Double channel high side driver for automotive applications
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistance
Current limitation (typ)I
Off state supply current (typ)I
1. Typical value with all loads connected.
CC
CC
R
ON
LIMH
S
41V
4.5 to 36V
160 mΩ
5A
(1)
2 µA
VND5160J-E
PowerSSO-12
– Electrostatic discharge protection
Application
■ General
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Open drain status output
– On state open load detection
– Off state open load detection
– Thermal shutdown indication
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– Output stuck to Vcc detection
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Thermal shut down
– Reverse battery protection (see Figure 28)
Table 1.Device summary
■ All types of resistive, inductive and capacitive
loads
Description
The VND5160J-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active V
device against low energy spikes (see ISO7637
transient compatibility table).
The device detects open load condition in both
ON and OFF states, when STAT_DIS is left open
or driven low. Output shorted to V
the OFF state.
When STAT_DIS is driven high, the STATUS pin is
in a high impedance condition.
Output current limitation protects the device in
overload condition. In case of long duration
overload, the device limits the dissipated power to
safe level up to thermal shut-down intervention.
Thermal shut-down with automatic restart allows
the device to recover normal operation as soon as
fault condition disappears.
Ground connection. Must be reverse battery protected by an external diode/
resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
OUTPUT1
CLAMP 2
1
1
DRIVER 2
OPENLOAD ON 2
OPENLOAD OFF 2
V
I
LIM
DSLIM
2
2
OUTPUT2
STATUSnOpen Drain digital diagnostic pin.
STAT_DISActive high CMOS compatible pin, to disable the STATUS pin.
5/31
Block diagram and pin descriptionVND5160J-E
Figure 2.Configuration diagram (top view)
TAB = V
GND
STAT_DIS
INPUT 1
STATUS 1
STATUS 2
INPUT 2
1
2
3
4
5
6
12
11
10
9
8
7
cc
V
cc
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
V
cc
Table 3.Suggested connections for unused and N.C. pins
Connection / PinSTATUSN.C.OUTPUTINPUTSTAT_DIS
FloatingXXXXX
To groundN.R.
1. Not recommended.
(1)
XN.R.
Through 10kΩ
resistor
Through 10kΩ
resistor
6/31
VND5160J-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
V
V
Fn
OUTn
S
V
CC
V
CC
I
I
SD
STAT_DIS
V
SD
I
INn
INPUTn
V
INn
OUTPUTn
STATUSn
OUTn
I
STATn
V
STATn
GND
I
GND
Note:V
Fn
= V
OUTn
- V
during reverse battery condition.
CCn
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
-I
I
STAT
I
STAT_DIS
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 6A
OUT
DC input current +10 / -1mA
I
IN
DC status current +10 / -1mA
DC status disable current +10 / -1mA
Maximum switching energy
MAX
(L=12mH; R
= I
I
OUT
limL
=0Ω; V
L
(Typ.) )
=13.5V; T
bat
jstart
=150°C;
33mJ
7/31
Electrical specificationsVND5160J-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R=1.5KΩ;
C=100pF)
V
V
ESD
ESD
T
– INPUT
–STATUS
–STAT_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150°C
stg
4000
4000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (max.) (with one channel ON)8°C/W
Values specified in this section are for 8V<VCC<36V; -40°C<Tj<150°C, unless otherwise
stated.
.
Table 6.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
Operating supply voltage4.51336V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage Shut-down
hysteresis
I
= 1A; Tj= 25°C
On state resistance
ON
Clamp voltageIS= 20mA414652V
clamp
(2)
OUT
= 1A; Tj= 150°C
I
OUT
= 1A; VCC= 5V; Tj= 25°C
I
OUT
Off State; VCC=13V; VIN=V
I
Supply current
S
I
L(off1)
I
L(off2)
Off state output current
Output - VCC diode
V
F
voltage
(2)
1. PowerMOS leakage included.
2. For each channel.
Table 7.Switching (VCC=13V; Tj=25°C)
Tj= 25°C;
On State; V
I
OUT
VIN=V
(2)
V
IN=VOUT
VIN=0V; V
-I
OUT
CC
=0A
=0V; VCC=13V; Tj=25°C
OUT
=0V; VCC=13V; Tj=125°C
OUT
=0.6A; Tj=150°C0.7V
0.5V
160
320
210
=0
OUT
(1)
2
=13V; VIN=5V;
5
3
000.013
=4V-750
mΩ
mΩ
mΩ
(1)
6µAmA
5
µA
SymbolParameterTest conditionsMin. Typ. Max. Unit
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn-On delay time RL=13Ω (see Figure 6)10 µs
Turn-Off delay time RL=13Ω (see Figure 6)15 µs
/dt
Turn-On voltage slopeRL=13ΩSee Figure 21V/ µs
(on)
/dt
Turn-Off voltage slopeRL=13ΩSee Figure 22V/ µs
(off)
Switching energy losses during t
Switching energy losses during t
=13Ω (see Figure 6)0.07 mJ
wonRL
=13Ω (see Figure 6)0.04 mJ
woffRL
9/31
Electrical specificationsVND5160J-E
Table 8.Status pin (VSD=0)
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
V
Table 9.Protection
Status low output voltageI
Status leakage current
Status pin input capacitance
Status clamp voltage
SCL
(1)
= 1.6 mA, VSD=0V0.5V
STAT
Normal operation or V
V
= 5V
STAT
Normal operation or V
V
= 5V
STAT
I
= 1mA
STAT
= - 1mA
I
STAT
SD
SD
=5V,
=5V,
5.5
10µA
100pF
7V
-0.7
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
I
T
T
T
t
limH
limL
TSD
T
R
RS
HYST
SDL
DC short circuit current
Short circuit current during
thermal cycling
VCC= 13V
5V<VCC<36V
V
= 13V TR<Tj<T
CC
TSD
Shutdown temperature150175200°C
Reset temperature
Thermal reset of STATUS135°C
Thermal hysteresis (T
Status delay in overload
conditions
TSD-TR
)
T
j>TTSD
3.557.5
7.5
2A
TRS + 1 TRS + 5
7°C
20µs
V
A
A
°C
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Turn-Off output voltage
clamp
Output voltage drop
ON
limitation
=1A; VIN=0; L=20mH
I
OUT
I
= 0.03A;
OUT
= -40°C...+150°C
T
j
(see Figure 5)
VCC-41 VCC-46 VCC-52
25mV
V
10/31
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