Double-channel high-side driver with analog current sense
for automotive applications
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28 V
25 mΩ
2µA
– Inrush current active management by
power limitation
– Very low standby current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with auto
restart (thermal shutdown)
41 V
60 A
(1)
Powe rSSO- 24
– Reverse battery protected (see Figure 29:
Application schematic
(1)
)
– Electrostatic discharge protection
Applications
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E025MK-E is a double-channel highside drivers manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny PowerSSO-24 package.
The VND5E025MK-E is designed to drive 12V
automotive grounded loads delivering protection,
diagnostics and easy 3V and 5V CMOS
compatible interface with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground through power limitation indication and
overtemperature indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Figure 31.Maximum turn-off current versus inductance (for each channel)
Figure 32.PowerSSO-24 PC board
(1)
Figure 33.Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 27
Figure 34.PowerSSO-24 thermal impedance junction to ambient single pulse (one channel ON). . . 28
Figure 35.Thermal fitting model of a double-channel HSD in PowerSSO-24
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
GND
(1)
V
CC
OUTPUT1
CURRENT
SENSE1
OUTPUT2
CURRENT
SENSE2
I
GND
I
OUT1
I
SENSE1
I
OUT2
I
SENSE2
V
SENSE2
V
I
S
OUT2
V
SENSE1
V
Fn
V
OUT1
V
CC
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
- I
OUT
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
CC
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
IN
-1 to 10
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
CC
V
A
mAI
V
Maximum switching energy (single pulse)
E
MAX
(L = 0.8 mH; R
= I
I
OUT
limL
(Typ.))
=0Ω; V
L
=13.5V; T
bat
jstart
= 150°C;
140mJ
Doc ID 16471 Rev 17/35
Electrical specificationVND5E025MK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R = 1.5kΩ; C = 100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
– INPUT
– CURRENT SENSE
–CS_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150
j
Storage temperature- 55 to 150
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)1.35
°C/W
Thermal resistance junction-ambient See Figure 33
8/35Doc ID 16471 Rev 1
VND5E025MK-EElectrical specification
2.3 Electrical characteristics
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
USDhyst
R
V
clamp
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
I
Supply current
S
Off-state output
(1)
current
Output - VCC diode
V
F
voltage
(1)
I
=3A; Tj= 25°C25
OUT
(1)
=3A; Tj= 150°C50
OUT
=3A; VCC=5V; Tj= 25°C35
I
OUT
Off-state; V
VIN=V
OUT=VSENSE=VCSD
=13V; Tj=25°C;
CC
On-state; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
= 25°C
T
j
V
IN=VOUT
=0V; VCC=13V;
OUT
=0V; VCC=13V;
Tj= 125°C
-I
=4 A; Tj=150°C0.7V
OUT
=0V
4.51328
VV
0.5
mΩI
(2)
2
(2)
5
µA
36mA
00.013
µA
05
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditions Min.Typ.Max. Unit
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slope
OUT
/dt)
(dV
OUT
W
ON
W
OFF
Turn-on delay time
Turn-off delay time40
Turn-off voltage slope
off
R
=4.3 Ω
L
(see Figure 5)
=4.3 Ω
R
L
Switching energy losses
during t
Switching energy losses
during t
ON
W
RL=4.3 Ω
(see Figure 5)
OFF
W
20
See
Figure 24
See
Figure 25
0.6
0.35
Doc ID 16471 Rev 19/35
µs
V/µs
mJ
Electrical specificationVND5E025MK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
I
=1mA5.57
Input clamp voltage
IN
I
= -1mA-0.7
IN
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
I
=1mA5.57
CS_DIS clamp voltage
CSD
= -1mA-0.7
I
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13V4360
I
LIMH
I
LIML
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200
Reset temperatureTRS+1 TRS+5
R
Thermal reset of STATUS135
Thermal hysteresis
(T
TSD-TR
)
Turn-Off output voltage
clamp
Output voltage drop
limitation
CC
5V < V
CC
< 28V
VCC= 13V;
TR<Tj<T
I
OUT
TSD
=2A; VIN=0;
L=6 mH
=0.1A;
I
OUT
= -40°C to +150°C
T
j
(see Figure 6)
15
7
-41 VCC-46 VCC-52 V
V
CC
25mV
85
VV
V
A
°C
10/35Doc ID 16471 Rev 1
VND5E025MK-EElectrical specification
Table 9.Current sense (8V < VCC< 18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
K
LED
K
K
1/K1
K
= 0.05A; V
I
OUT/ISENSE
0
1
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
(1)
ratio drift
2
I
OUT/ISENSE
OUT
Tj= -40°C to 150°C
I
=0.5A; V
OUT
= -40°C to 150°C
T
j
I
=2 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj= -40°C to 150°C
= 25°C to 150°C
T
j
=2 A; V
I
OUT
V
CSD
= -40°C to 150°C
T
j
I
=3 A; V
OUT
V
CSD
= -40°C to 150°C
T
j
SENSE
=0V;
SENSE
=0V;
Tj= 25°C to150°C
SENSE
=0.5V; V
=0.5V; V
=4 V;
=4 V;
=4V;
CSD
CSD
=0V;
=0V;
1240 3350 4960
1860 3150 4600
2100
3100
4400
2250
3100
3850
-1313%
2200
3000
4100
2450
3000
3550
dK
2/K2
K
dK
3/K3
I
SENSE
I
OL
V
SENSE
V
SENSEH
I
SENSEH
=3 A; V
Current sense
(1)
ratio drift
3
I
OUT/ISENSE
Current sense
(1)
ratio drift
Analog sense
0
leakage current
I
OUT
Tj= -40°C to 150°C
I
=10 A; V
OUT
V
=0V;
CSD
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
=10 A; V
I
OUT
= -40°C to 150°C
T
j
I
=0A; V
OUT
=5V; VIN=0V; Tj= -40°C to 150°C
V
CSD
V
=0V; VIN=5V; Tj= -40°C to 150°C
CSD
I
=2A; V
OUT
V
=5V; VIN=5V; Tj= -40°C to 150°C
CSD
SENSE
SENSE
SENSE
SENSE
SENSE
=4V; V
=4V;
=4V; V
=0V;
=0V;
CSD
CSD
=0V;
=0V;
-1212%
2550
2850
3280
2650
2850
3180
-6+6%
0
0
0
1
2
1
µA
µA
µA
Open-load on-
= 5V, 8V<VCC<18V
state current
detection
threshold
V
IN
I
SENSE
= 5 µA
530mA
Max analog
sense output
I
OUT
=3 A; V
=0V 5
CSD
voltage
V
Analog sense
output voltage in
fault condition
VCC= 13V; R
(2)
=3.9kΩ8
SENSE
Analog sense
output current in
fault condition
VCC= 13V; V
(2)
=5V9mA
SENSE
Doc ID 16471 Rev 111/35
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