ST VND5N07 User Manual

VND5N07

OMNIFET II fully autoprotected Power MOSFET

Features

Max. on-state resistance (per ch.)	RDS (on)	0.2Ω
Current limitation (typ)	ILIMH	5 A
Drain-Source clamp voltage	VCLAMP	70V

■Linear current limitation

■Thermal shutdown

■Short circuit protection

■Integrated clamp

■Low current drawn from input pin

■Diagnostic feedback through input pin

■Esd protection

■Direct access to the gate of the power mosfet (analog driving)

■Compatible with standard Power MOSFET

3

3

1	2
	1
DPAK	IPAK
TO-252	TO-251

ISOWATT200

SOT-82FM

Description

The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Table 1.	Device summary
	Package		Order codes
		Tube		Tape and reel
	DPAK	VND5N07		VND5N0713TR
	IPAK	VND5N07-1
	ISOWATT220	VNP5N07FI
	SOT-82FM	VNK5N07FM

December 2008

Rev 3

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www.st.com

Contents	VND5N07

Contents

1	Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 5
2	Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		6
	2.1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	2.2	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	2.3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.4	Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	13
3	Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		17
	3.1	Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
	3.2	Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
	3.3	Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . .	17
	3.4	Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
4	Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		18
	4.1	ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	18
	4.2	DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	18
	4.3	IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	20
	4.4	ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	21
	4.5	SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	22
5	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		23

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VND5N07	List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 8. Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 8 Table 10. DPAK mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 11. IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 12. ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 13. SOT-82FM mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 14. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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List of figures	VND5N07

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 3. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 4. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 6. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 7. Switching waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 8. Thermal impedance for ISOWATT220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 9. Thermal impedance for DPAK / IPAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 10. Source-Drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 11. Static Drain-Source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 12. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 13. Static Drain-Source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 14. Normalized on resistance Vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 15. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 16. Static Drain-Source on resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 17. Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 18. Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 19. Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 20. Input voltage Vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 21. Turn-off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 22. Turn-off Drain-Source voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 23. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 24. Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 25. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 26. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 27. Normalized on resistance Vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 28. Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 29. Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 30. DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 31. IPAK mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 32. ISOWATT220 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 33. SOT-82FM mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

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VND5N07	Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

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Electrical specifications	VND5N07

2 Electrical specifications

2.1Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality document.

Table 2.	Absolute maximum ratings
Symbol	Parameter			Value		Unit
		DPAK / IPAK		ISOWATT220	SOT-82FM
VDSn	Drain-Source voltage (VINn = 0V)	Internally clamped				V
VINn	Input voltage		18			V
IDn	Drain current		Internally limited			A
IRn	Reverse DC output current		-7			A
VESD	Electrostatic discharge (R = 1.5KΩ,		2000			V
	C = 100pF)
Ptot	Total dissipation at Tc = 25°C	60		24	9	W
Tj	Operating junction temperature		Internally limited			°C
Tc	Case operating temperature	Internally limited				°C
Tstg	Storage temperature			-55 to 150		°C

2.2Thermal data

Table 3.	Thermal data
Symbol	Parameter		Max. value		Unit
		DPAK / IPAK	ISOWATT220	SOT-82FM
Rthj-case	Thermal resistance junction-case	3.75	5.2	14	°C/W
Rthj-amb	Thermal resistance junction-ambient	100	62.5	100	°C/W

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VND5N07	Electrical specifications

2.3Electrical characteristics

Tcase = 25°C unless otherwise stated.

	Table 4.	Off
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	VCLAMP	Drain-Source clamp	VIN = 0V; ID = 200mA	60	70	80	V
		voltage
	VCLTH	Drain-Source	VIN = 0V; ID = 2mA	55			V
		threshold voltage
	IISS	Supply current from	VDS = 0V; VIN = 10V		250	500	µA
		input pin
	VINCL	Input-Source reverse	IIN = 1mA	-1.0		-0.3	V
		clamp voltage
		Zero input voltage	VDS = 13V; VIN = 0V;			50	µA
	IDSS	drain current
			VDS = 25V; VIN = 0V			200	µA
		(VIN=0V)
	Table 5.	On(1)
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	RDS(on)	Static Drain-Source	VIN =10V; ID = 2.5A;			200	mΩ
		on resistance	VIN = 5V; ID = 2.5A			280
	VIN(th)	Input threshold	VDS = Vin; ID + Iin = 1 mA	0.8		3	V
		voltage

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Table 6.	Dynamic
Symbol	Parameter			Test conditions			Min.	Typ.	Max.	Unit
g (1)	Forward	V		= 13V; I		= 2.5A	3	4		S
			DS		D
fs	transconductance
COSS	Output capacitance	VDS = 13V; f = 1MHz; VIN = 0V						200	300	pF

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

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Electrical specifications								VND5N07
	Table 7.	Switching(1)
	Symbol	Parameter			Test conditions	Min.	Typ.	Max.	Unit
	td(on)	Turn-on delay time					50	100	ns
	tr	Rise time	V	DD	= 15V; I = 2.5A		60	100	ns
					D
	td(off)	Turn-off delay time	Vgen = 10V; Rgen = 10Ω				150	300	ns
	tf	Fall time					40	80	ns
	td(on)	Turn-on delay time					150	250	ns
	tr	Rise time	V	DD	= 15V; I = 2.5A		400	600	ns
					D
	td(off)	Turn-off delay time	Vgen = 10V; Rgen = 1kΩ				3900	5000	ns
	tf	Fall time					1100	1600	ns
	(dI/dt)on	Turn-on current slope	VDD = 15V; ID = 2.5A				80		A/µS
			Vin = 10V; Rgen = 10Ω
	Qi	Total input charge	VDD = 12V; ID = 2.5A; VIN = 10V				18		nC

1. Parameters guaranteed by design / characterization.

Table 8.		Source Drain diode
Symbol		Parameter	Test conditions	Min.	Typ.	Max.	Unit
	(1)	Forward On voltage	ISD = 2.5A; VIN = 0V			1.6	V
VSD
trr(2)		Reverse recovery time			150		ns
Q	(2)	Reverse recovery	ISD = 2.5A; dI/dt = 100 A/µs		0.3		µC
		charge
	rr		VDD = 30V;
	(2)	Reverse recovery
IRRM		current			5.7		A

1.Pulsed: pulse duration = 300µs, duty cycle 1.5%.

2.Parameters guaranteed by design / characterization.

	Table 9.	Protections (-40°C < Tj < 150°C, unless otherwise specified)
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	Ilim	Drain current limit	VIN = 10V; VDS = 13V	3.5	5	7	A
			VIN = 5V; VDS = 13V	3.5	5	7	A
	(1)	Step response current	VIN = 10V;		15	20	µS
	tdlim	limit	VIN = 5V		40	60	µS
	(1)	Overtemperature		150			°C
	Tjsh	shutdown
	Tjrs(1)	Overtemperature reset		135			°C
	(1)	Fault sink current	VIN = 10V; VDS = 13V;		50		mA
	Igf		VIN = 5V; VDS = 13V		20		mA
	(1)	Single pulse	Starting Tj = 25°C; VDD = 20V	0.2			J
	Eas	avalanche energy	VIN = 10V Rgen = 1kΩ; L = 10mH

1. Parameters guaranteed by design / characterization.

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