The VND810SP is a monolithic device designed
using| STMicroelectronics™ VIPower™ M0-3
Technology. The VND810SP is intended for
driving any type of multiple load with one side
connected to ground.
The Active V
device against low energy spikes (see ISO7637
transient compatibility table). Active current
limitation combined with thermal shutdown and
automatic restart protects the device against
overload.
The device detects the open-load condition in
both the on-state and off-state. In the off-state the
device detects if the output is shorted to V
device automatically turns off in the case where
the ground pin becomes disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To groundX
Through 10 KΩ
resistor
Doc ID 7377 Rev 45/27
Electrical specificationsVND810SP
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
I
- I
I
V
E
T
CC
CC
GND
OUT
OUT
I
IN
STAT
ESD
MAX
P
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC Status current+/- 10mA
Electrostatic discharge (human body model: R = 1.5 KΩ;
C=100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected
to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
Thermal resistance junction-case 2.4°C/W
Thermal resistance junction-ambient52.4
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
Figure 3.Current and voltage conventions
I
IN1
I
IN2
I
I
V
STAT2
STAT1
IN2
STAT2
V
IN1
V
STAT1
V
INPUT 1
STATUS 1
INPUT 2
STATUS 2
(1)
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
(*)
F1
V
CC
I
OUT1
OUTPUT 1
V
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
(2)
37
OUT1
°C/W
I
S
V
CC
1. V
= V
- V
Fn
CCn
during reverse battery condition.
OUTn
Doc ID 7377 Rev 47/27
Electrical specificationsVND810SP
Table 5.Power output
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
CC
V
USD
V
OV
R
ON
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Operating supply
voltage
5.51336V
Undervoltage shutdown345.5V
Overvoltage shutdown36V
I
= 1 A; Tj = 25 °C160mΩ
On-state resistance
Supply current
Off-state output current V
Off-state output current V
Off-state output current
Off-state output current
OUT
= 1 A; V
I
OUT
Off-state; V
V
= V
IN
OUT
Off-state; V
V
= V
IN
OUT
= 25 °C
T
j
On-state; V
= 0 A
I
OUT
= V
IN
OUT
= 0 V; V
IN
V
= V
IN
OUT
= 125 °C
T
j
V
= V
IN
OUT
=25°C
T
j
> 8 V320mΩ
CC
= 13 V;
CC
= 0 V
= 13 V;
CC
= 0 V;
= 13 V; V
CC
IN
= 5 V;
1240µA
1225µA
57mA
= 0 V 050µA
= 3.5 V -750µA
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
5µA
3µA
Table 6.Protections
SymbolParameterTest conditionsMin.Typ. Max.Unit
T
T
T
t
SDL
I
V
demag
Shutdown temperature150175200°C
TSD
Reset temperature135°C
R
Thermal hysteresis715°C
hyst
Status delay in overload
conditions
Current limitation
lim
Turn-off output clamp
voltage
> T
T
j
TSD
V
= 13 V3.557.5A
CC
5.5V < V
I
OUT
< 36 V7.5A
CC
V
-41V
CC
= 1A; L = 6mH
CC
-48V
20µs
-
CC
55
V
Note:To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
8/27Doc ID 7377 Rev 4
VND810SPElectrical specifications
Table 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
F
Table 8.Switching (V
Forward on voltage- I
= 13 V; Tj = 25 °C)
CC
= 0.5 A; Tj = 150 °C——0.6V
OUT
SymbolParameterTest conditionsMin.Typ.Max. Unit
RL = 13 Ω from VIN rising
t
d(on)
Turn-on delay time
edge to V
OUT
= 1.3 V
—30 —µs
(see Figure 5)
RL = 13 Ω from VIN falling
t
d(off)
Turn-off delay time
edge to V
OUT
= 11.7 V
—30 —µs
(see Figure 5)
dV
/dt
OUT
dV
OUT
Table 9.Logic inputs
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
RL = 13 Ω from V
to V
OUT
= 10.4 V
(see Figure 5)
RL = 13 Ω from V
to V
OUT
= 1.3 V
(see Figure 5)
OUT
OUT
= 1.3 V
= 11.7 V
—
—
See
Figure 10
See
Figure 12
—V/µs
—V/µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I
V
I
I(hyst)
Input low level1.25V
IL
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
IH
= 1.25 V1µA
IN
= 3.25 V10µA
IN
Input hysteresis voltage0.5V
I
= 1 mA 66.88V
Input clamp voltage
ICL
IN
I
= -1 mA-0.7V
IN
Table 10.Status pin
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
V
Status low output voltageI
STAT
Status leakage currentNormal operation; V
Status pin Input capacitance Normal operation; V
I
Status clamp voltage
SCL
STAT
I
STAT
= 1.6 mA0.5V
= 5 V10µA
STAT
= 5 V100pF
STAT
= 1 mA66.88V
= -1 mA-0.7V
Doc ID 7377 Rev 49/27
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