Double channel high side driver with analog current sense
for automotive applications
Max transient supply voltageV
Operating voltage rangeV
Max On-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28 V
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E025LK-E is a double channel highside drivers manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package. The VND5E025LK-E is
designed to drive 12V automotive grounded loads
delivering protection, diagnostics and easy 3V
and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with
auto-restart and over-voltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Ehnanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication, overtemperature indication, short-circuit to Vcc
diagnosis and ON & OFF state open load
detection. The current sensing and diagnostic
feedback of the whole device can be disabled by
pulling the CS_DIS pin high to allow sharing of
the external sense resistor with other similar
devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
- I
OUT
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
CC
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
IN
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
-1 to 10
CC
V
A
mAI
V
7/37
Electrical specificationVND5E025LK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = TBD; R
= I
I
OUT
limL
=0Ω; V
L
(Typ.) )
= 13.5V; T
bat
jstart
= 150°C;
70mJ
Electrostatic discharge
(human body model: R = 1.5 kΩ; C = 100 pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150
j
Storage temperature- 55 to 150
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)1.35
°C/W
Thermal resistance junction-ambient See Figure 36
8/37
VND5E025LK-EElectrical specification
2.3 Electrical characteristics
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
USDhyst
R
V
clamp
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
On state resistance
ON
Clamp voltageIS= 20 mA414652V
I
Supply current
S
Off state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
I
=3A; Tj= 25°C25
OUT
(1)
=3A; Tj= 150°C50
OUT
=3A; VCC=5V; Tj= 25°C35
I
OUT
Off State; V
VIN=V
OUT=VSENSE=VCSD
=13V; Tj= 25°C;
CC
On State; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
= 25°C
T
j
V
IN=VOUT
=0V; VCC=13V;
OUT
=0V; VCC=13V;
Tj= 125°C
-I
=4 A; Tj=150°C0.7V
OUT
=0V
4.51328
VV
0.5
mΩI
(2)
2
(2)
5
µA
36mA
00.013
µA
05
Table 6.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditions Min.Typ.Max. Unit
Turn-on delay time
Turn-off delay time40
/dt)onTurn-on voltage slope
/dt)
Turn-off voltage slopeSee Figure 28
off
Switching energy losses
during t
Switching energy losses
during t
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
WON
WOFF
=4.3 Ω
R
L
(see Figure 6)
=4.3 Ω
R
L
RL=4.3 Ω
(see Figure 6)
9/37
20
See Figure 27
0.6
0.35
µs
V/µs
mJ
Electrical specificationVND5E025LK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
I
=1mA5.57
Input clamp voltage
IN
I
= -1mA-0.7
IN
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
I
=1mA5.57
(1)
CSD
=-1mA-0.7
I
CSD
CS_DIS clamp voltage
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13V3042
I
LIMH
I
LIML
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200
Reset temperatureTRS+1 TRS+5
R
Thermal reset of status135
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage
clamp
Output voltage drop
limitation
CC
CC
< 28V
5V < V
VCC= 13V;
TR<Tj<T
I
=2A; VIN=0;
OUT
TSD
L=6 mH
=0.1A;
I
OUT
Tj= -40°C to +150°C
(see Figure 8)
11
7
-41 VCC-46 VCC-52 V
V
CC
25mV
60
VV
V
A
°C
10/37
VND5E025LK-EElectrical specification
Table 9.Current sense (8V < VCC< 18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
K
LED
K
K
1/K1
K
= 0.05A; V
I
OUT/ISENSE
0
1
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
(1)
ratio drift
2
I
OUT/ISENSE
OUT
Tj= -40°C to 150°C
I
=0.5A; V
OUT
= -40°C to 150°C
T
j
I
=2 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj= -40°C to 150°C
= 25°C to 150°C
T
j
=2 A; V
I
OUT
V
CSD
= -40°C to 150°C
T
j
I
=3 A; V
OUT
V
CSD
= -40°C to 150°C
T
j
SENSE
=0V;
SENSE
=0V;
Tj= 25°C to150°C
SENSE
=0.5V; V
=0.5V; V
=4 V;
=4 V;
=4V;
CSD
CSD
=0V;
=0V;
1240 3350 4960
1860 3150 4600
2100
3100
4400
2250
3100
3850
-1313%
2200
3000
4100
2450
3000
3550
dK
2/K2
K
dK
3/K3
I
SENSE
I
OL
V
SENSE
V
SENSEH
I
SENSEH
=3 A; V
Current sense
(1)
ratio drift
3
I
OUT/ISENSE
Current sense
(1)
ratio drift
Analog sense
0
leakage current
I
OUT
Tj= -40°C to 150°C
I
=10 A; V
OUT
V
=0V;
CSD
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
=10 A; V
I
OUT
= -40°C to 150°C
T
j
I
=0A; V
OUT
=5V; VIN=0V; Tj= -40°C to 150°C
V
CSD
I
=0A; V
OUT
=0V; VIN=5V; Tj= -40°C to 150°C
V
CSD
I
=2A; V
OUT
=5V; VIN=5V; Tj= -40°C to 150°C
V
CSD
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
=4V; V
=4V;
=4V; V
=0V;
=0V;
=0V;
CSD
CSD
=0V;
=0V;
-1212%
2550
2850
3280
2650
2850
3180
-6+6%
01
02
µA
01
Openload on
= 5V, 8V<VCC<18V
state current
detection
threshold
V
IN
I
SENSE
= 5 µA
530mA
Max analog
sense output
I
OUT
=3 A; V
=0V 5
CSD
voltage
V
Analog sense
output voltage in
fault condition
(1)
VCC= 13V; R
=3.9kΩ8
SENSE
Analog sense
output current in
fault condition
(2)
VCC= 13V; V
=5V9mA
SENSE
11/37
Electrical specificationVND5E025LK-E
Table 9.Current sense (8V < VCC< 18V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
Delay response
time from rising
edge of INPUT
pin
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
<10A
OUT
SENSEMAX
<10A
OUT
SENSEMAX
<10A
OUT
SENSEMAX
30100µs
520µs
80300µs
Delay response
SENSE
= 90% of I
<4V,
= 90% of I
OUTMAX
SENSEMAX,
, I
OUTMAX
=3A
Δt
DSENSE2H
time between
rising edge of
output current
and rising edge
V
I
SENSE
I
OUT
(see Figure 7)
of current sense
Delay response
t
DSENSE2L
time from falling
edge of INPUT
pin
1. Fault condition includes: power limitation, overtemperature and open load OFF state detection.
V
I
SENSE
SENSE
<4V, 0.5<I
= 10% of I
(see Figure 4)
<10A
OUT
SENSEMAX
70250µs
110µs
Table 10.Openload detection (8V < VCC<18V)
SymbolParameterTest conditionMin.Typ.Max. Unit
t
DSTKON
I
L(off2)r
I
L(off2)f
td_vol
V
Openload off state voltage
OL
detection threshold
Output short circuit to V
detection delay at turn off
Off state output current at
= 4V
V
OUT
Off state output current at
= 2V
V
OUT
=0V2
V
IN
CC
See Figure 51801200µs
=0V; V
V
IN
V
rising from 0V to 4V
OUT
=0V; V
V
IN
V
falling from VCC to 2V
OUT
=0V
SENSE
SENSE=VSENSEH
-1200µA
-5090µA
Delay response from
= 4 V; VIN= 0V
output rising edge to
SENSE
rising edge in
V
openload
V
OUT
V
SENSE
= 90% of V
SENSEH
See
Figure 5
4V
20µs
12/37
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