Double channel high side driver with analog current sense
Features
Max transient supply voltageV
Operating voltage rangeV
Max On-state resistance (per ch.)R
Current limitation (typ.)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off state openload detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Over-temperature shutdown with
autorestart (thermal shutdown)
CC
CC
ON
LIMH
S
4.5 to 28V
41 V
160 mΩ
10 A
(1)
2 µA
VND5E160AJ-E
for automotive applications
PowerSSO-12
– Reverse battery protected (see Application
schematic)
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E160AJ-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-12 package. The VND5E160AJ-E is
designed to drive 12V automotive grounded loads
delivering protection, diagnostics and easy 3V
and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with
auto-restart and over-voltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Ehnanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication, overtemperature indication, short-circuit to Vcc
diagnosis and ON & OFF state open load
detection. The current sensing and diagnostic
feedback of the whole device can be disabled by
pulling the CS_DIS pin high to allow sharing of
the external sense resistor with other similar
devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
- I
I
-I
CSENSE
V
CSENSE
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
OUT
Reverse DC output current 6A
OUT
I
DC input current -1 to 10mA
IN
DC current sense disable input current -1 to 10mA
CSD
DC reverse CS pin current 200mA
Current sense maximum voltage
VCC-41
+V
CC
V
V
7/37
Electrical specificationsVND5E160AJ-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
E
Maximum switching energy (single pulse)
MAX
(L=12mH; R
Electrostatic discharge (Human Body Model: R=1.5KΩ;
C=100pF)
- INPUT
V
- CURRENT SENSE
ESD
- CS_DIS
- OUTPUT
- V
CC
V
T
Charge device model (CDM-AEC-Q100-011)750V
ESD
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150 °C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
Thermal resistance junction-case (With one channel ON)8°C/W
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
= 1A; Tj= 25°C
OUT
On state resistance
ON
Clamp voltageIS= 20 mA414652V
clamp
I
Supply current
S
Off state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
(1)
= 1A; Tj= 150°C
I
OUT
I
= 1A; VCC= 5V; Tj= 25°C
OUT
Off State; V
VIN=V
OUT=VSENSE=VCSD
On State; V
VIN=V
OUT
V
IN=VOUT
-I
= 0.6A; Tj=150°C0.7V
OUT
= 13V; Tj= 25°C;
CC
=0V
=13V; VIN=5V; I
CC
OUT
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C
=0A
000.013
0.5V
160
320
210
(2)
(2)
5
2
3
6µAmA
5
Table 6.Switching (VCC=13V, Tj=25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
mΩ
mΩ
mΩ
µA
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn- On delay time RL= 13Ω (see Figure 6.)10 µs
Turn- Off delay time RL= 13Ω (see Figure 6.)15 µs
Turn- On voltage
/dt)
on
slope
Turn- Off voltage
/dt)
off
slope
Switching energy
losses during twon
Switching energy
losses during t
woff
= 13Ω
R
L
R
= 13Ω
L
RL= 13Ω (see Figure 6.)0.03 mJ
RL= 13Ω (see Figure 6.)0.02 mJ
See
Figure 26.
See
Figure 28.
V/µs
V/µs
9/37
Electrical specificationsVND5E160AJ-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
IN
= -1mA
I
IN
= 1mA
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
= 0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
= 2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
(1)
I
CSD
I
CSD
= 1mA
= -1mA
5.5
-0.7
7V
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
DC short circuit current
VCC= 13V
5V<VCC<28V
7101414A
V
V
A
= 13V;
I
T
T
T
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Short circuit current
limL
during thermal cycling
Shutdown temperature150175200°C
TSD
Reset temperatureTRS + 1 TRS + 5°C
T
R
Thermal reset of STATUS135°C
RS
Thermal hysteresis
HYST
(T
Turn-Off output voltage
clamp
TSD-TR
)
I
OUT
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
V
CC
TR<Tj<T
TSD
2.5A
7°C
= 1A; VIN= 0; L= 20mH VCC-41 VCC-46 VCC-52V
I
= 0.03A;
OUT
= -40°C...150°C
T
j
25mV
(see Figure 8.)
10/37
VND5E160AJ-EElectrical specifications
Table 9.Current sense (8V<VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
K
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
I
0
1
OUT/ISENSE
I
OUT/ISENSE
Current sense ratio
(1)
drift
I
2
OUT/ISENSE
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense
leakage current
Openload ON state
current detection
threshold
= 0.025A; V
OUT
Tj= -40°C...150°C270 520730
I
= 0.35A; V
OUT
Tj= -40°C...150°C
=0.35A; V
I
OUT
= 25°C...150°C
T
j
= 0.35A; V
I
OUT
=0V;
V
CSD
SENSE
TJ= -40 °C to 150 °C
I
= 0.5A; V
OUT
SENSE
Tj= -40°C...150°C
= 0.5A; V
I
OUT
= 25°C...150°C
T
j
= 0.5 A; V
I
OUT
= 0V;
V
CSD
= -40 °C to 150 °C
T
J
I
= 1.5A; V
OUT
= -40°C...150°C
T
j
I
=1.5A; V
OUT
= 25°C...150°C
T
j
= 1.5 A; V
I
OUT
=0V;
V
CSD
= -40 °C to 150 °C
T
J
I
=0A; V
OUT
=5V; VIN=0V; Tj=-40°C...150°C
V
CSD
V
=0V; VIN=5V; Tj=-40°C...150°C
CSD
I
=0.6A; V
OUT
V
=5V; VIN=5V; Tj= -40°C...150°C
CSD
V
= 5V, 8V<VCC<18V
IN
I
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
= 5 µA
SENSE
SENSE
SENSE
=0V;
= 0.5V; V
=0.5V; V
=0.5V; V
= 0.5V;
= 4V; V
= 4V; V
= 4 V;
=4V; V
=4V; V
= 4 V;
=0V;
CSD
CSD
CSD
CSD
CSD
CSD
=0V;
=0V;
CSD
=0V;
=0V;
= 0V;
= 0V;
=0V;
345
370
-1313%
370
390
-88%
400
410
-44%
0
0
0
15mA
470
470
460
460
430
430
610
540
550
510
470
460
1
2
1
µA
µA
µA
V
SENSE
V
SENSEH
I
SENSEH
Max analog
senseoutput
voltage
Analog sense
(2)
output voltage in
fault condition
Analog sense
(2)
output current in
fault condition
I
=1.5A; V
OUT
VCC=13V; R
VCC=13V; V
=0V; 5V
CSD
= 3.9KΩ;8V
SENSE
= 5V;9mA
SENSE
11/37
Electrical specificationsVND5E160AJ-E
Table 9.Current sense (8V<VCC<18V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
Delay response
time from rising
edge of INPUT pin
<4V, 0.08A<Iout<1.5A
V
SENSE
I
=90% of I
SENSE
(see Figure 4.)
<4V, 0.08A<Iout<1.5A
V
SENSE
=10% of I
I
SENSE
(see Figure 4.)
<4V, 0.08A<Iout<1.5A
V
SENSE
I
=90% of I
SENSE
(see Figure 4.)
SENSE max
SENSE max
SENSE max
40100µs
520µs
30150µs
Delay response
time between rising
∆t
DSENSE2H
edge of output
current and rising
edge of current
sense
Delay response
t
DSENSE2L
time from falling
edge of INPUT pin
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open load OFF state detection.
Table 10.Openload detection (8V<VCC<18V)
V
I
SENSE
I
OUT
I
OUTMAX
V
I
SENSE
(see Figure 4.)
<4V,
SENSE
=90% of I
= 90% of I
OUTMAX
= 1.5A (see Figure 7)
<4V, 0.08A<Iout<1.5A
SENSE
=10% of I
SENSEMAX,
SENSE max
80250µs
110µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
Openload Off state
V
OL
voltage detection
VIN = 0 V2
threshold
See
Figure 5
4V
Output short circuit to
t
DSTKON
VCC detection delay at
See Figure 51801200µs
turn Off
I
L(off2)r
I
L(off2)f
Off state output current
at V
OUT
= 4V
Off state output current
at V
OUT
= 2V
=0V; V
V
IN
rising from 0V to 4V
V
OUT
=0V; V
V
IN
V
falling from VCC to 2V
OUT
=0V
SENSE
SENSE=VSENSEH
-1200µA
-5090µA
Delay response from
= 4 V; VIN= 0V
V
OUT
V
SENSE
= 90% of V
SENSEH
20µs
td_vol
output rising edge to
SENSE
rising edge in
V
open-load
12/37
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