ST VND810MSP User Manual

®
VND810MSP
DOUB LE CH ANN EL HI GH SI DE DR IVER
TYPE R
DS(on)
I
OUT
V
CC
VND810MSP 150 m(*) 0.6 A (*) 36 V
(*) Per each channel
CMOS COMPATIBLE INPUTS
OPEN DRAIN STATUS OUTPUTS
ON STATE OPEN LO AD DETECTION
SHOR T E D L O A D PROT E C TION
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
PROTECTION AGAINST LOSS OF GROUND
VERY LOW STAND-BY CURRENT
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VND810MSP is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Activ e V against low energy spikes (see ISO7637 transient
pin voltage clamp protects the device
CC
compatibility table). Active current limitation
BLOCK DIAGRAM
10
1
PowerSO-10
ORDER CODES
PACKAGE TUBE T&R
PowerSO-10™ VND810MSP VND810MSP13TR
combined with thermal shutdown and automatic restart protects the device agai nst overload. The current limitation threshold is aimed at detecting the 21W/12V st andard bulb as an overload f ault. The device detects open load condition both in on and off state. Output shorted to V the off state. Device automatically turns off in case
is detected in
CC
of ground pin disconnection.
V
cc
V
cc
CLAMP
GND
INPUT1
STA TUS1
OVERTEMP. 1
INPUT2
STATUS2
OVERTEMP. 2
(**) See app l i cation sche m at i c at page 8
LOGIC
OVERVOLTAGE
UNDERVOLTAGE
CLAM P 1
DRIVER 1
CURRENT LIMITER 1
OPENLOAD ON 1
OPENLOAD OFF 1
CLAMP 2
DRIVER 2
CURRENT LIMITER 2
OPENLOAD ON 2
OPENLOAD OFF 2
OUTPUT1
OUTPUT2
Rev . 1
July 2004 1/19
1
VND810MSP
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V
CC
DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Current +/- 10 mA Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy (L=400mH; R
=0; V
L
=13.5V; T
bat
=150ºC; IL=0.9A)
jstart
4000 4000 5000 5000
225 mJ
Power Dissipation TC=25°C 52 W Junction Operating Temperature Internally Limited °C
j
Case Operating Temperature - 40 to 150 °C
c
Storage Temperature - 55 to 150 °C
- V
- I
- I
V
E
V
CC
GND
I
OUT
OUT
I
IN
I
stat
ESD
MAX
P
T
T
T
stg
tot
V V V V
CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C. PINS
GROUND INPUT 1 STATUS 1 STATUS 2 INPUT 2
6 7 8 9
10
11
V
CC
5 4 3 2 1
OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2
Connection / Pin Status N.C. Output Input
Floating X X X X To Ground X Through 10Kresistor
CURRENT AND VOLTAGE CONVENTIONS
I
S
I
IN1
I
V
IN1
V
STAT1
STAT1
I
IN2
I
V
STAT2
IN2
V
STAT2
INPUT 1
STATUS 1
INPUT 2
STATUS 2
GND
V
CC
OUTPUT 1
OUTPUT 2
I
GND
I
OUT2
V
(*)
V
F1
V
I
OUT1
V
OUT2
CC
OUT1
(*) VFn = V
2/19
1
CCn
- V
during reverse battery condition
OUTn
VND810MSP
THERMAL DATA
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
(1) When mounted on a standard single-sided FR -4 board wi th 0.5 cm2 of Cu (at least 35µm thick). Horizontal mounting and no arti ficial air
flow.
(2) When mounted on a standard single-sided FR-4 board with 6 cm
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C < Tj <150°C, unless otherwise specified)
(Per each channel) POWER OUTPUTS
Symbol Parameter Test Conditions Min Typ Max Unit
V
CC
V
USD
V
OV
R
ON
IS (**) Supply Current
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
(**) Per device
SWITCHING (VCC=13V)
Symbol Parameter Test Conditions Min Typ Max Unit
t
d(on)
t
d(off)
dV
OUT
dt
(on)
dV
OUT
dt
(off)
Thermal Resistance Junction-case 2.4 °C/W
Thermal Resistance Junction-ambient 52.4
2
of Cu (a t l eas t 3 5µm thi c k). Hor izo nt al m oun ti ng and no arti f ici al ai r fl ow .
(1)
37
(2)
°C/W
(**) Operating Supply Voltage 5.5 13 36 V
(**) Undervoltage Shut-down 3 4 5.5 V
(**) Overvoltage Shut-down 36 V
On State Resistance
Off State Output Current VIN=V Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V
Turn-on Delay Time
Turn-off Delay Time
/
Turn-on Voltage Slope
/
Turn-off Voltage Slope
I
=0.5A; Tj=25°C
OUT
=0.5A; VCC>8V
I
OUT
Off State; V Off State; V
=13V; VIN=V
CC
=13V; VIN=V
CC
Tj=25°C
On State; V
OUT
OUT OUT
=13from VIN rising edge to
R
L
V
=1.3V
OUT
=13from VIN falling edge to
R
L
V
=11.7V
OUT
=13from V
R
L
V
=10.4V
OUT
=13from V
R
L
V
=1.3V
OUT
=13V; VIN=5V; I
CC
=0V 0 50 µA
=3.5V -75 0 µA
OUT
=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA
=1.3V to
OUT
=11.7V to
OUT
OUT OUT
=0V =0V;
OUT
=0A
12
12
5
30 µs
30 µs
See
relative
diagram
See
relative
diagram
150 320
40
25
7
m m
µA
µA
mA
V/µs
V/µs
LOGIC INPUT
Symbol Param eter Test Conditions Min Ty p Max Unit
V
V
V
I
IL
V
I
IH
I(hyst)
ICL
Input Low Level 1.25 V
IL
Low Level Input Current VIN = 1.25V 1 µA Input High Level 3.25 V
IH
High Level Input Current VIN = 3.25V 10 µA Input Hysteresis Voltage 0.5 V
Input Clamp Voltage
I
= 1mA
IN
= -1mA
I
IN
6 6.8
-0.7
8V
V
3/19
1
VND810MSP
ELECTRICAL CHARACTERISTICS (continued)
V
- OUTPUT DIODE
CC
Symbol Parameter Test Conditions Min Typ Max Unit
V
STATU S PIN
Symbol Parameter Test Conditions Min Typ Max Unit
V
STAT
I
LSTAT
C
STAT
V
SCL
PROTECTIONS (see note 1)
Symbol Parameter Test Conditions Min Typ Max Unit
T
TSD
T
T
hyst
t
SDL
I
lim
V
demag
Forward on Voltage -I
F
Status Low Output Voltage I Status Leakage Current Normal Operation; V Status Pin Input
Capacitance Status Clamp Voltage
=0.5A; Tj=150°C 0.6 V
OUT
= 1.6 mA 0.5 V
STAT
= 5V 10 µA
STAT
Normal Operation; V I
= 1mA
STAT
I
= - 1mA
STAT
= 5V 100 pF
STAT
66.8
-0.7
Shut-down Temperature 150 175 200 °C Reset Temperature 135 °C
R
Thermal Hysteresis 7 15 °C Status Delay in Overload
Conditions Current limitation Turn-off Output Clamp
Voltage
Tj>T
TSD
0.6 0.9 1.2
5.5V<VCC<36V I
=0.5A; L=6mH VCC-41 VCC-48 VCC-55 V
OUT
8V
20 µs
1.2
V
A A
Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signal s mu st be us ed together with a prope r software strategy. If t he device is subjected to abnormal conditions, this sof tware must l i m i t t he duration and numbe r of activati on cycles
OPENLOAD DETECTION
Symbol Parameter Test Conditions Min Typ Max Unit
I
OL
t
DOL(on)
V
OL
t
DOL(off)
Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State
Voltage Detection Threshold
Openload Detection Delay at Turn Off
OPEN LOAD STATUS TIMING (with external pull-up)
V
OUT
V
INn
V
STAT n
t
DOL(off)
=5V 20 40 80 mA
V
IN
=0A 200 µs
I
OUT
V
=0V 1.5 2.5 3.5 V
IN
OVER TEMP STATUS TIMIN G
V
INn
V
STAT n
t
SDL
Tj > T
TSD
t
> V
I
< I
OUT
t
DOL(on)
OL
OL
1000 µs
SDL
4/19
2
1
Swit c hing time Wa vefo rms
V
OUTn
dV
/dt
OUT
(on)
V
INn
t
d(on)
80%
10%
VND810MSP
90%
dV
/dt
OUT
(off)
t
td
(off)
TRUTH TABLE
CONDITIONS INPUT OUTPUT STATUS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > V
Output Current < I
OL
OL
t
L
H
L H H
L H
L H
L H
L H
L H
L
H
L X X
(T (T
< T
j
> T
j
L
L
L
L
L
L H
H
L H
TSD
TSD
H H
H
) H
) L
H
L
X X
H H
L
H H
L
5/19
1
VND810MSP
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1
Test Pulse
1 -25 V -50 V -75 V -100 V 2 ms 10
2 +25 V +50 V +75 V +100 V 0.2 ms 10 3a -25 V -50 V -100 V -150 V 0.1 µs 50 3b +25 V +50 V +75 V +100 V 0.1 µs 50
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2
ISO T/R 7637/1
Test Pulse
1CCCC
2CCCC 3aCCCC 3bCCCC
4CCCC
5CEEE
CLASS CONTENTS
C All functions of the device are performed as designed after exposure to disturbance.
E One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
I II III IV Delays and
I II III IV
TEST LEVELS
TEST LEVELS RESULTS
Impedance
6/19
1
1
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