Double channel high-side driver with analog current sense
for automotive applications
Datasheet − production data
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28 V
– AEC-Q100 qualified
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open- load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E025AS-E is a double channel highside driver manufactured using ST proprietary
VIPower
SO-16L package. The device is designed to drive
12 V automotive grounded loads, and to provide
protection and diagnostics. It also implements a
3 V and 5 V CMOS-compatible interface for the
use with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with autorestart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, shortcircuit to V
open-load detection. The current sensing and
diagnostic feedback of the whole device can be
disabled by pulling the CS_DIS pin high to share
the external sense resistor with similar devices.
®
M0-5 technology and housed in
diagnosis and on-state and off-state
CC
June 2012Doc ID 022490 Rev 41/37
This is information on a product in full production.
Applying stress which exceeds the rating listed in Table 3: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
-I
OUT
I
CSD
-I
CSENSE
V
CSENSE
E
MAX
DC supply voltage41
CC
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
IN
-1 to 10
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
Maximum switching energy (single pulse)
(L = 0.8 mH; RL=0Ω; V
I
OUT
= I
limL
(Typ.))
Doc ID 022490 Rev 47/37
= 13.5 V; T
bat
jstart
= 150 °C;
V
A
mAI
V
CC
140mJ
Electrical specificationsVND5E025AS-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R = 1.5 kΩ; C = 100 pF)
V
V
ESD
ESD
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
T
Junction operating temperature-40 to 150
j
Storage temperature-55 to 150
stg
4000
2000
4000
5000
5000
V
V
V
V
V
°C
2.2 Thermal data
Table 4.Thermal data
SymbolParameterT yp val ueUnit
R
thj-pcb
R
thj-amb
1. The measure is done in accordance with the JESD 51-8.
Thermal resistance junction-pcb
Thermal resistance junction-ambient See Figure 36°C/W
(1)
18.5°C/W
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC< 28 V; -40°C < Tj< 150°C, unless
otherwise stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
V
USDhyst
R
V
clamp
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
I
OUT
On-state resistance
ON
(1)
OUT
I
OUT
Clamp voltageIS= 20 mA414652V
Off-state; V
V
I
S
Supply current
IN=VOUT=VSENSE=VCSD
On-state; V
I
OUT
4.51328
0.5
=3A; Tj=25°C25
=3A; Tj=150°C50
=3A; VCC=5V; Tj=25°C35
=0A
=13V; Tj=25°C;
CC
=13V; VIN=5V;
CC
=0V
(2)5(2)
2
36mA
VV
mΩI
µA
8/37Doc ID 022490 Rev 4
VND5E025AS-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max.Unit
VIN=V
= 25°C
T
I
L(off1)
1. For each channel.
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj= 25°C)
Off-state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
j
V
IN=VOUT
= 125°C
T
j
-I
OUT
=0V; VCC=13V;
OUT
=0V; VCC=13V;
00.013
05
=4 A; Tj= 150°C0.7V
SymbolParameterTest conditions Min.Typ.Max. Unit
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slope
OUT
/dt)
(dV
OUT
W
ON
W
OFF
Tu r n - o n d e l a y t i m e
Turn-off delay time—40—
Turn-off voltage slope—See Figure 28—
off
Switching energy losses
during t
Switching energy losses
during t
WON
WOFF
R
=4.3 Ω
L
(see Figure 6)
=4.3 Ω
R
L
RL=4.3 Ω
(see Figure 6)
—20—
—See Figure 27—
—0.6—
—0.35—
µA
µs
V/µs
mJ
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
I
=1mA5.57
Input clamp voltage
IN
I
=-1mA-0.7
IN
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
=1mA5.57
I
CS_DIS clamp voltage
CSD
I
=-1mA-0.7
CSD
VV
V
Doc ID 022490 Rev 49/37
Electrical specificationsVND5E025AS-E
Table 8.Protections and diagnostics
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 13 V436085A
V
I
LIMH
I
LIML
T
TSD
T
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
T able 9.Current sense (8 V < VCC<18V)
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperatureTRS+1 TRS+5°C
R
Thermal reset of STATUS135°C
Thermal hysteresis
TSD-TR
)
(T
Turn-Off output voltage
clamp
Output voltage drop
limitation
CC
5V<VCC<28V85A
VCC=13V;
T
R<Tj<TTSD
15A
7°C
I
=2A; VIN=0;
OUT
L=6 mH
=0.1A;
I
OUT
= -40°C to 150°C
T
j
VCC-41 VCC-46 VCC-52V
25mV
(see Figure 8)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
dK
K
LED
K
K
1/K1
K
2/K2
K
= 0.05 A; V
I
OUT/ISENSE
0
1
2
3
I
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
I
OUT/ISENSE
(1)
Current sense ratio drift
I
OUT/ISENSE
OUT
V
=0V; Tj= -40°C to 150°C
CSD
I
= 0.5 A; V
OUT
=0V; Tj= -40 °C to 150 °C
V
CSD
I
=2 A; V
OUT
V
=0V;
CSD
T
= -40°C to 150°C
j
T
= 25°C to 150°C
j
I
=2 A; V
OUT
=0V;
V
CSD
T
= -40°C to 150°C
j
I
=3 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
SENSE
SENSE
Tj= -40°C to 150°C
T
= 25°C to150°C
j
=3 A; V
I
OUT
V
CSD
= -40°C to 150°C
T
j
I
= 10 A; V
OUT
V
CSD
SENSE
=0V;
SENSE
=0V;
Tj= -40°C to 150°C
Tj= 25°C to 150°C
SENSE
=4 V;
=4 V;
=4V;
=4V;
=0.5V;
=0.5V;
=4V;
1240 3350 5100
1860 3150 4600
2100
3100
4400
2250
3100
3850
-1313%
2200
3000
4100
2450
3000
3550
-1212%
2550
2850
3280
2650
2850
3180
10/37Doc ID 022490 Rev 4
VND5E025AS-EElectrical specifications
T able 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
dK3/K
I
SENSE
I
OL
V
SENSE
V
SENSEH
I
SENSEH
(1)
Current sense ratio drift
3
Analog sense leakage
0
current
Open-load on-state
current detection
threshold
Max analog sense output
voltage
Analog sense output
voltage in fault
condition
(1)
Analog sense output
current in fault
condition
(2)
= 10 A; V
I
OUT
=0V; Tj= -40°C to 150°C
V
CSD
=0A; V
I
OUT
=5V; VIN=0V;
V
CSD
= -40°C to 150°C
T
j
I
=0A; V
OUT
=0V; VIN=5V;
V
CSD
= -40 °C to 150 °C
T
j
I
=2A; V
OUT
=5V; VIN=5V;
V
CSD
= -40°C to 150°C
T
j
= 5V; 8V<VCC<18V;
V
IN
I
SENSE
=3 A; V
I
OUT
VCC=13V; R
VCC=13V; V
= 5 µA
SENSE
=0V;
SENSE
=0V;
SENSE
=0V;
SENSE
=0V 5V
CSD
SENSE
SENSE
=4V;
-6+6%
01µA
02µA
01µA
530mA
=3.9kΩ8V
=5V9mA
Delay response time
t
DSENSE1H
from falling edge of
CS_DIS pin
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
Delay response time
Δt
DSENSE2H
between rising edge of
output current and rising
edge of current sense
Delay response time
t
DSENSE2L
from falling edge of
INPUT pin
1. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
=10% of I
(see Figure 4)
V
I
SENSE
SENSE
<4V, 0.5<I
= 90% of I
(see Figure 4)
V
I
SENSE
I
OUT
I
OUTMAX
V
I
SENSE
SENSE
=90% of I
=90% of I
SENSE
<4V,
=3A; (see Figure 7)
<4V, 0.5<I
=10% of I
(see Figure 4)
OUT
SENSEMAX
OUT
SENSEMAX
OUT
SENSEMAX
SENSEMAX,
OUTMAX
OUT
SENSEMAX
<10A
<10A
<10A
;
<10A
30100µs
520µs
80300µs
110µs
70250µs
Doc ID 022490 Rev 411/37
Electrical specificationsVND5E025AS-E
SENSE CURRENT
INPUT
LOAD CURRENT
CS_DIS
t
DSENSE2H
t
DSENSE2L
t
DSENSE1L
t
DSENSE1H
V
IN
V
CS
t
DSTKON
OUTPUT STUCK TO V
CC
V
OUT
> V
OL
V
SENSEH
Table 10.Open-load detection (8 V < V
SymbolParameterTest conditionMin.Typ.Max. Unit
CC
<18V)
V
t
DSTKON
I
L(off2)r
I
L(off2)f
Open-load off-state
OL
voltage detection threshold
Output short circuit to V
detection delay at turn-off
Off-state output current at
= 4V
V
OUT
Off-state output current at
V
= 2 V
OUT
VIN=0V2
CC
See Figure 51801200µs
V
=0V; V
V
V
V
IN
OUT
IN
OUT
=0V; V
SENSE
rising from 0 V to 4 V
SENSE=VSENSEH
falling from VCC to 2 V
Delay response from
td_vol
output rising edge to
V
SENSE
rising edge in
= 4 V; VIN= 0 V;
V
OUT
V
SENSE
= 90 % of V
openload
Figure 4.Current sense delay characteristics
=0V;
SENSEH
See
Figure 5
4V
-1200µA
;
-5090µA
20µs
12/37Doc ID 022490 Rev 4
Figure 5.Open-load off-state delay timing
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