The VND810P-E is a monolithic device designed
in STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload.
The device detects open-load condition both in
on-state and off-state. Output shorted to V
detected in the off-state. Device automatically
turns off in case of ground pin disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
8
9
V
CC
V
CC
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
V
CC
V
CC
FloatingXXXX
To groundX
Through 10KΩ
resistor
Doc ID 17606 Rev 15/28
Electrical specificationsVND810P-E
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
I
- I
I
V
E
T
CC
CC
GND
OUT
OUT
I
IN
STAT
ESD
MAX
P
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC Status current+/- 10mA
Electrostatic discharge (human body model: R=1.5KΩ;
C = 100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected
to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 4 cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead 15°C/W
Thermal resistance junction-ambient77
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
Figure 3.Current and voltage conventions
I
IN1
I
IN2
I
I
V
STAT2
STAT1
IN2
STAT2
V
IN1
V
STAT1
V
INPUT 1
STATUS 1
INPUT 2
STATUS 2
(1)
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
(2)
57
OUT1
°C/W
I
S
V
CC
1. VFn = V
CCn
- V
during reverse battery condition.
OUTn
Doc ID 17606 Rev 17/28
Electrical specificationsVND810P-E
Table 5.Power output
SymbolParameterTest conditionsMin. Typ. Max. Unit
Operating supply
(1)
V
V
V
CC
USD
OV
R
I
S
voltage
(1)
Undervoltage shutdown345.5V
(1)
Overvoltage shutdown36V
I
= 1 A; Tj = 25 °C
On-state resistance
ON
(1)
Supply current
OUT
= 1 A; V
I
OUT
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
CC
= 13 V;
CC
= 0 V
= 13 V;
CC
= 0 V;
> 8 V
Tj = 25 °C
5.51336V
160
320mΩmΩ
1240µA
1225µA
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.
Table 6.Protections
Off-state output current V
Off-state output current V
Off-state output current
Off-state output current
(1)
On-state; V
= 0 A
I
OUT
= V
IN
= 0 V; V
IN
V
= V
IN
Tj = 125 °C
V
= V
IN
Tj =25°C
= 13 V; V
CC
= 0 V 050µA
OUT
= 3.5 V -750µA
OUT
= 0 V; V
OUT
= 0 V; V
OUT
CC
CC
= 5 V;
IN
= 13 V;
= 13 V;
57mA
5µA
3µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
T
t
Shutdown temperature150175200°C
TSD
Reset temperature135°C
T
R
Thermal hysteresis715°C
hyst
Status delay in overload
SDL
conditions
> T
T
j
TSD
20µs
VCC = 13 V3.557.5A
Current limitation
I
lim
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Turn-off output clamp voltage I
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
5.5 V < V
OUT
< 36 V7.5A
CC
= 1 A; L = 6 mHVCC-41 VCC-48 VCC-55V
8/28Doc ID 17606 Rev 1
VND810P-EElectrical specifications
Table 7.VCC - output diode
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
F
Table 8.Status pin
Forward on voltage-I
= 0.5 A; Tj = 150 °C——0.6V
OUT
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
I
LSTAT
C
V
Table 9.Switching (V
Status low output voltageI
STAT
STAT
Status leakage currentNormal operation; V
Status pin Input capacitance Normal operation; V
STAT
I
Status clamp voltage
SCL
CC
= 13V)
STAT
I
STAT
= 1.6 mA0.5V
= 5 V10µA
STAT
= 5V100pF
STAT
= 1mA66.88V
= - 1mA-0.7V
SymbolParameterTest conditionsMin.Typ.Max. Unit
= 13 Ω from VIN rising edge
R
t
d(on)
t
d(off)
Turn-on delay time
Turn-off delay time
L
to V
R
edge to V
= 1.3 V (see Figure 5)
OUT
= 13 Ω from VIN falling
L
OUT
= 11.7 V
—30 —µs
—30 —µs
(see Figure 5)
R
dV
dV
OUT
OUT
/dt
/dt
Turn-on voltage slope
(on)
Turn-off voltage slope
(off)
= 13 Ω from V
L
to V
= 10.4 V (see
OUT
Figure 5)
= 13 Ω from V
R
L
to V
= 1.3 V (see Figure 5)
OUT
OUT
OUT
= 1.3 V
= 11.7 V
—
—
See
Figure 21
See
Figure 22
—V/µs
—V/µs
Table 10.Open-load detection
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)
Open-load on-state detection threshold V
OL
Open-load on-state detection delayI
Open-load off-state voltage detection
OL
threshold
= 5 V 204080mA
IN
= 0 A 200µs
OUT
= 0 V1.52.53.5V
V
IN
Open-load detection delay at turn-off1000µs
Doc ID 17606 Rev 19/28
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