB
DIAGB/EN
PWM
I
pw
V
pw
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 4.Absolute maximum rating
I
BAT
I
S
BAT
GND
V
CC
CS_DIS
GND
A
OUT
OUT
CS
I
A
B
I
SENSE
I
CSD
V
B
CSD
I
OUTB
V
SENSE
OUTA
V
OUTB
V
OUTA
V
A
B
V
BAT
V
CC
GND
I
GND
SymbolParameterValueUnit
V
V
I
max
I
I
I
I
CS_DIS
Maximum battery voltage
BAT
Maximum bridge supply voltage+ 41V
CC
Maximum output current (continuous)30A
I
Reverse output current (continuous)-30A
R
I
Input current (INA and INB pins)+/- 10mA
IN
Enable input current (DIAGA/ENA and DIAGB/ENB pins)+/- 10mA
EN
PWM input current +/- 10mA
pw
CP output current+/- 10mA
CP
CS_DIS input current+/- 10mA
(1)
-16
+41
V
V
Doc ID 15701 Rev 89/37
Electrical specificationsVNH5019A-E
Table 4.Absolute maximum rating (continued)
SymbolParameterValueUnit
V
- 41
V
V
T
1. This applies with the n-channel MOSFET used for the reverse battery protection. Otherwise V
shorted to VCC.
Current sense maximum voltage
CS
Electrostatic discharge (human body model: R = 1.5 kΩ,
ESD
C = 100 pF)
Case operating temperature-40 to 150°C
T
c
Storage temperature-55 to 150 °C
STG
CC
+V
CC
2kV
has to be
BAT
V
V
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case HSD1.7°C/W
Thermal resistance junction-case LSD3.2°C/W
Thermal resistance junction-ambientSee
Figure 18
°C/W
10/37 Doc ID 15701 Rev 8
VNH5019A-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 21 V, -40 °C < Tj < 150 °C, unless
CC
otherwise specified.
Table 6.Power section
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
CC
I
S
R
ONHS
R
ONLS
V
f
I
L(off)
Operating bridge supply
voltage
Supply current
Static high-side
resistance
Static low-side
resistance
High-side
free-wheeling diode
forward voltage
High-side OFF-state
output current (per
channel)
5.524V
OFF-state with all fault cleared and ENx = 0 V
(standby):
= INB = PWM = 0; Tj = 25 °C; VCC = 13 V
IN
A
IN
= INB = PWM = 0
A
1015
OFF-state (no standby):
INA = INB = PWM = 0; ENx = 5 V