The VND830P-E is a monolithic device made by
using STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects
open-load condition both is on-state and off-state.
Output shorted to V
Device automatically turns-off in case of ground
pin disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To ground-X-
8
9
V
CC
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
V
CC
Through 10 KΩ
resistor
Doc ID 17546 Rev 25/27
VND830P-EElectrical specifications
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Tabl e 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sectionsof this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
I
- I
I
STAT
V
E
P
T
CC
CC
GND
OUT
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC status current+/- 10mA
Electrostatic discharge (Human Body Model: R=1.5 KΩ;
C = 100 pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected to all VCC pins.
Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm
Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead (max)15°C/W
Thermal resistance junction-ambient (max)65
2
of Cu (at least 35 µm thick) connected to all VCC pins.
(1)
48
(2)
°C/W
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
(Per each channel)
Figure 3.Current and voltage conventions
I
IN1
INPUT 1
I
V
IN1
STAT1
STATUS 1
V
STAT1
I
IN2
INPUT 2
I
V
STAT2
IN2
STATUS 2
V
STAT2
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
OUT1
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
I
S
V
CC
1. VFn = V
Table 5.Power output
CCn
- V
during reverse battery condition.
OUTn
SymbolParameterTest conditionsMin.Typ.Max. Unit
(1)
Operating supply voltage5.51336V
(1)
Undervoltage shutdown345.5V
(1)
Overvoltage shutdown36V
I
= 2 A; Tj = 25 °C
On-state resistance
ON
OUT
I
OUT
= 2 A; V
CC
> 8 V
60
120mΩmΩ
V
V
USD
V
R
CC
OV
Doc ID 17546 Rev 27/27
VND830P-EElectrical specifications
Table 5.Power output (continued)
SymbolParameterTest conditionsMin.Typ.Max. Unit
(1)
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.
Table 6.Protections
Supply current
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
(1)
Off-state; V
= V
V
IN
Off-state; V
= V
V
IN
On-state; V
= 5 V; I
V
IN
= V
IN
= 0 V; V
IN
V
= V
IN
= 125 °C
T
j
V
= V
IN
=25 °C
T
j
= 13 V;
CC
= 0 V
OUT
= 13 V;
CC
= 0 V; Tj = 25°C
OUT
= 13 V;
CC
= 0 A
OUT
= 0 V 050µA
OUT
= 3.5 V -750µA
OUT
OUT
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
1240µA
1225µA
57mA
5µA
3µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
T
T
Shutdown temperature150175200°C
TSD
Reset temperature135°C
T
R
Thermal hysteresis715°C
hyst
Status delay in overload
SDL
conditions
T
> T
j
TSD
20µs
V
= 13 V6915A
I
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Tabl e 7.VCC - output diode
Current limitation
lim
Turn-off output clamp
voltage
CC
5.5 V < V
I
OUT
< 36 V15A
CC
= 2 A; L = 6 mHV
-41V
CC
CC
-48 V
-55V
CC
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
Forward on voltage-I
F
Table 8.Status pin
=1.3 A; Tj=150°C--0.6V
OUT
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
Status low output voltageI
= 1.6 mA0.5V
STAT
Status leakage currentNormal operation; V
Status pin input capacitanceNormal operation; V
= 5 V10µA
STAT
= 5 V100pF
STAT
Doc ID 17546 Rev 28/27
VND830P-EElectrical specifications
Table 8.Status pin (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
= 1 mA66.88V
V
Table 9.Switching (V
Status clamp voltage
SCL
CC
= 13 V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
dV/dt
dV/dt
Table 10.Open-load detection
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
(on)
Turn-off voltage slope
(off)
STAT
I
= - 1 mA-0.7V
STAT
= 6.5 Ω from VIN rising
R
L
edge to V
R
= 6.5 Ω from VIN falling
L
edge to V
= 6.5 Ω from V
R
L
to V
OUT
= 6.5 Ω from V
R
L
to V
OUT
= 1.3 V
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
-30-µs
-30-µs
See
-
-
Figure 14
See
Figure 15
-V/µs
-V/µs
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)
Table 11.Logic input
Open-load on-state detection
OL
threshold
Open-load on-state detection
delay
Open-load off-state voltage
OL
detection threshold
Open-load detection delay at
turn-off
= 5 V 50100200mA
V
IN
= 0 A 200µs
I
OUT
V
= 0 V1.52.53.5V
IN
1000µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I
V
V
Input low level1.25V
IL
I
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
IH
Input hysteresis voltage0.5V
hyst
Input clamp voltage
ICL
= 1.25 V1µA
IN
= 3.25 V10µA
IN
I
= 1 mA 66.88V
IN
= -1 mA-0.7V
I
IN
Doc ID 17546 Rev 29/27
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