Double-channel high-side driver with analog current sense
Features
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliance with European directive
2002/95/EC
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High-precision current sense for wide
currents range
– Current sense disable
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E050MCJ-E and VND5E050MCK-E
are double channel high-side drivers
manufactured using ST proprietary VIPower
M0-5 technology and housed in PowerSSO-12
and PowerSSO-24 packages. The devices are
designed to drive 12 V automotive grounded
loads, and to provide protection and diagnostics.
They also implement a 3 V and 5 V CMOScompatible interface for the use with any
microcontroller.
The devices integrate advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel providing enhanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication and overtemperature
indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to share the external sense
resistor with similar devices.
Stressing the device above the rating listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability.
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
2. Special characteristic according to ISO/TS 16949.
Table 9.Current sense (8 V < V
(2)
DEMAG
V
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
1. Channel 2 has the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
D
ld
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication of how to resize the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power dissipation in R
Equation 1
≤ 600 mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
GND
)
)
(when VCC < 0: during reverse battery situations) is:
PD = (-VCC)2 / R
GND
GND
GND
only)
resistor.
22/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EApplication information
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are on in case of several high-side
drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see
Section 3.1.2
).
3.1.2 Solution 2: diode (D
A resistor (R
= 1 kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD share the same diode/resistor network.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative.
ST suggests to insert a resistor (R
latching-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
if the device drives an
GND
) in line to prevent the microcontroller I/O pins from
The current sense pin performs a double function (see
diagnostic
●Current mirror of the load current in normal operation, delivering a current
):
proportional to the load current according to a known ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in
Table 9: Current sense (8 V < V
Figure 30: Current sense and
.
X
by means of an
SENSE
is ensured up to 5 V
SENSE
OUT
and V
CC
< 18 V)
). The
current sense accuracy depends on the output current (refer to current sense electrical
characteristics
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
Tr u t h t a bl e
Table 9: Current sense (8 V < V
SENSEH
in case of the following fault conditions (refer to
):
CC
< 18 V)
).
SENSEH
up to a
Table 10:
–Power limitation activation
–Overtemperature
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high-impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
Figure 30. Current sense and diagnostic
V
BAT
V
CC
41V
Overtemperature
Pwr_Lim
CS_DIS
I
OUT/KX
I
SENSEH
V
SENSEH
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
V
SENSE
Main MOSn
GND
OUTn
Load
24/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EApplication information
3.5 Maximum demagnetization energy (VCC = 13.5 V)
Figure 31. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A: T
B: T
C: T
V
, I
IN
= 150 °C single pulse
jstart
= 100 °C repetitive pulse
jstart
= 125 °C repetitive pulse
jstart
L
DemagnetizationDemagnetizationDemagnetization
t
1. Values are generated with RL = 0 Ω.In case of repetitive pulses, T
demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
(at the beginning of each
jstart
Doc ID 022514 Rev 125/40
Package and PCB thermal dataVND5E050MCJ-E, VND5E050MCK-E
4 Package and PCB thermal data
4.1 PowerSSO-12 thermal data
Figure 32. PowerSSO-12 PC board
1. Layout condition of Rth and Zth measurements (PCB: double layer, thermal vias,
FR4 area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back side), copper
areas: from minimum pad lay-out to 8 cm
2
).
Figure 33. R
thj-amb
on)
RTHj _amb(°C/ W)
70
65
60
55
50
45
40
35
30
0246810
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^ 2)
26/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EPackage and PCB thermal data
Figure 34. PowerSSO-12 thermal impedance junction ambient single pulse (one
channel on)
ZTH (° C/ W)
100
Footprint
2 cm
8 cm
2
2
10
1
0,1
0,00010,0010,010,11101001000
Time ( s)
Equation 3: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1 δ–()+⋅=
where δ = tP/T
Figure 35. Thermal fitting model of a double-channel HSD in PowerSSO-12
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 022514 Rev 127/40
Package and PCB thermal dataVND5E050MCJ-E, VND5E050MCK-E
Table 14.Thermal parameters
Area/island (cm2)Footprint28
R1=R7 (°C/W)0.7
R2=R8 (°C/W)2.8
R3 (°C/W)4
R4 (°C/W)887
R5 (°C/W)221510
R6 (°C/W)262015
C1=C7 (W.s/°C)0.001
C2=C8 (W.s/°C)0.0025
C3 (W.s/°C)0.05
C4 (W.s/°C)0.20.10.1
C5 (W.s/°C)0.270.81
C6 (W.s/°C)369
28/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EPackage and PCB thermal data
4.2 PowerSSO-24 thermal data
Figure 36. PowerSSO-24 PC board
1. Layout condition of Rth and Zth measurements (PCB: double layer, Thermal vias,
FR4 area = 77 mm x 86 mm, PCB thickness =1.6 mm, Cu thickness =70 µm (front and back side), Copper
areas: from minimum pad lay-out to 8 cm
2
).
Figure 37. R
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
thj-amb
on)
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^2)
Doc ID 022514 Rev 129/40
Package and PCB thermal dataVND5E050MCJ-E, VND5E050MCK-E
Figure 38. PowerSSO-24 thermal impedance junction ambient single pulse (one
channel on)
Equation 4: pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1 δ–()+⋅=
where δ = tP/T
Figure 39. Thermal fitting model of a double-channel HSD in PowerSSO-24
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
30/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EPackage and PCB thermal data
Table 15.Thermal parameters
Area / island (cm2)Footprint 2 8
R1 = R7 (°C/W)0.4
R2 = R8 (°C/W)2
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
C1 = C7 (W.s/°C)0.001
C2 = C8 (W.s/°C)0.0022
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
Doc ID 022514 Rev 131/40
Package and packing informationVND5E050MCJ-E, VND5E050MCK-E
5 Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-12package information
Figure 40. PowerSSO-12 package dimensions
.
32/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EPackage and packing information
Table 16.PowerSSO-12 mechanical data
Symbol
Min.Typ.Max.
A1.251.62
A100.1
A21.101.65
B0.230.41
C0.190.25
D4.85.0
E3.84.0
e0.8
H5.86.2
h0.250.5
L0.41.27
Millimeters
k0°8°
X1.92.5
Y3.64.2
ddd0.1
Doc ID 022514 Rev 133/40
Package and packing informationVND5E050MCJ-E, VND5E050MCK-E
5.3 PowerSSO-24 package information
Figure 41. PowerSSO-24 package dimensions
34/40 Doc ID 022514 Rev 1
VND5E050MCJ-E, VND5E050MCK-EPackage and packing information
Table 17.PowerSSO-24 mechanical data
Symbol
Min.Typ.Max.
A2.152.47
A22.152.40
a100.075
b0.330.51
c0.230.32
D10.1010.50
E7.47.6
e0.8
e38.8
G0.1
G10.06
Millimeters
H10.110.5
h0.4
L0.550.85
N10deg
X4.14.7
Y6.57.1
Doc ID 022514 Rev 135/40
Package and packing informationVND5E050MCJ-E, VND5E050MCK-E
5.4 PowerSSO-12 packing information
Figure 42. PowerSSO-12 tube shipment (no suffix)
B
A
C
Figure 43. PowerSSO-12 tape and reel shipment (suffix “TR”)
Base q.ty100
Bulk q.ty2000
Tube length (± 0.5)532
A1.85
B6.75
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base q.ty2500
Bulk q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
Tape dimensions
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(EIA) Standard 481 rev. A, Feb. 1986
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