Double channel high-side driver with analog current sense
("1($'5
Features
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ.)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliance with European directive
2002/95/EC
– Very low current sense leakage
– AEC-Q100 qualified
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E160ASO-E is a single channel highside driver manufactured using ST proprietary
VIPower
SO-16L package. The device is designed to drive
12 V automotive grounded loads, and to provide
protection and diagnostics. It also implements a
3 V and 5 V CMOS-compatible interface for use
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with autorestart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, shortcircuit to V
open-load detection. The current sensing and
diagnostic feedback of the whole device can be
disabled by pulling the CS_DIS pin high to share
the external sense resistor with similar devices.
®
M0-5 technology and housed in
diagnosis and on-state and off-state
CC
June 2012Doc ID 022480 Rev 41/35
This is information on a product in full production.
Stressing the device above the rating listed in Table 3: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
I
OUT
-I
I
CSD
-I
CSENSE
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse DC output current 6A
OUT
I
DC input current -1 to 10mA
IN
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
(L = 12 mH; RL=0Ω; V
MAX
I
OUT=IlimL
(Typ.))
=13.5V; T
bat
jstart
=150°C;
V
-41
CC
+V
CC
34mJ
V
V
Doc ID 022480 Rev 47/37
Electrical specificationsVND5E160ASO-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R = 1.5 KΩ;
C = 100 pF)
V
V
ESD
ESD
T
– INPUT
– CURRENT SENSE
–CS_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
T
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
4000
2000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 4.Thermal data
SymbolParameterTypical valueUnit
R
th j_pcb
R
thj-amb
Thermal resistance junction-pcb (with one channel ON)
1. The measure is done in accordance with the JESD 51-8.
(1)
21°C/W
8/37Doc ID 022480 Rev 4
VND5E160ASO-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
clamp
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
I
Supply current
S
Off-state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
I
=1A; Tj= 25°C160mΩ
OUT
(1)
I
=1A; Tj= 150°C320mΩ
OUT
I
=1A; VCC=5V; Tj= 25°C210mΩ
OUT
Off-state; VCC=13V; Tj=25°C;
V
IN=VOUT=VSENSE=VCSD
On-state; V
=0A
I
OUT
VIN=V
=25°C
T
j
V
IN=VOUT
T
= 125°C
j
-I
=0.6A; Tj= 150°C0.7V
OUT
=13V; VIN=5V;
CC
=0V; VCC=13V;
OUT
=0V; VCC=13V;
=0V
0.5V
(2)
(2)
5
2
µA
36mA
00.01 3 µA
05µA
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditionsMin.Typ.Max. Unit
Turn-on delay time RL=13Ω (see Figure 6)—10— µs
Turn-off delay time RL=13Ω (see Figure 6)—15— µs
/dt)onTurn-on voltage slopeRL=13Ω —See Figure 26—V/µs
/dt)
Turn-off voltage slopeRL=13Ω—See Figure 28—V/µs
off
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL=13Ω (see Figure 6)—0.03—mJ
RL=13Ω (see Figure 6)—0.02—mJ
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Doc ID 022480 Rev 49/37
Electrical specificationsVND5E160ASO-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN=2.1V10µA
IH
Input hysteresis voltage0.25V
I
=1mA5.57V
Input clamp voltage
ICL
IN
I
=-1mA-0.7V
IN
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
=1mA5.57V
CS_DIS clamp voltage
CSD
I
=-1mA-0.7V
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
=13V71014A
I
I
T
T
T
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
DC short circuit current
limH
Short circuit current
limL
during thermal cycling
Shutdown temperature150175200°C
TSD
T
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of STATUS135°C
RS
Thermal hysteresis
HYST
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CC
5V<V
V
CC
I
OUT
<28V14A
CC
=13V; TR<Tj<T
=1A; VIN=0;
L=20mH
= 0.03 A;
I
OUT
= -40°C...150°C
T
j
(see Figure 8)
TSD
2.5A
7°C
-41 VCC-46 VCC-52V
V
CC
25mV
10/37Doc ID 022480 Rev 4
VND5E160ASO-EElectrical specifications
T able 9.Current sense (8 V < VCC<18V)
SymbolPa rameterTest conditionsMin. Typ. Max. Unit
I
K
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
I
0
1
OUT/ISENSE
I
OUT/ISENSE
Current sense ratio
(1)
drift
I
2
OUT/ISENSE
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense
leakage current
Open-load on-state
current detection
threshold
= 0.025 A; V
OUT
=0V; Tj= -40°C...150°C
V
CSD
I
= 0.35 A; V
OUT
=0V;
V
CSD
= -40°C...150°C
T
j
T
= 25°C...150°C
j
I
= 0.35 A; V
OUT
=0V; Tj= -40°C to 150°C
V
CSD
I
=0.5A; V
OUT
T
= -40°C...150°C
j
= 25°C...150°C
T
j
= 0.5 A; V
I
OUT
V
=0V; Tj= -40°C to 150°C
CSD
I
=1.5A; V
OUT
SENSE
SENSE
SENSE
SENSE
SENSE
Tj= -40°C...150°C
T
= 25°C...150°C
j
I
=1.5A; V
OUT
= -40°C to 150°C
T
j
=0A; V
I
OUT
V
=0V; Tj= -40°C...150°C
IN
=0A; V
I
OUT
=5V; Tj= -40°C...150°C
V
IN
I
=0.6A; V
OUT
=5V; Tj= -40°C...150°C
V
IN
SENSE
SENSE
SENSE
SENSE
VIN=5V; 8V<VCC<18V;
=5µA
I
SENSE
SENSE
=4V; V
=4 V;
=4V; V
=4V; V
=0V; V
=0V; V
=0V; V
=0.5V;
=0.5V;
=0.5V;
CSD
CSD
CSD
CSD
CSD
CSD
=0V;
=0V;
=0V;
=5V;
=0V;
=5V;
270 520730
345
470
610
370
470
540
-1313%
370
460
550
390
460
510
-88%
400
430
470
410
430
460
-44%
01µA
02µA
01µA
15mA
V
SENSE
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
Max analog
senseoutput
voltage
Analog sense
(2)
output voltage in
fault condition
Analog sense
(2)
output current in
fault condition
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
I
OUT
V
CC
V
CC
V
SENSE
I
SENSE
= 1.5 A; V
=13V; R
=13V; V
<4V; 0.08A<I
= 90% of I
=0V5V
CSD
=3.9KΩ8V
SENSE
=5V9mA
SENSE
<1.5A;
OUT
SENSE max
40100µs
(see Figure 4)
V
SENSE
I
SENSE
<4V; 0.08A<I
= 10% of I
SENSE max
OUT
<1.5A;
520µs
(see Figure 4)
Doc ID 022480 Rev 411/37
Electrical specificationsVND5E160ASO-E
T able 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolPa rameterTest conditionsMin. Typ. Max. Unit
t
DSENSE2H
Delay response
time from rising
edge of INPUT pin
V
I
(see Figure 4)
SENSE
SENSE
= 90% of I
<4V; 0.08A<I
SENSE max
OUT
<1.5A;
30150µs
Delay response
SENSE
SENSE
= 90% of I
OUT
OUTMAX
<4V;
= 90% of I
SENSEMAX
OUTMAX
;
= 1.5 A (see Figure 7)
;
110µs
Δt
DSENSE2H
time between rising
edge of output
current and rising
edge of current
V
I
I
I
sense
SENSE
SENSE
= 10% of I
<4V; 0.08A<I
SENSE max
Delay response
t
DSENSE2L
time from falling
edge of INPUT pin
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10.Open-load detection (8 V < VCC<18V)
V
I
(see Figure 4)
OUT
<1.5A;
80250µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
Open-load off-state
V
OL
voltage detection
V
=0V2
IN
threshold
See
Figure 5
4V
Output short circuit to
t
DSTKON
V
detection delay at
CC
See Figure 51801200µs
turn Off
I
L(off2)r
I
L(off2)f
Off-state output current
at V
OUT
=4V
Off-state output current
OUT
=2V
at V
=0V; V
V
V
IN
OUT
SENSE
rising from 0 V to 4 V
VIN=0V;
V
SENSE=VSENSEH
falling from VCC to 2 V
Delay response from
=4 V; VIN=0V;
td_vol
output rising edge to
SENSE
rising edge in
V
V
OUT
V
SENSE
= 90% of V
open-load
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
t
DSENSE1L
=0V;
; V
OUT
SENSEH
-1200µA
-5090µA
t
DSENSE1H
t
DSENSE2L
20µs
12/37Doc ID 022480 Rev 4
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