Double channel high-side driver with analog current sense
for automotive applications
Datasheet − production data
Max transient supply voltageV
Operating voltage rangeVCC4.5 to 28 V
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
CC
ON
LIMH
S
41 V
50 mΩ
27 A
(1)
2 µA
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
– AEC-Q100 qualified
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E050ASO-E is a double channel highside driver manufactured using ST proprietary
VIPower
SO-16L package. The device is designed to drive
12 V automotive grounded loads, and to provide
protection and diagnostics. It also implements a
3 V and 5 V CMOS-compatible interface for the
use with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel providing enhanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication, overtemperature
indication, short-circuit to V
state and off-state open-load detection. The
current sensing and diagnostic feedback of the
whole device can be disabled by pulling the
CS_DIS pin high to share the external sense
resistor with similar devices.
®
M0-5 technology and housed in
diagnosis and on-
CC
June 2012Doc ID 022473 Rev 41/37
This is information on a product in full production.
Stressing the device above the rating listed in Table 3: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
I
-I
I
CC
GND
OUT
OUT
I
IN
CSD
DC supply voltage 41V
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 20A
DC input current -1 to 10mA
DC current sense disable input current -1 to 10mA
-I
CSENSE
V
CSENSE
DC reverse CS pin current 200mA
- 41 to
V
Current sense maximum voltage
CC
+V
CC
V
Doc ID 022473 Rev 47/37
Electrical specificationsVND5E050ASO-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
V
V
MAX
ESD
ESD
(L = 3 mH; R
I
OUT=IlimL
=0Ω; V
L
(Typ.))
=13.5V; T
bat
jstart
=150°C;
Electrostatic discharge
(human body model: R = 1.5 KΩ; C=100pF)
– Input
– Current sense
–CS_DIS
–Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
104mJ
4000
2000
4000
5000
5000
V
V
V
V
V
T
T
stg
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
2.2 Thermal data
Table 4.Thermal data
SymbolParameterTypical valueUnit
R
th j-pcb
R
thj-amb
1. The measure is done in accordance with the JESD 51-8.
Thermal resistance junction-pcb (with one channel
(1)
ON)
Thermal resistance junction-ambient See Figure 36°C/W
2.3 Electrical characteristics
Values specified in this section are for 8 V<VCC<28V; -40°C<Tj<150 °C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
20°C/W
V
V
V
USDhyst
R
V
clamp
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
=2A; Tj=25°C50
OUT
On-state resistance
ON
(1)
=2A; Tj= 150°C100
OUT
I
=2A; VCC=5V; Tj= 25°C65
OUT
Clamp voltageIS=20mA414652V
8/37Doc ID 022473 Rev 4
0.5V
mΩI
VND5E050ASO-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Off-state; V
V
I
S
Supply current
IN=VOUT=VSENSE=VCSD
On-state; V
I
=0A
OUT
VIN=V
=25°C
T
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj= 25°C)
Off-state output current
(1)
Output - VCC diode
V
F
voltage
(1)
j
VIN=V
=125°C
T
j
-I
=4A; Tj= 150°C0.7V
OUT
=13V; Tj= 25°C;
CC
=13V; VIN=5V;
CC
=0V; VCC=13V;
OUT
=0V; VCC=13V;
OUT
=0V
(2)5(2)
2
36mA
00.013
05
SymbolParameterTest conditionsMin.Typ.Max. Unit
Turn-on delay time RL=6.5Ω (see Figure 6)—20— µs
Turn-off delay time RL=6.5Ω (see Figure 6)—45— µs
/dt
Turn-on voltage slopeRL=6.5Ω —
(on)
/dt
Turn-off voltage slopeRL=6.5Ω —
(off)
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL=6.5Ω (see Figure 6)— 0.15 — mJ
RL=6.5Ω (see Figure 6)—0.3— mJ
See
Figure 26
See
Figure 28
—V/µs
—V/µs
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
µA
µA
Table 7.Logic inputs
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
I
IH
ICL
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25V
I
=1mA5.57
Input clamp voltage
IN
IIN=-1mA-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
Doc ID 022473 Rev 49/37
V
Electrical specificationsVND5E050ASO-E
Table 7.Logic inputs (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
=1mA5.57
CS_DIS clamp voltage
CSD
I
=-1mA-0.7
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13 V192738A
I
limH
I
limL
T
TSD
T
T
T
HYST
V
DEMAG
RS
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperatureTRS+1TRS+5°C
R
Thermal reset of status135°C
Thermal hysteresis
TSD -TR
)
(T
Turn-off output voltage
clamp
CC
5V < V
<28V38A
CC
VCC=13V;
T
R<Tj<TTSD
I
=2A; VIN=0;
OUT
L=6mH
7A
7°C
-41 VCC-46 VCC-52V
V
CC
V
I
=0.1A;
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
T able 9.Current sense (8 V < VCC<18V)
Output voltage drop
limitation
OUT
T
= -40°C...+150°C
j
(see Figure 8)
25mV
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
K
0
K
1
1/K1
K
2
I
OUT/ISENSE
I
OUT/ISENSE
Current sense ratio
(1)
drift
I
OUT/ISENSE
= 0.05 A; V
OUT
=0V; Tj= -40°C...150°C
V
CSD
I
=1A; V
OUT
V
CSD
= -40°C...150°C
T
j
SENSE
=0V;
Tj= 25°C...150°C
I
=1A; V
OUT
V
CSD
SENSE
=0V;
TJ= -40 °C to 150 °C
I
=2A; V
OUT
V
CSD
T
= -40°C...150°C
j
= 25°C...150°C
T
j
SENSE
=0V;
SENSE
=4V;
=4V;
=4V;
=0.5V;
1440 2250 3630
1740
2070
2820
1750
2070
2562
-1515%
1900
2000
2395
1899
2000
2282
10/37Doc ID 022473 Rev 4
VND5E050ASO-EElectrical specifications
T able 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
Current sense ratio
(1)
drift
I
3
OUT/ISENSE
Current sense ratio
(1)
drift
Analog sense leakage
current
Open load on-state
current detection
threshold
=2 A; V
OUT
=0V;
V
CSD
TJ= -40 °C to 150 °C
I
=4A;
OUT
V
T
T
I
V
=4V;V
SENSE
= -40°C...150°C
j
= 25°C...150°C
j
=4 A; V
OUT
=0V;
CSD
TJ= -40 °C to 150 °C
I
=0A; V
OUT
V
=5V; VIN=0V;
CSD
= -40°C...150°C
T
j
I
=0A; V
OUT
=0V; VIN=5V;
V
CSD
T
= -40°C...150°C
j
=2A; V
I
OUT
=5V; VIN=5V;
V
CSD
T
= -40°C...150°C
j
V
=5V; 8V<VCC<18V;
IN
I
=5µA
SENSE
SENSE
CSD
SENSE
SENSE
SENSE
SENSE
=4 V;
=0V;
=4 V;
=0V;
=0V;
=0V;
-99%
1969
1990
2210
1950
1990
2153
-66%
01
02
µA
01
420mA
V
SENSE
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Max analog sense
output voltage
Analog sense output
voltage in fault
condition
(2)
Analog sense output
current in fault
condition
(2)
Delay response time
from falling edge of
CS_DIS pin
Delay response time
from rising edge of
CS_DIS pin
Delay response time
from rising edge of
INPUT pin
=4A; V
I
OUT
VCC=13V; R
VCC=13V; V
SENSE
SENSE
<4V; 0.5A<I
= 90% of I
V
I
(see Figure 4)
SENSE
SENSE
<4V; 0.5A<I
= 10% of I
V
I
(see Figure 4)
V
I
SENSE
SENSE
<4V; 0.5A<I
= 90% of I
(see Figure 4)
=0V5V
CSD
=3.9KΩ8V
SENSE
=5V9mA
SENSE
<4A;
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
<4A;
<4A;
40100µs
520µs
80250µs
Doc ID 022473 Rev 411/37
Electrical specificationsVND5E050ASO-E
T able 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Delay response time
between rising edge of
Δt
DSENSE2H
output current and
rising edge of current
sense
Delay response time
t
DSENSE2L
from falling edge of
INPUT pin
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10.Open load detection (8 V < VCC<18V)
V
I
I
I
V
I
(see Figure 4)
SENSE
SENSE
= 90% of I
OUT
OUTMAX
SENSE
SENSE
= 90% of I
=10% of I
<4V;
SENSEMAX,
OUTMAX
=2A (see Figure 7)
<4V; 0.5A<I
OUT
SENSEMAX
40µs
<4A;
80250µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
Open load off-state
V
OL
voltage detection
=0V2
V
IN
threshold
See
Figure 5
4V
Output short circuit to
t
DSTKON
detection delay at
V
CC
See Figure 51801200 µs
turn-off
I
L(off2)r
I
L(off2)f
Off-state output current
OUT
=4V
at V
Off-state output current
at V
OUT
=2V
V
=0V; V
V
V
V
IN
OUT
IN
OUT
SENSE
rising from 0 V to 4 V
=0V; V
SENSE=VSENSEH
falling from VCC to 2 V
=0V;
-1200µA
;
-5090µA
Delay response from
td_vol
output rising edge to
V
SENSE
rising edge in
=4 V; VIN=0V;
V
OUT
V
SENSE
= 90% of V
SENSEH
20µs
open load
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSE2H
12/37Doc ID 022473 Rev 4
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
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