power limitation
– Very low standby current
– 3.0 V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Open drain status output
– On-state open load detection
– Off-state open load detection
– Thermal shutdown indication
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Output stuck to V
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
Description
The VND5050K-E and VND5050J-E are
monolithic devices made using
STMicroelectronics VIPower M0-5 technology.
they are intended for driving resistive or inductive
loads with one side connected to ground. Active
V
pin voltage clamp protects the devices
CC
against low energy spikes (see ISO7637 transient
compatibility table). The devices detect open load
condition both in on and off-state, when
STAT_DIS is left open or driven low. Output
shorted to V
When STAT_DIS is driven high, STATUS pin is in
high impedance state.
Output current limitation protects the devices in
overload condition. In case of long overload
duration, the devices limit the dissipated power to
a safe level up to thermal shutdown intervention.
Thermal shutdown with automatic restart allows
the devices to recover normal operation as soon
as fault conditions disappear.
Table 3.Suggested connections for unused and not connected pins
PowerSSO-24
Connection/pinSTATUSN.C.OUTPUTINPUTSTAT_DIS
FloatingXXXXX
To groundN.R.
1. Not recommended.
(1)
XN.R.
Through 10KΩ
resistor
Through 10KΩ
resistor
6/37 Doc ID 12266 Rev 6
VND5050J-E / VND5050K-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
V
CC
Fn
V
I
SD
V
SD
I
INn
INPUTn
V
INn
Note:V
Fn
= V
OUTn
- V
during reverse battery condition.
CCn
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
GND
OUTPUTnSTAT_DIS
STATUSn
I
GND
I
OUTn
I
STATn
V
STATn
V
OUTn
V
- V
- I
I
OUT
- I
I
STAT
I
STAT_DIS
E
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse dc output current 15A
OUT
DC input current+10 / -1mA
I
IN
DC status current+10 / -1mA
DC status disable current+10 / -1mA
Maximum switching energy
MAX
(L=3mH; RL=0Ω; V
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
104mJ
Doc ID 12266 Rev 67/37
Electrical specificationsVND5050J-E / VND5050K-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R=1.5KΩ;
C=100pF)
– Input
ESD
– Status
V
–STAT_DIS
– Output
–V
CC
V
Charge device model (CDM-AEC-Q100-011)750V
ESD
T
Junction operating temperature-40 to 150°C
j
4000
4000
4000
5000
5000
V
V
V
V
V
T
Storage temperature- 55 to 150°C
stg
2.2 Thermal data
Table 5.Thermal data
SymbolParameter
R
thj-case
R
thj-amb
Thermal resistance junction case (max)
(with one channel on)
Thermal resistance junction ambient
(max)
2.3 Electrical characteristics
8V<VCC<36 V; -40 °C<Tj<150 °C, unless otherwise specified.
.
Table 6.Power section
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
V
USD
V
USDhyst
Operating supply voltage4.51336V
CC
Undervoltage shutdown3.54.5V
Undervoltage shutdown
hysteresis
Value
Unit
PowerSSO-12PowerSSO-24
2.82.8°C/W
See Figure 32See Figure 36°C/W
0.5V
I
R
On-state resistance
ON
(2)
I
I
V
clamp
Clamp voltageIS=20mA414652V
Off-state; V
S
Supply current
I
VIN=V
On-state; V
I
8/37 Doc ID 12266 Rev 6
=2A; Tj=25°C
OUT
=2A; Tj=150°C
OUT
=2A; VCC=5V; Tj=25°C
OUT
=13V; Tj=25°C;
CC
OUT=VSENSE=VCSD
=13V; VIN=5V;
CC
=0A
OUT
=0V
50
mΩ
100
mΩ
65
mΩ
(1)
(1)
5
2
3
6µAmA
VND5050J-E / VND5050K-EElectrical specifications
Table 6.Power section (continued)
SymbolParameterTest conditionsMin.Typ. Max.Unit
I
L(off1)
I
L(off2)
V
Off-state output
current
Off-state output
current
Output - VCC diode
F
voltage
(2)
(2)
(2)
VIN=V
=25°C
T
j
VIN=V
=125°C
T
j
VIN=0V; V
-I
OUT
=0V; VCC=13V;
OUT
000.013
=0V; VCC=13V;
OUT
=4V-750
OUT
5
=4A; Tj=150°C0.7V
1. PowerMOS leakage included.
2. For each channel.
Table 7.Switching (VCC=13V; Tj= 25°C)
SymbolParameterTest conditionsMin.Typ. Max. Unit
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
/dt
/dt
ON
OFF
Turn-on delay time RL= 6.5Ω (see Figure 5)20µs
Turn-off delay time RL= 6.5Ω (see Figure 5)40µs
Turn-on voltage slopeRL= 6.5Ω See Figure 22V/µs
(on)
Turn-off voltage slopeRL= 6.5Ω See Figure 24V/µs
(off)
Switching energy losses
during t
won
Switching energy losses
during t
woff
RL= 6.5Ω (see Figure 5)0.21mJ
RL= 6.5Ω (see Figure 5)0.28mJ
µA
Table 8.Status pin (VSD=0V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
STAT
I
LSTAT
C
STAT
V
Status low output
voltage
Status leakage current
Status pin input
capacitance
Status clamp voltage
SCL
= 1.6 mA, VSD=0V0.5V
I
STAT
Normal operation or V
= 5V
V
STAT
SD
=5V,
Normal operation or VSD=5V,
V
= 5V
STAT
= 1mA
I
STAT
I
STAT
= -1mA
5.5
-0.7
10µA
100pF
7V
V
Doc ID 12266 Rev 69/37
Electrical specificationsVND5050J-E / VND5050K-E
Table 9.Protections
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
RS
T
HYST
t
SDL
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
R
Thermal reset of STATUS135°C
Thermal hysteresis
(T
TSD-TR
)
Status delay in overload
conditions
Turn-off output voltage
clamp
Output voltage drop
limitation
VCC=13V
5V<VCC<36V
=13V
V
CC
TR<Tj<T
T
I
OUT
I
OUT
T
TSD
(see Figure 4)20µs
j>TTSD
=2A; VIN=0; L=6mH
= 0.1A;
= -40°C...+150°C
j
(see Figure 6)
121824
24
7A
TRS + 1TRS + 5
7°C
VCC-41VCC-46VCC-52
25mV
A
A
°C
V
Table 10.Openload detection
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
OL
t
DOL(on)
Openload on-state
detection threshold
Openload on-state
detection delay
= 5V,8V<VCC<18V10
V
IN
I
= 0A, VCC=13V
OUT
(see Figure 4)
See
Figure 19
70mA
200µs
Delay between INPUT
t
POL
falling edge and STATUS
rising edge in Openload
= 0A (see Figure 4)2005001000µs
I
OUT
condition
Openload off-state
V
voltage detection
OL
V
= 0V, 8V<VCC<16V 2
IN
threshold
See
Figure 20
4V
Output short circuit to
t
DSTKON
V
detection delay at
CC
(see Figure 4)180t
POL
µs
turn-off
Table 11.Logic input
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
I
Input low level0.9V
IL
Low level input currentVIN =0.9 V1µA
IL
10/37 Doc ID 12266 Rev 6
VND5050J-E / VND5050K-EElectrical specifications
Table 11.Logic input (continued)
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
I
V
I(hyst)
V
ICL
V
SDL
I
SDL
V
SDH
I
SDH
V
SD(hyst)
V
SDCL
Input high level2.1V
IH
High level input currentVIN = 2.1 V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
STAT_DIS low level
voltage
Low level STAT_DIS
current
STAT_DIS high level
voltage
High level STAT_DIS
current
STAT_DIS hysteresis
voltage
STAT_DIS clamp voltage
Figure 4.Status timings
I
= 1mA
IN
= -1mA
I
IN
V
= 0.9 V1µA
SD
5.5
-0.7
2.1V
= 2.1 V10µA
V
SD
0.25V
ISD= 1mA
= -1mA
I
SD
5.5
-0.7
7V
V
0.9V
7V
V
OPEN LOAD STATUS TIMING (without external pull-up)
I
< I
OUT
I
OUT
> I
OL
OL
V
t
CC
V
t
DSTKON
OUT
POL
OUT
< V
> V
OL
OL
V
IN
V
STAT
t
DOL(on)
OUTPUT STUCK TO V
V
IN
V
STAT
t
DOL(on)
OPEN LOAD STATUS TIMING (with external pull-up)
I
< I
OUT
V
V
IN
STAT
t
DOL(on)
OL
V
OUT
> V
OL
OVER TEMP STATUS TIMING
Tj > T
V
V
IN
STAT
t
SDL
TSD
t
SDL
Doc ID 12266 Rev 611/37
Electrical specificationsVND5050J-E / VND5050K-E
Table 12.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
H
H
=0V)
(1)
Current limitation
Over temperature
Undervoltage
Output voltage > V
Output current < I
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CSD
OL
OL
L
H
L
H
L
H
L
H
L
H
L
X
L
L
L
L
H
H
L
H
2. The STATUS pin is low with a delay equal to tDSTKON after INPUT falling edge.
3. The STATUS pin becomes high with a delay equal to tPOL after INPUT falling edge.
Figure 5.Switching characteristics
V
OUT
90%
t
f
dV
OUT
dV
OUT
/dt
(on)
80%
t
r
10%
/dt
(off)
H
H
H
H
L
X
X
(2)
L
H
(3)
L
t
INPUT
t
d(on)
12/37 Doc ID 12266 Rev 6
t
d(off)
t
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