The VND810 is a monolithic device designe d in
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active VCC pin voltag e clamp protects th e dev ice
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
BLO C K DIAG RA M
SO-16
ORDER CODES
PACKAGETUBET&R
SO-16
VND810VND81013TR
combined with thermal shutdown and automatic
restart protects the device against overloa d. The
device detects open load condition both in on and
off state. Output shorted to VCC is detected in the
off state. Dev ice auto mati cally tur ns off in c ase of
ground pin disconnection.
V
cc
V
cc
CLAMP
GND
INPUT1
STATUS1
OVERTEMP. 1
INPUT2
STATUS2
OVERTEMP. 2
(**) See appl ic ation schema tic at page 8
LOGIC
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
DRIVER 1
CURRENT LIMITER 1
OPENLOAD ON 1
OPENLOAD OFF 1
CLAMP 2
DRIVER 2
CURRENT LIMITER 2
OPENLOAD ON 2
OPENLOA D OFF 2
OUTPUT1
OUTPUT2
July 20021/19
VND810
ABSOLUTE MAXIMUM RATI NG
SymbolParameterValueUnit
tot
DC Supply Voltage41V
Reverse DC Supply Voltage- 0.3V
CC
DC Reverse Ground Pin Current- 200mA
DC Output CurrentInternally LimitedA
Reverse DC Output Current - 6A
DC Input Current+/- 10mA
DC Status Cur rent+/- 10mA
Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPU T
- V
CC
Maximum Switching Energy
(L=1.5mH; R
=0Ω; V
L
=13.5V; T
bat
=150ºC; IL=5A)
jstart
4000
4000
5000
5000
26mJ
Powe r Dissipation TC=25°C8.3W
Junction Operating TemperatureInternally Limited°C
j
Case Operating Temperature- 40 to 150°C
c
Storage Temperature- 55 to 150°C
V
CC
- V
- I
GND
I
OUT
- I
OUT
I
IN
I
stat
V
ESD
E
MAX
P
T
T
T
stg
CONNECTION DIAGRAM (TOP VIEW)
V
V
V
V
V
CC
N.C.
GND
INPUT 1
ST ATUS 1
STA TUS 2
INPUT 2
V
CC
CURRENT AND VOLTAGE CONVENTIONS
I
IN1
I
V
IN1
V
STAT 1
STAT1
I
IN2
I
V
STAT2
IN2
V
STAT2
INPUT 1
STATUS 1
INPUT 2
STATUS 2
1
16
V
CC
V
CC
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
V
CC
8
V
9
CC
I
S
V
I
OUT1
CC
V
CC
OUTPUT 1
V
OUT1
I
OUT2
V
OUT2
GND
OUTPUT 2
I
GND
2/19
VND810
THERMAL DATA
SymbolParameterValueUnit
R
thj-lead
R
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
CAll func tions of the device are performed as desi gned afte r exposure to disturbance.
EOne or more f unctions of the device is not per formed as designe d after exp osure and cannot be
returned to prop er operation withou t replacing the device.
IIIIIIIVDelays and
IIIIIIIV
TEST LEVELS
TEST LEVELS RESULTS
Impedance
Ω
Ω
6/19
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