ST VND810-E User Manual

VND810-E

DOUBLE CHANNEL HIGH SIDE DRIVER

Table 1. General Features

Type R

VND810-E 160 m

(*) Per each channel

CMOS COMPATIBLE INPUTS

■

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LO AD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHOR T E D L O A D PROT E C TION

■ UNDERVOLTAGE AND OVERVOLTAGE

DS(on)

Ω (*) 3.5A (*) 36 V

I

out

V

CC

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (**)

■ IN COMPLIANCE WITH THE 2002/95/EC

EUROPEAN DIRECT IVE

DESCRIPTION

The VND810-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground.

Activ e V

pin voltage clamp pro tects the device

CC

against low energy spikes (see ISO7637 transient compatibility table).

Figure 1. Package

SO-16

Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shor te d to V

is detected in the off state. Device

CC

automatically turns off in case of ground pin disconnection.

Table 2. Order Codes

Package Tube Tape and Reel

SO-16

Note: (**) See application schematic at page 9

VND810-E VND810TR-E

Rev. 1

1/20October 2004

VND810-E

Figure 2. Block Diagram

V

cc

CLAMP

OVERVOLTAGE

UNDERVOLTAGE

V

cc

GND

INPUT1

STATUS1

INPUT2

STATUS2

OVERTEMP. 1

OVERTEMP. 2

LOGIC

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

CLAMP 1

CLAMP 2

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD OFF 2

Table 3. Absolute Maximum Ratings

Symbol Parameter Value Unit

DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Current +/- 10 mA Electrostatic Discharge (Human Body Model:

R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPUT

- V

CC

4000 4000 5000 5000

Maximum Switching Energy (L=1.5mH; R

I

=5A)

L

=0Ω; V

L

=13.5V; T

bat

jstart

=150ºC;

26 mJ

Power Dissipation TC=25°C 8.3 W Junction Operating Temperature Internally Limited °C Case Operating Temperature - 40 to 150 °C Storage Temperature - 55 to 150 °C

- V

- I I

- I

V

E

V

CC

GND

OUT

I

IN

I

stat

ESD

MAX

P

tot

T

stg

CC

j

c

OUTPUT1

OUTPUT2

V V V V

2/20

VND810-E

Figure 3. Con fig urat i on Dia g ra m (Top View) & Sugg est ed C o nnections for Unused and N.C. Pins

V

CC

N.C.

GND

INPUT 1 STATUS 1 STATUS 2

INPUT 2

V

CC

Connection / Pin Status N.C. Output Input

Floating X X X X To Ground X Through 10KΩ resistor

Figure 4. Current and Voltage Conventions

1

8

16

9

V

CC

V

CC

OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 V

CC

V

CC

I

S

V

(*)

F1

I

OUT2

V

I

OUT1

V

OUT2

OUT1

V

CC

(*) VFn = V

CCn

V

- V

I

IN1

I

IN1

V

STAT1

I

IN2

I

V

STAT2

IN2

STATUS 2

V

STAT2

during reverse battery condition

OUTn

INPUT 1

STATUS 1

INPUT 2

GND

V

CC

OUTPUT 1

OUTPUT 2

I

GND

Table 4. Thermal Data

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

Note: 1. When mounted on a standard single-sided FR-4 board with 0.5cm

Note: 2. When mounted on a standard single-sided FR-4 board with 4cm

Thermal Resistance Junction-lead 15 °C/W

Thermal Resistance Junction-ambient 77

2

mounting and no art i f i cial air flow .

mounting and no art i f i cial air flow.

of Cu (at least 35µm thick) connected to all VCC pins. Horizontal

2

of Cu (at least 3 5µm thick) connected to all VCC pins. Hori zontal

(1)

57

(2)

°C/W

3/20

VND810-E

ELECTRICAL CHARACTERISTICS

(8V<V

(Per each channel)

Table 5. Po we r Ou t put

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

Note: (**) Per device.

<36V; -40°C < Tj <150°C, unless otherwise specified)

CC

(**) Operating Supply Voltage 5.5 13 36 V

CC

(**) Undervoltage Shut-down 3 4 5.5 V

USD

(**) Overvoltage Shut- down 36 V

OV

I

R

ON

(**) Supply Current

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

On State Resistance

Off State Output Current VIN=V Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

=1A; Tj=25°C

OUT

I

=1A; VCC>8V

OUT

Off State; V Off State; V

Tj=25°C

On State; V

OUT

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

OUT OUT

=0V =0V;

12

=13V; VIN=5V; I

CC

OUT

=0A

5

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA

160 320

40

25

7

mΩ mΩ

µA

mA

Table 6. Protection (see note 1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

TSD

T

hyst

t

SDL

I

lim

V

demag

Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be

Shut-down Temperature 150 175 200 °C Reset Temperature 135 °C

R

Thermal Hysteresis 7 15 °C Status Delay in Overload

Conditions

Current limitation

Turn-off Output Clamp Voltage

used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles

Tj>T

TSD

5.5V<VCC<36V

=1A; L=6mH

I

OUT

3.5 5 7.5

-

V

CC

V

41

CC

-48

V

20 µs

7.5

-

CC

55

A A

V

Table 7. VCC - Output Diode

Symbol Parameter Test Conditions Min Typ Max Unit

V

Forward on Voltage -I

F

=0.5A; Tj=150°C 0.6 V

OUT

4/20

VND810-E

ELECTRICAL CHARACTERISTICS (continued) Table 8. Status Pin

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I

= 1.6 mA 0.5 V

STAT

Status Leakage Current Normal Operation; V Status Pin Input

Capacitance Status Clamp Voltage

Normal Operation; V I

= 1mA

STAT

= - 1mA

I

STAT

= 5V 10 µA

STAT

= 5V 100 pF

STAT

66.8

8V

-0.7

V

Table 9. Switching (V

CC

=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

=13Ω from VIN rising edge to

R

L

V

=1.3V

OUT

=13Ω from VIN falling edge to

R

L

V

=11.7V

OUT

=13Ω from V

R

L

V

=10.4V

OUT

=13Ω from V

R

L

V

=1.3V

OUT

=1.3V to

OUT

=11.7V to

OUT

30 µs

See

relative

diagram

See

relative

diagram

dV

t

OUT

d(on)

d(off)

Turn-on Delay Time

Turn-off Delay Time

/dt

Turn-on Voltage Slope

(on)

/dt

Turn-off Voltage Slope

(off)

Table 10. Openload Detection

Symbol Parameter Test Conditions Min Typ Max Unit

I

OL

t

DOL(on)

V

OL

t

DOL(off)

Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State

Voltage Detection Threshold

Openload Detection Delay at Turn Off

=5V 20 40 80 mA

V

IN

I

=0A 200 µs

OUT

V

=0V 1.5 2.5 3.5 V

IN

1000 µs

V/µs

Table 11. Logic Input

Symbol Parameter Test Conditions Min Typ Max Unit

V

I(hyst)

V

I

V

I

IH

ICL

Input Low Level 1.25 V

IL

Low Level Input Current VIN = 1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Current VIN = 3.25V 10 µA Input Hysteresis Voltage 0.5 V

Input Clamp Voltage

I

= 1mA

IN

= -1mA

I

IN

66.8

-0.7

8V

V

5/20

VND810-E

Figure 5.

OPEN L OAD STATUS TIMING (with ex terna l pu ll-u p)

V

> V

OUT

OL

V

INn

V

STAT n

t

DOL(off)

t

DOL(on)

Tabl e 12. Truth Table

CONDITIONS INPUT OUTPUT SENSE

Normal Operation

Current Limitation

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

OL

L

H

L H H

L H

I

OUT

< I

OVERTEMP STA TUS TIMING

OL

V

INn

V

STAT n

L

H

L X X

L

L H

H

t

SDL

Tj > T

TSD

(T

< T

j

> T

j

t

TSD

SDL

H H

H

) H

) L

H L

X X

H H

L H

Output Current < I

6/20

OL

L

H

L H

H L

ST VND810-E User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual