Double channel high side driver for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28V
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– Open Drain status output
– On-state open load detection
– Off-state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Over-temperature shutdown with
autorestart (thermal shutdown)
– Reverse battery protected
(a)
41V
160 mΩ
10A
(1)
2 µA
PowerSSO-12
Application
■ All types of resistive, inductive and capacitive
loads
Description
The VND5E160J-E is a double channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-12 package.
The VND5E160J-E is designed to drive automotive
grounded loads delivering protection, diagnostics
and easy 3V and 5V CMOS-compatible interface
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with autorestart and over-voltage active clamp.
A dedicated active low digital status pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground, over-temperature indication, short-circuit
to V
diagnosis and ON & OFF state open-load
CC
detection.
The diagnostic feedback of the whole device can
be disabled by pulling the STAT_DIS pin up, thus
allowing wired-ORing with other similar devices.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
V
ON
CH 1
Channels 2
CH 2
OUT2
CONTROL & DIAGNOSTIC
OUT1
GND
STATUSnOpen Drain digital diagnostic pin.
STAT_DIS
Active high CMOS compatible pin, to disable the STATUS pin.
5/34
Block diagram and pin configurationVND5E160J-E
Figure 2.Configuration diagram (top view)
TA B = V
GND
STAT_DIS
INPUT 1
STATUS 1
STATUS 2
INPUT 2
1
2
3
4
5
6
12
11
10
9
8
7
cc
N.C.
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
N.C.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInputSTAT_DIS
FloatingXXXXX
To ground
Not
allowed
X
Not
allowed
Through 10kΩ
resistor
Through 10kΩ
resistor
6/34
VND5E160J-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
Fn
S
V
CC
V
CC
V
I
SD
V
Note:V
Fn
= V
SD
- VCC during reverse battery condition.
OUTn
I
INn
V
INn
INPUTn
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in the “Absolute maximum
ratings” tables for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and other relevant quality documents.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
GND
OUTPUTnSTAT_DIS
STATUSn
I
GND
I
OUTn
I
STATn
V
STATn
V
OUTn
V
CC
- V
CC
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
I
STAT_DIS
E
MAX
DC supply voltage41V
Reverse DC supply voltage0.3V
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 6A
DC input current+10 / -1mA
DC status current+10 / -1mA
DC status disable current+10 / -1mA
Maximum switching energy (single pulse)
(L=8mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
36mJ
7/34
Electrical specificationsVND5E160J-E
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
Electrostatic discharge
(Human body model: R=1.5KΩ; C=100pF)
4000
4000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
–INPUT
–STATUS
–STAT_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150°C
T
j
Storage temperature- 55 to 150°C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case
(with one channel ON)
Values specified in this section are for 8V<VCC<28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
=1A; Tj=25°C
On state resistance
ON
Clamp voltageIS=20 mA414652V
clamp
(1)
OUT
I
=1A; Tj=150°C
OUT
=1A; VCC=5V; Tj= 25°C
I
OUT
Off State; V
=25°C
T
I
Supply current
S
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Off state output current
Output - VCC diode
V
F
voltage
(1)
j
On State; VIN=5V; VCC=13V;
=0A
I
OUT
VIN=V
(1)
OUT
V
IN=VOUT
-I
=0.6A; Tj=150°C0.7V
OUT
Table 6.Switching (VCC=13V; Tj=25°C)
=13V; VIN=V
CC
OUT
=0V;
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C00
0.5V
160
mΩ
320
mΩ
210
mΩ
(2)
3
(2)
5
6µAmA
2
0.0135µA
µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
=13Ω
R
L
(see Figure 6.)
=13Ω
R
L
(see Figure 6.)
RL=13Ω
(see Figure 6.)
RL=13Ω
(see Figure 6.)
10µs
15µs
See
Figure 26.
See
Figure 28.
70µJ
40µJ
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
/dt
/dt
ON
OFF
Turn-On delay time
Turn-Off delay time
Turn-On voltage slopeRL=13Ω
(on)
Turn-Off voltage slopeRL=13Ω
(off)
Switching energy losses
t
during
won
Switching energy losses
t
during
woff
V/µs
V/µs
9/34
Electrical specificationsVND5E160J-E
Table 7.Status pin (VSD=0)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
STAT
I
LSTAT
C
STAT
V
Table 8.Protection
Status low output
voltage
Status leakage current
Status pin input
capacitance
Status clamp voltage
SCL
(1)
= 1.6 mA, VSD=0V0.5V
I
STAT
Normal operation or V
= 5V
V
STAT
SD
=5V,
Normal operation or VSD=5V,
V
= 5V
STAT
I
STAT
I
STAT
= 1mA
= - 1mA
5.5
-0.7
10µA
100pF
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
=13V
I
limH
I
limL
T
T
T
T
HYST
t
SDL
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit
current
Short circuit current
during thermal cycling
Shutdown
TSD
temperature
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of
RS
STATUS
Thermal hysteresis
(T
- TR)
TSD
Status delay in
overload conditions
Turn-off output voltage
clamp
I
Output voltage drop
ON
limitation
V
CC
5V<V
T
j>TTSD
=1A; VIN=0; L=20mHVCC-41VCC-46 VCC-52V
OUT
<28V
CC
=13V
V
CC
T
R<Tj<TTSD
(see Figure 4.)20µs
I
= 0.03A
OUT
(see Figure 5.)
=-40°C...+150°C
T
j
7101414A
2.5A
150175200°C
135°C
7°C
25mV
V
A
10/34
VND5E160J-EElectrical specifications
Table 9.Open load detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
t
DOL(on)
Openload ON state
OL
detection threshold
Openload ON state
detection delay
Delay between INPUT
t
POL
falling edge and
STATUS rising edge in
open load condition
Openload OFF state
V
voltage detection
OL
threshold
Output short circuit to
t
DSTKON
Vcc detection delay at
turn off
I
L(off2)
Off state output
current
Delay response from
td_vol
output rising edge to
STATUS falling edge in
open load
1. For each channel.
(1)
VIN = 5V 1040mA
I
= 0A, VCC=13V
OUT
(See Figure 4.)
= 0A (see Figure 4.)2005001200µs
I
OUT
200µs
VIN = 0V24V
(See Figure 4.)180t
VIN= 0V; V
(see Section 3.4: Open load
OUT
= 4V
-750µA
POL
µs
detection in Off state)
V
IN
= 0V; V
= 4V20µs
OUT
Table 10.Logic Input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
V
I
SDL
V
I
SDH
V
SD(hyst)
V
SDCL
Input low level0.9V
IL
Low level input currentVIN = 0.9V1µA
I
IL
Input high level2.1V
IH
High level input currentVIN = 2.1V10µA
I
IH
Input hysteresis voltage0.25V
= 1mA
I
Input clamp voltage
ICL
STAT_DIS low level voltage0.9V
SDL
IN
= -1mA
I
IN
5.5
-0.7
Low level STAT_DIS currentVSD=0.9V1µA
STAT_DIS high level voltage2.1V
SDH
High level STAT_DIS currentVSD=2.1V10µA
STAT_DIS hysteresis voltage0.25V
I
STAT_DIS clamp voltage
=1mA
SD
ISD=-1mA
5.5
-0.7
7V
7V
V
V
11/34
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