Double channel high-side driver with analog current sense
for automotive applications
Max transient supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.) R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open- load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E025AK-E is a double channel highside driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-24 package. The VND5E025AK-E is
designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and an
easy 3 V and 5 V CMOS compatible interface with
any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel in order to provide enhanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication, overtemperature
indication, short-circuit to V
on-state and off-state open-load detection. The
current sensing and diagnostic feedback of the
whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Figure 34.Maximum turn-off current versus inductance (for each channel)
Figure 35.PowerSSO-24 PC board
Figure 36.Rthj-amb vs PCB copper area in open box free air condition (one channel on). . . . . . . . . 30
Figure 37.PowerSSO-24 thermal impedance junction to ambient single pulse (one channel on) . . . 31
Figure 38.Thermal fitting model of a double channel HSD in PowerSSO-24
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
-V
-I
GND
I
OUT
- I
OUT
I
IN
CSD
-I
CSENSE
V
CSENSE
DC supply voltage41
Reverse DC supply voltage0.3
CC
DC reverse ground pin current200mA
DC output currentInternally limited
Reverse DC output current24
DC input current
DC current sense disable input current
DC reverse CS pin current200
Current sense maximum voltageVCC- 41 to +V
-1 to 10
CC
V
A
mAI
V
Doc ID 14618 Rev 47/38
Electrical specificationsVND5E025AK-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy (single pulse)
E
MAX
(L = 0.8 mH; R
= I
limL
(Typ.))
I
OUT
=0Ω; V
L
= 13.5 V; T
bat
jstart
= 150 °C;
140mJ
Electrostatic discharge
(Human Body Model: R = 1.5 kΩ; C = 100 pF)
4000
2000
4000
5000
5000
V
V
V
V
V
°C
V
V
ESD
ESD
T
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature- 40 to 150
j
Storage temperature- 55 to 150
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)1.35
Thermal resistance junction-ambient See Figure 36
2.3 Electrical characteristics
Values specified in this section are for 8 V<VCC<28V; -40°C<Tj<150 °C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
USDhyst
R
V
clamp
Operating supply
CC
voltage
Undervoltage shutdown3.54.5
USD
Undervoltage shutdown
hysteresis
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
(1)
4.51328
I
=3A; Tj=25°C25
OUT
=3A; Tj=150°C50
OUT
=3A; VCC=5V; Tj=25°C35
I
OUT
°C/W
VV
0.5
mΩI
8/38 Doc ID 14618 Rev 4
VND5E025AK-EElectrical specifications
Table 5.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
I
L(off1)
V
Supply current
S
Off-state output
current
Output - VCC diode
F
voltage
(1)
(1)
Off-state; V
V
IN=VOUT=VSENSE=VCSD
On-state; VCC=13V; VIN=5V;
I
=0A
OUT
VIN=V
OUT
Tj=25°C
V
IN=VOUT
= 125 °C
T
j
-I
=4 A; Tj=150°C0.7V
OUT
=13V; Tj=25°C;
CC
=0V; VCC=13V;
=0V; VCC=13V;
=0V
(2)5 (2)
2
36mA
00.013
05
1. For each channel.
2. PowerMOS leakage included.
Table 6.Switching (VCC=13V; Tj=25°C)
SymbolParameterTest conditions Min.Typ.Max. Unit
t
d(on)
t
d(off)
/dt)onTurn-On voltage slope
(dV
OUT
/dt)
(dV
OUT
W
ON
W
OFF
Turn-On delay time
Turn-Off delay time40
RL=4.3 Ω
(see Figure 6)
See Figure 27
=4.3 Ω
R
Turn-Off voltage slopeSee Figure 28
off
L
Switching energy losses
during t
Switching energy losses
during t
ON
W
RL=4.3 Ω
(see Figure 6)
OFF
W
20
0.6
0.35
µA
µA
µs
V/µs
mJ
Doc ID 14618 Rev 49/38
Electrical specificationsVND5E025AK-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
Low level input currentVIN=0.9V1µA
Input high level voltage2.1V
High level input currentVIN=2.1V10µA
Input hysteresis voltage0.25
Input clamp voltage
IN
I
=-1mA-0.7
IN
VV
I
=1mA5.57
CS_DIS low level voltage0.9
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25
I
CS_DIS clamp voltage
=1mA5.57
CSD
=-1mA-0.7
I
CSD
(1)
V
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13 V4360
I
LIMH
I
LIML
T
TSD
T
T
T
HYST
V
DEMAG
V
RS
ON
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200
Reset temperatureTRS+1 TRS+5
R
Thermal reset of STATUS135
Thermal hysteresis
(T
TSD-TR
)
Turn-Off output voltage
clamp
Output voltage drop
limitation
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CC
5V<V
CC
<28V
VCC=13V;
TR<Tj<T
I
OUT
TSD
=2A; VIN=0;
L=6 mH
=0.1A;
I
OUT
= -40 °C to +150 °C
T
j
(see Figure 8)
15
7
-41 VCC-46 VCC-52 V
V
CC
25mV
85
A
°C
10/38 Doc ID 14618 Rev 4
VND5E025AK-EElectrical specifications
Table 9.Current sense (8 V < VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
dK
K
LED
K
K
1/K1
K
0
1
(1)
2
I
OUT/ISENSE
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
= 0.05 A; V
OUT
Tj= -40 °C to 150 °C
I
=0.5A; V
OUT
= -40 °C to 150 °C
T
j
I
=2 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj= -40 °C to 150 °C
=25°C to 150°C
T
j
=2 A; V
I
OUT
V
CSD
= -40 °C to 150 °C
T
j
I
=3 A; V
OUT
V
CSD
= -40 °C to 150 °C
T
j
SENSE
=0V;
SENSE
=0V;
Tj= 25 °C to150 °C
SENSE
=4 V;
=4 V;
=4V;
= 0.5 V; V
= 0.5 V; V
CSD
CSD
=0V;
=0V;
1240 3350 4960
1860 3150 4600
2100
3100
4400
2250
3100
3850
-1313%
2200
3000
4100
2450
3000
3550
dK
2/K2
dK
3/K3
I
SENSE
=3 A; V
Current sense
(1)
ratio drift
K
3
(1)
I
OUT/ISENSE
Current sense
ratio drift
Analog sense
leakage
0
I
OUT
Tj= -40 °C to 150 °C
I
= 10 A; V
OUT
V
=0V;
CSD
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
= 10 A; V
I
OUT
= -40°C to 150°C
T
j
=0A; V
I
OUT
=5V; VIN=0V; Tj= -40°C to 150°C
V
CSD
V
=0V; VIN=5V; Tj= -40 °C to 150 °C
CSD
SENSE
SENSE
SENSE
SENSE
=4V; V
=4V;
=4V; V
=0V;
CSD
CSD
=0V;
=0V;
-1212%
2550
2850
3280
2650
2850
3180
-6+6%
0
0
1
2
µA
µA
current
I
=2A; V
OUT
V
=5V; VIN=5V; Tj= -40°C to 150°C
CSD
SENSE
=0V;
0
1
µA
Open-load on-
= 5 V, 8 V < VCC<18V
I
OL
state current
detection
threshold
V
IN
I
SENSE
= 5 µA
530mA
Max analog
V
SENSE
sense output
I
OUT
=3 A; V
=0V 5
CSD
voltage
Analog sense
V
SENSEH
output voltage
in fault
condition
(1)
VCC=13V; R
=3.9kΩ8
SENSE
V
Doc ID 14618 Rev 411/38
Electrical specificationsVND5E025AK-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
Analog sense
I
SENSEH
output current
in fault
condition
(2)
VCC=13V; V
=5V9mA
SENSE
Delay
t
DSENSE1H
response time
from falling
edge of
SENSE
<4V, 0.5<I
= 90% of I
V
I
SENSE
(see Figure 4)
SENSEMAX
OUT
<10A
CS_DIS pin
Delay
t
DSENSE1L
response time
from rising
edge of
SENSE
<4V, 0.5<I
=10% of I
V
I
SENSE
(see Figure 4)
<10A
OUT
SENSEMAX
CS_DIS pin
Delay
t
DSENSE2H
response time
from rising
edge of INPUT
SENSE
<4V, 0.5<I
= 90% of I
V
I
SENSE
(see Figure 4)
SENSEMAX
OUT
<10A
pin
Delay
Δt
DSENSE2H
response time
between rising
edge of output
current and
rising edge of
V
I
SENSE
I
OUT
(see Figure 7)
SENSE
=90% of I
=90% of I
<4V,
SENSEMAX,
OUTMAX
, I
OUTMAX
=3A
current sense
Delay
t
DSENSE2L
response time
from falling
edge of INPUT
SENSE
<4V, 0.5<I
=10% of I
V
I
SENSE
(see Figure 4)
<10A
OUT
SENSEMAX
pin
1. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
30100
520
80300
µs
110
70250
Table 10.Open-load detection (8 V < VCC<18V)
SymbolParameterTest conditionMin.Typ.Max. Unit
V
t
DSTKON
I
L(off2)r
Open-load off-state
OL
voltage detection threshold
Output short circuit to V
detection delay at turn-off
Off-state output current at
V
= 4V
OUT
V
CC
See Figure 51801200µs
V
V
12/38 Doc ID 14618 Rev 4
=0V2
IN
=0V; V
IN
rising from 0 V to 4 V
OUT
SENSE
=0V
See
Figure 5
4V
-1200µA
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