The VND830SP is a monolithic device designed
in| STMicroelectronics™ VIPower™ M0-3
Technology. The VND830SP is intended for
driving any type of multiple load with one side
connected to ground.
The active V
device against low energy spikes (see ISO7637
transient compatibility table). Active current
limitation combined with thermal shutdown and
automatic restart protects the device against
overload.
The device detects the open-load condition in
both the on-state and off-state. In the off-state the
device detects if the output is shorted to V
device automatically turns off in the case where
the ground pin becomes disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To groundX
Through 10KΩ
resistor
Doc ID 7380 Rev 45/27
Electrical specificationsVND830SP
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
I
-I
I
STAT
V
E
P
T
CC
CC
GND
OUT
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC Status current+/- 10mA
Electrostatic discharge (human body model: R = 1.5 KΩ;
C=100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected
to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead 1.7°C/W
Thermal resistance junction-ambient51.7
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC<36V; -40°C<Tj< 150 °C, unless
otherwise stated.
Figure 3.Current and voltage conventions
I
IN1
I
IN2
I
I
V
STAT2
STAT1
IN2
STAT2
V
IN1
V
STAT1
V
INPUT 1
STATUS 1
INPUT 2
STATUS 2
GND
V
CC
OUTPUT 1
OUTPUT 2
I
GND
(1)
I
V
F1
OUT2
(*)
V
I
OUT1
V
OUT2
(2)
37
OUT1
°C/W
I
S
V
CC
Note:V
Fn
= V
CCn
- V
during reverse battery condition.
OUTn
Doc ID 7380 Rev 47/27
Electrical specificationsVND830SP
Table 5.Power output
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
R
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Table 6.Protections
Operating supply
CC
voltage
Undervoltage shutdown345.5V
USD
Overvoltage shutdown36V
OV
On-state resistance
ON
I
Supply current
S
Off-state output current VIN=V
Off-state output current VIN=0V; V
Off-state output current
Off-state output current
5.51336V
I
=2A; Tj=25°C60mΩ
OUT
=2A; V
I
OUT
Off-state; VCC=13V;
VIN=V
OUT
Off-state; V
V
IN=VOUT
On-state; V
I
=0A
OUT
OUT
V
IN=VOUT
> 8 V120mΩ
CC
=0V
=13V;
CC
=0V; Tj=25°C
=13V; VIN=5V;
CC
1240µA
1225µA
57mA
=0V 050µA
=3.5V -750µA
OUT
=0V; VCC=13V;
Tj=125°C
V
IN=VOUT
=25°C
T
j
=0V; VCC=13V;
5µA
3µA
SymbolParameterTest conditionsMin.Typ. Max.Unit
T
T
t
SDL
I
V
demag
Shutdown temperature150175200°C
TSD
Reset temperature135°C
T
R
Thermal hysteresis715°C
hyst
Status delay in overload
conditions
Current limitation
lim
Turn-off output clamp voltageI
> T
T
j
TSD
V
=13V6915A
CC
5.5 V < V
OUT
< 36 V15A
CC
-41V
V
=2A; L=6mH
CC
CC
-48V
20µs
-
CC
55
V
Note:To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
Forward on voltage-I
F
= 1.3 A; Tj=150°C——0.6V
OUT
8/27Doc ID 7380 Rev 4
VND830SPElectrical specifications
Table 8.Switching (V
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
Turn-off delay time
= 13V; Tj = 25°C)
CC
RL=6.5Ω from VIN rising
edge to V
(see Figure 5)
RL=6.5Ω from VIN falling
edge to V
(see Figure 5)
OUT
OUT
=1.3V
=11.7V
—30—µs
—30—µs
dV
/dt
OUT
dV
OUT
Table 9.Logic inputs
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
RL=6.5Ω from V
to V
OUT
=10.4V
(see Figure 5)
R
=6.5Ω from V
L
to V
= 1.3 V (see Figure 5)
OUT
OUT
OUT
=1.3V
= 11.7 V
—
—
See
Figure 19
See
Figure 21
—V/µs
—V/µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
Table 10.Status pin
Input low level1.25V
IL
Low level input currentVIN=1.25V1µA
IL
Input high level3.25V
IH
High level input currentVIN= 3.25 V10µA
IH
Input hysteresis voltage0.5V
I
=1mA66.88V
Input clamp voltage
ICL
IN
=-1mA-0.7V
I
IN
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
V
Table 11.Open-load detection
Status low output voltageI
Status leakage current
Status pin Input capacitance
Status clamp voltage
SCL
=1.6mA0.5V
STAT
Normal operation;
=5V
V
STAT
Normal operation;
V
=5V
STAT
I
=1mA66.88V
STAT
I
=- 1mA-0.7V
STAT
10µA
100pF
SymbolParameterTest conditionsMin. Typ. Max. Unit
t
DOL(on)
t
DOL(off)
I
V
Open-load on-state detection threshold VIN= 5 V 50100200mA
OL
Open-load on-state detection delayI
Open-load off-state voltage detection
OL
threshold
=0A 200µs
OUT
=0V1.52.53.5V
V
IN
Open-load detection delay at turn-off1000µs
Doc ID 7380 Rev 49/27
Electrical specificationsVND830SP
Figure 4.Status timings
OPEN LOAD STATUS TIMING (with external pull-up)
V
> V
OUT
V
INn
V
STATn
t
DOL(off)
I
OUT
OL
t
DOL(on)
Figure 5.Switching characteristics
< I
OVER TEMP STATUS TIMING
OL
V
INn
V
STATn
t
SDL
Tj > T
TSD
t
SDL
10/27Doc ID 7380 Rev 4
VND830SPElectrical specifications
Table 12.Truth table
ConditionsInputOutputStatus
Normal operation
L
H
L
Current limitation
H
H
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
Table 13.Electrical transient requirements
OL
OL
L
H
L
H
L
H
L
H
L
H
ISO T/R
Test level
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
(T
(T
< T
j
> T
j
H
H
H
H
L
X
X
H
H
L
H
H
L
TSD
TSD
) H
) L
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
Doc ID 7380 Rev 411/27
Electrical specificationsVND830SP
Figure 6.Waveforms
NORMAL OPERATION
INPUT
n
LOAD VOLTAGE
STATUS
V
INPUT
n
CC
n
LOAD VOLTAGE
STATUS
V
CC
INPUT
n
LOAD VOLTAGE
STATUS
n
n
UNDERVOLTAGE
V
USDhyst
V
USD
n
undefined
OVERVOLTAGE
VCC<V
OV
n
V
> V
CC
OV
INPUT
n
LOAD VOLTAGE
STATUS
INPUT
n
n
LOAD VOLTAGE
STATUS
T
INPUT
n
j
n
LOAD CURRENT
STATUS
n
OPEN LOAD with external pull-up
V
> V
n
V
OL
OUT
OL
OPEN LOAD without external pull-up
n
T
TSD
T
R
n
OVERTEMPERATURE
12/27Doc ID 7380 Rev 4
VND830SPElectrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
Figure 11. Overvoltage shutdownFigure 12. Turn-off voltage slope
Off state
Vcc=36V
Vin=Vout=0V
-50 -2502550 75 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -25025 5075 100 125 150 175
Tc (°C)
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -25025 5075 100 125 150 175
Tc (°C)
dVout/dt(on) (V/ms)
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -2502550 75 100 125 150 175
Tc (ºC)
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
Vcc=13V
Rl=6.5Ohm
-50 -2502550 75 100 125 150 175
Tc (ºC)
Doc ID 7380 Rev 413/27
Electrical specificationsVND830SP
Figure 13. I
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
Figure 15. Input high levelFigure 16. Input hysteresis voltage
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
-50 -2502550 75 100 125 150 175
LIM
Vcc=13V
vs T
case
Tc (°C)
Tc ( °C )
Figure 14. On-state resistance vs V
Ron (mOhm)
120
110
100
90
80
70
60
50
40
30
20
10
0
5 10152025303540
Tc=150°C
Tc=25°C
Tc= - 40°C
Iout=5A
Vcc (V)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
CC
Figure 17. On-state resistance vs T
Ron (mOhm)
160
140
120
100
80
60
40
20
0
-50 -250255075 100 125 150 175
Iout=2A
Vcc=8V; 13V & 36V
case
Figure 18. Input low level
Vil (V)
2.6
2.4
2.2
1.8
1.6
1.4
1.2
Tc (°C)
14/27Doc ID 7380 Rev 4
2
1
-50 -250255075 100 125 150 175
Tc (°C)
VND830SPElectrical specifications
Figure 19. Status leakage currentFigure 20. Status low output voltage
Ilstat (uA)
0.05
0.04
Vstat=5V
0.03
0.02
0.01
0
-50 -2502550 75 100 125 150 175
Tc (°C)
Vstat (V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25025 5075 100 125 150 175
Tc (°C)
Figure 21. Status clamp voltageFigure 22. Open-load on-state detection
threshold
Iol (mA)
150
140
130
120
110
100
90
80
70
60
50
Vcc=13V
Vin=5V
-50 -250255075 100 125 150 175
Tc (ºC)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -25025 5075 100 125 150 175
Tc (°C)
Figure 23. Open-load off-state detection
threshold
Vol (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Vin=0V
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 7380 Rev 415/27
Application informationVND830SP
3 Application information
Figure 24. Application schematic
+5V
+5V
+5V
μ
R
prot
C
R
prot
R
prot
R
prot
STATUS1
INPUT1
STATUS2
INPUT2
V
CC
D
ld
OUTPUT1
V
GND
GND
R
GND
D
OUTPUT2
GND
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where - I
≤ 600 mV / 2 (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device datasheet.
GND
resistor:
GND
only)
Power dissipation in R
P
= (-VCC)2/ R
D
GND
GND
(when V
< 0 during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
16/27Doc ID 7380 Rev 4
S(on)max
becomes the sum of the
VND830SPApplication information
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
will produce a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (≈600 mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the microcontroller I/O pins from latching up.
if the device will be driving
GND
) in line to
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
- V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
Recommended values are:
R
prot
= -100 V
≥ 20 mA
≥ 4.5 V
prot
= 10 kΩ
≤ 65 kΩ.
Doc ID 7380 Rev 417/27
Application informationVND830SP
3.4 Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (RPU) connected between
OUTPUT pin and a positive supply voltage (V
microprocessor.
The external resistor has to be selected according to the following requirements:
1.No false open-load indication when load is connected: in this case we have to avoid
V
to be higher than V
OUT
V
= (V
OUT
PU
/ (RL + RPU))RL < V
; this results in the following condition
Olmin
Olmin.
2. No misdetection when load is disconnected: in this case the V
V
Because I
up resistor R
; this results in the following condition R
OLmax
may significantly increase if V
s(OFF)
should be connected to a supply that is switched OFF when the module is in
PU
standby.
Figure 25. Open-load detection in off-state
) like the +5V line used to supply the
PU
has to be higher than
< (V
PU
is pulled high (up to several mA), the pull-
out
V batt.VPU
V
CC
PU
- V
OUT
OLmax
) / I
L(off2)
.
INPUT
STATUS
DRIVER
+
LOGIC
+
-
VOL
GROUND
R
PU
I
L(off2)
OUT
R
RL
18/27Doc ID 7380 Rev 4
VND830SPApplication information
3.5 Maximum demagnetization energy (V
Figure 26. Maximum turn-off current versus load inductance
I
LM AX (A)
100
10
1
0,1110100
L( mH )
= 13.5V)
CC
A
B
C
A = single pulse at T
Jstart
B= repetitive pulse at T
C= repetitive pulse at T
VIN, I
L
Demagnetization
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
= 150ºC
= 100ºC
Jstart
= 125ºC
Jstart
Demagnetization
= 0 Ω.
L
(at beginning of each demagnetization) of every pulse
jstart
Demagnetization
t
Doc ID 7380 Rev 419/27
Package and PCB thermal dataVND830SP
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 27. PowerSO-10 PC board
Note:Layout condition of R
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to
2
8cm
).
Figure 28. R
thj-amb
RTHj_amb (°C/W)
55
50
45
40
35
30
0246810
and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
th
vs PCB copper area in open box free air condition
Tj-Tamb=50°C
PCB Cu heatsink area (cm^2)
20/27Doc ID 7380 Rev 4
VND830SPPackage and PCB thermal data
Figure 29. Thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
Z
where
THδ
RTHδ Z
δtpT⁄=
THtp
1 δ–()+⋅=
Figure 30. Thermal fitting model of a double channel HSD in PowerSO-10
Tj_1
Pd1
Tj_2
C1
C1C2
R1
Pd2
C3C4
R3R1R6R5R2
R2
R4
T_amb
C5C6C2
Doc ID 7380 Rev 421/27
Package and PCB thermal dataVND830SP
Table 14.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.15
R2 (°C/W)0.8
R3 (°C/W)0.7
R4 (°C/W)0.8
R5 (°C/W)12
R6 (°C/W)3722
C1 (W.s/°C)0.0006
C2 (W.s/°C)2.1E-03
C3 (W.s/°C)0.013
C4 (W.s/°C)0.3
C5 (W.s/°C)0.75
C6 (W.s/°C)35
22/27Doc ID 7380 Rev 4
VND830SPPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 package information
Figure 31. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
L
α
Doc ID 7380 Rev 423/27
Package and packing informationVND830SP
Table 15.PowerSO-10 mechanical data
mm.
DIM.
Min.Typ.Max.
A3.353.65
(1)
A
A100.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
α0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
24/27Doc ID 7380 Rev 4
VND830SPPackage and packing information
5.3 PowerSO-10 packing information
Figure 32. PowerSO-10 suggested
pad layout
Figure 33. PowerSO-10 tube shipment
(no suffix)
C
B
A
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
Casablanca50100053210.4 16.4 0.8
Muar5010005324.9 17.2 0.8
Figure 34. PowerSO-10 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
MUARCASABLANCA
A
B
C
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
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