Double channel high side driver with analog current sense
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General features
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
cc
– Thermal shut down
Table 1.Device summary
Package
CC
CC
ON
LIMH
S
4.5 to 36V
160 mΩ
2 µA
41 V
5 A
VND5160AJ-E
for automotive applications
PowerSSO-12
– Reverse battery protection (see Application
(1)
TubeTape and Reel
schematic)
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5160AJ-E is a monolithic device made
using STMicroelectronics VIPower technology. It
is intended for driving resistive or inductive loads
with one side connected to ground. Active V
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio) when CS_DIS is driven low or left
open. When CS_DIS is driven high, the
CURRENT SENSE pin is in a high impedance
condition. Output current limitation protects the
device in overload condition. In case of long
overload duration, the device limits the dissipated
power to safe level up to thermal shut-down
intervention. Thermal shut-down with automatic
restart allows the device to recover normal
operation as soon as fault condition disappears.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls
output switch state.
Pwr
LIM
UNDERVOLTAGE
DRIVER 1
Pwr
1
LIM
OVERTEMP. 1
I
OUT1
2
PwCLAMP 1
V
K 1
I
LIM
DSLIM
OUTPUT1
CURRENT
SENSE1
1
1
DRIVER 2
I
OUT2
PwCLAMP 2
I
LIM
V
DSLIM
OVERTEMP. 2
K 2
OUTPUT2
2
2
CURRENT
SENSE2
CURRENT SENSE
Analog current sense pin, delivers a current proportional to the load current.
n
CS_DISActive high CMOS compatible pin, to disable the current sense pin.
5/31
Block diagram and pin descriptionVND5160AJ-E
Figure 2.Configuration diagram (top view)
GND
INPUT2
INPUT1
CURRENT SENSE1
CURRENT SENSE2
CS_DIS
TAB = V
1
2
3
4
5
6
12
11
10
9
8
7
N.C.
OUTPUT2
OUTPUT2
OUTPUT1
OUTPUT1
N.C.
cc
PowerSSO-12
Note:The above pin configuration reflects the changes notified with PCN-APG-BOD/07/2886. The
new pinout is backaward compatible with existing PCB layouts where pins #7 and 12 are
connected to Vcc. For new PCB designs, these pins should be left unconnected.
Table 3.Suggested connections for unused and N.C. pins
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
OUT
- I
I
CSD
-I
CSENSE
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse DC output current 6A
OUT
I
DC input current -1 to 10mA
IN
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L=12mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
VCC-41
+V
CC
34mJ
V
V
7/31
Electrical specificationsVND5160AJ-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R=1.5KΩ;
C=100pF)
V
V
ESD
ESD
T
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150 °C
stg
4000
2000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (MAX) (With one channel ON)8°C/W
The values specified in this section are for 8V<VCC<36V; -40°C<Tj<150°C, unless otherwise
stated.
Table 6.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
I
L(off)
1. For each channel.
2. PowerMOS leakage included.
Operating supply voltage4.51336V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shut-down
hysteresis
I
= 0.5A; Tj= 25°C
OUT
On state resistance
ON
Clamp voltageIS= 20 mA414652V
clamp
I
Supply current
S
Off state output
current
Output - VCC diode
V
F
voltage
(1)
(1)
(1)
= 0.5A; Tj= 150°C
I
OUT
I
= 0.5A; VCC= 5V; Tj= 25°C
OUT
Off State; V
VIN=V
OUT=VSENSE=VCSD
On State; V
VIN=V
OUT
V
IN=VOUT
-I
= 0.6A; Tj=150°C0.7V
OUT
= 13V; Tj= 25°C;
CC
=0V
=13V; VIN=5V; I
CC
OUT
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C
=0A
000.013
0.5V
160
320
210
(2)
(2)
5
2
3
6µAmA
5
Table 7.Switching (VCC=13V, Tj=25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
mΩ
mΩ
mΩ
µA
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn- On delay time RL= 26Ω (see Figure 8.)10 µs
Turn- Off delay time RL= 26Ω (see Figure 8.)15 µs
Turn- On voltage
/dt)
on
slope
Turn- Off voltage
/dt)
off
slope
Switching energy
losses during twon
Switching energy
losses during t
woff
= 26Ω
R
L
R
= 26Ω
L
RL= 26Ω (see Figure 8.)0.03 mJ
RL= 26Ω (see Figure 8.)0.02 mJ
See
Figure 20.
See
Figure 22.
V/µs
V/µs
9/31
Electrical specificationsVND5160AJ-E
Table 8.Logic input
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 9.Protection and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
IN
= -1mA
I
IN
= 1mA
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
= 0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
= 2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
(1)
I
I
CSD
CSD
= 1mA
= -1mA
5.5
-0.7
7V
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
DC short circuit current
VCC= 13V
5V<VCC<36V
3.857.5
7.5
V
V
A
A
I
T
T
T
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Short circuit current during
limL
thermal cycling
Shutdown temperature150175200°C
TSD
T
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of STATUS135°C
RS
Thermal hysteresis (T
HYST
TSD-TR
Turn-Off output voltage clamp
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
= 13V; TR<Tj<T
V
CC
TSD
2A
)7°C
I
= 1A; VIN= 0;
OUT
L= 20mH
I
= 0.03A;
OUT
Tj= -40°C...150°C
VCC-41 VCC-46 VCC-52V
25mV
(see Figure 9.)
10/31
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