The VNH3ASP30-E is a full-bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic high-side driver (HSD) and two lowside switches. The HSD switch is designed using
STMicroelectronics proprietary VIPower™ M0
technology that efficiently integrates a true Power
MOSFET with an intelligent signal/protection
circuit on the same die.
MultiPowerSO-30™
The low-side switches are vertical MOSFETs
manufactured using STMicroelectronics
proprietary EHD (“STripFET™”) process.The
three circuits are assembled in a MultiPowerSO30 package on electrically isolated lead frames.
This package, specifically designed for the harsh
automotive environment, offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
provides superior manufacturability at board level.
The input signals IN
and INB can directly
A
interface with the microcontroller to select the
motor direction and the brake condition. Pins
DIAG
/ENA or DIAGB/ENB, when connected to an
A
external pull-up resistor, enable one leg of the
bridge. They also provide a feedback digital
diagnostic signal. The normal condition operation
is explained in Table 12: Truth table in normal
operating conditions on page 14. The CS pin
monitors the motor current by delivering a current
proportional to its value. The speed of the motor
can be controlled in all possible conditions by the
PWM up to 20 kHz. In all cases, a low level state
on the PWM pin will turn off both the LS
switches. When PWM rises to a high level, LS
LS
Allows the turn-on and the turn-off of the high-side and the low-side switches
according to the truth table
1/K
DIAGA/EN
OV + U
V
LOGIC
IN
CSDIAGB/EN
A
PWM
A
OVERTEMPERATURE B
1/K
IN
B
B
CLAMP HS
DRIVER
HS
B
CURRENT
LIMITATION B
CLAMP LS
DRIVER
LS
B
B
B
GND
HS
B
OUT
B
LS
B
B
Overvoltage +
undervoltage
High-side and lowside clamp voltage
High-side and lowside driver
Linear current limiter
Overtemperature
protection
Fault detection
Shuts down the device outside the range [5.5V..16V] for the battery voltage
Protect the high-side and the low-side switches from the high voltage on the
battery line in all configurations for the motor
Drives the gate of the concerned switch to allow a good R
for the leg of
DS(on)
the bridge
Limits the motor current by reducing the high-side switch gate source voltage
when short-circuit to ground occurs
In case of short-circuit with the increase of the junction’s temperature, shuts
down the concerned high side to prevent its degradation and to protect the die
Signals an abnormal behavior of the switches in the half-bridge A or B by
pulling low the concerned EN
/DIAGx pin
x
5/33
Block diagram and pin descriptionVNH3ASP30-E
Figure 2.Configuration diagram (top view)
OUT
V
IN
ENA/DIAG
PWM
A
Nc
CC
Nc
A
A
Nc
1
OUT
Heat Slug3
V
CC
Heat Slug1
CS
EN
/DIAG
B
B
IN
B
Nc
V
CC
OUT
Heat Slug2
Nc
OUT
Table 3.Pin definitions and functions
1516
B
Pin No.SymbolFunction
1, 25, 30OUT
2, 4, 7, 12, 14,
17, 22, 24, 29
, Heat Slug3 Source of high-side switch A / Drain of low-side switch A
A
NCNot connected
30
OUT
A
A
Nc
GND
GND
GND
OUT
A
A
A
A
Nc
V
CC
Nc
OUT
B
GND
B
B
GND
GND
B
B
Nc
OUT
B
3, 13, 23VCC, Heat Slug1Drain of high-side switches and power supply voltage
5IN
6EN
A
A
/DIAG
A
Clockwise input
Status of high-side and low-side switches A; open drain output
8PWMPWM input
9CS Output of current sense
10EN
11IN
15, 16, 21OUT
26, 27, 28GND
18, 19, 20GND
/DIAG
B
B
B
, Heat Slug2 Source of high-side switch B / Drain of low-side switch B
B
A
B
1. GNDA and GNDB must be externally connected together.
Status of high-side and low-side switches B; open drain output
Counter clockwise input
Source of low-side switch A
Source of low-side switch B
(1)
(1)
6/33
VNH3ASP30-EBlock diagram and pin description
Table 4.Pin functions description
NameDescription
V
CC
, GNDBPower grounds; must always be externally connected together
GND
A
OUTBPower connections to the motor
OUT
A,
Battery connection
Voltage controlled input pins with hysteresis, CMOS compatible: These two pins
IN
A, INB
control the state of the bridge in normal operation according to the truth table (brake
to VCC, brake to GND, clockwise and counterclockwise).
Voltage controlled input pin with hysteresis, CMOS compatible: Gates of low-side
PWM
FETs are modulated by the PWM signal during their ON phase allowing speed
control of the motor.
Open drain bidirectional logic pins. These pins must be connected to an external pull
ENA/DIAGA,
ENB/DIAG
up resistor. When externally pulled low, they disable half-bridge A or B. In case of
fault detection (thermal shutdown of a high-side FET or excessive ON state voltage
B
drop across a low-side FET), these pins are pulled low by the device (see truth table
in fault condition).
Analog current-sense output. This output sources a current proportional to the motor
CS
current. The information can be read back as an analog voltage across an external
resistor.
7/33
Electrical specificationsVNH3ASP30-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
INA
I
INB
I
ENA
I
ENB
V
INA
V
INB
V
ENA
V
ENB
IN
A
IN
B
DIAGA/EN
DIAGB/EN
PWM
I
pw
V
pw
V
CC
OUT
A
OUT
B
A
B
GND
CS
GND
A
B
V
SENSE
I
SENSE
I
V
OUTB
OUTB
I
OUTA
V
OUTA
GND
I
GND
CC
2.1 Absolute maximum ratings
Table 5.Absolute maximum ratings
SymbolParameterValueUnit
Supply voltage+41V
CC
Maximum output current (continuous)30
Reverse output current (continuous)-30
I
R
Input current (INA and INB pins)±10
I
IN
Enable input current (DIAGA/ENA and DIAGB/ENB pins)±10
EN
PWM input current ±10
PW
Current-sense maximum voltage-3/+15V
CS
Electrostatic discharge (R = 1.5kΩ, C = 100pF)
–CS pin
ESD
– logic pins
– output pins: OUT
Junction operating temperatureInternally limited
T
J
Case operating temperature-40 to 150
C
Storage temperature-55 to 150
stg
, OUTB, V
A
CC
V
V
I
max
I
V
T
A
mAI
2
4
5
kV
kV
kV
°CT
8/33
VNH3ASP30-EElectrical specifications
2.2 Electrical characteristics
VCC = 9V up to 16 V; -40°C < TJ < 150°C, unless otherwise specified.
Table 6.Power section
SymbolParameterTest conditionsMin Typ Max Unit
V
Operating supply
CC
voltage
Off state:
= INB = PWM = 0; TJ = 25°C; VCC = 13V
IN
A
= INB = PWM = 0;
I
S
Supply current
IN
A
On state:
or INB = 5V, no PWM10mA
IN
A
= 12A; TJ = 25°C
R
ONHS
R
ONLS
Static high-side
resistance
Static low-side
resistance
I
OUT
= 12A; TJ = -40 to 150°C
I
OUT
= 12A TJ = 25°C
I
OUT
= 12A; TJ = -40 to 150°C
I
OUT
High-side
V
freewheeling diode
f
= 12A0.81.1V
I
f
forward voltage
I
L(off)
I
RM
High-side off-state
output current
(per channel)
Dynamic crossconduction current
TJ = 25°C; V
= 125°C; V
T
J
= 12A (see Figure 7)1.7A
I
OUT
=ENX=0V; VCC=13V3
OUTX
=ENX=0V; VCC= 13V5
OUTX
Table 7.Logic inputs (INA, INB, ENA, ENB)
5.516 V
12 30 60µA
µA
30
mΩ
60
12
mΩ
24
µA
SymbolParameterTest conditionsMin Typ Max Unit
V
V
V
I
I
V
Input low-level voltage
V
IL
Input high-level voltage3.25
IH
Input hysteresis voltage0.5
Ihys
Input clamp voltage
ICL
Input low currentVIN = 1.25 V1
INL
Input high currentVIN = 3.25V10
INH
Enable output low-level
DIAG
voltage
Normal operation (DIAG
/ENX pin acts
X
as an input pin)
I
= 1mA5.5 6.3 7.5
IN
I
= -1mA-1.0 -0.7 -0.3
IN
Fault operation (DIAGX/ENX pin acts as
an output pin); IEN = 1mA
1.25
V
µA
0.4V
9/33
Electrical specificationsVNH3ASP30-E
Table 8.PWM
SymbolParameterTest conditionsMinTypMaxUnit
V
I
PWL
V
PWH
I
PWH
V
PWhys
V
PWCL
C
INPW
Table 9.Switching (VCC=13V, R
PWM low-level voltage1.25 V
PWL
PWM low-level pin
current
V
= 1.25 V1µA
pw
PWM high-level voltage3.25V
PWM high-level pin
current
V
= 3.25V10µA
pw
PWM hysteresis voltage0.5
I
= 1mAVCC+0.3 VCC+0.7 VCC+1.0
PWM clamp voltage
PWM pin input
capacitance
pw
= -1mA-6.0 -4.5-3.0
I
pw
= 2.5V25pF
V
IN
= 1 Ω )
LOAD
SymbolParameterTest conditionsMinTypMaxUnit
f
t
d(on)
t
d(off)
t
DEL
PWM frequency020kHz
PW
Turn-on delay time
Turn-off delay time
t
Rise time(see Figure 5)11.6
r
Fall time(see Figure 5)12.4
t
f
Delay time during change
of operating mode
Input rise time < 1µs
(see Figure 6)
Input rise time < 1µs
(see Figure 6)
250
250
(see Figure 4)3006001800
High-side freewheeling
diode reverse recovery
t
rr
(see Figure 7)110ns
time
Table 10.Protection and diagnostic
V
µs
SymbolParameterTest conditionsMin Typ Max Unit
V
UV(sd)
UV(reset)
V
OV(sd)
I
LIM
V
CLP
T
th(sd)
h(reset)
T
th(hys)
Undervoltage shutdown5.5
Undervoltage reset4.7
Overvoltage shutdown16 19 22
High-side current limitation3050 70A
Total clamp voltage (VCC to GND)I
Thermal shutdown temperatureV
Thermal reset temperature135
Thermal hysteresis715
10/33
= 12A434854V
OUT
= 3.25V150 175 200
IN
VV
°CT
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