The VND10N06 and VND10N06-1 are monolithic
devices designed in STMicroelectronics VIPower
M0-2 technology, intended for replacement of
standard Power MOSFETs in DC to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protect
the chip in harsh environments.
VND10N06 / VND10N06-1Block diagram and pin description
1 Block diagram and pin description
Figure 1.Block diagram
5/25
Electrical specificationsVND10N06 / VND10N06-1
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
1. Parameters guaranteed by design / characterization.
Drain current limitV
lim
Step response current
(1)
limit
Overtemperature
(1)
shutdown
(1)
Overtemperature reset135°C
Single pulse
(1)
avalanche energy
= 7V; VDS=13V 61015A
IN
= 7 V; VDS step from 0 to 13V1220µs
V
IN
150°C
Starting Tj = 25°C; V
V
= 7V R
IN
= 1kΩ; L = 10mH
gen
DD
= 24V
250mJ
Figure 2.
Switching waveforms
8/25
VND10N06 / VND10N06-1Electrical specifications
Figure 3.
Figure 4.
Switching time test circuit for resistive load
Test circuit for inductive load switching and diode recovery time
9/25
Electrical specificationsVND10N06 / VND10N06-1
Figure 5.Unclamped inductive load test circuits
R
V
IN
P
W
GEN
Figure 6.Input charge test circuit
IN
V
GEN
10/25
ND8003
VND10N06 / VND10N06-1Electrical specifications
Figure 7.Unclamped inductive waveforms
11/25
Electrical specificationsVND10N06 / VND10N06-1
2.4 Electrical characteristics curves
Figure 8.Static Drain-Source on
resistance (V
Figure 10. Derating curveFigure 11. Static Drain-Source on
= 3.5V)
IN
Figure 9.Static Drain-Source on
resistance (VIN = 5V)
resistance vs. input voltage
Figure 12. Current limit Vs. junction
temperature
12/25
Figure 13. Source-Drain diode voltage
Vs. junction temperature
VND10N06 / VND10N06-1Electrical specifications
Figure 14. Step response current limitFigure 15. Switching time resistive load
Figure 16. Turn-on current slope
(V
= 3.5V)
IN
Figure 18. Input voltage Vs. input
charge
Figure 17. Turn-on current slope
(VIN = 7V)
Figure 19. Turn-off Drain-Source voltage
slope
13/25
Electrical specificationsVND10N06 / VND10N06-1
Figure 20. Turn-off Drain-Source voltage
Figure 21. Capacitance variations
slope
Figure 22. Switching time resistive load Figure 23. Normalized on resistance Vs.
temperature (V
= 7V)
IN
Figure 24. Output characteristicsFigure 25. Normalized on resistance Vs.
14/25
temperature (V
= 3.5V)
IN
VND10N06 / VND10N06-1Electrical specifications
Figure 26. Normalized input threshold
voltage Vs. temperature
15/25
Protection featuresVND10N06 / VND10N06-1
3 Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path as soon as V
The device then behaves like a standard power MOSFET and can be used as a switch from
DC to 50KHz. The only difference from the user’s standpoint is that a small DC current I
flows into the INPUT pin in order to supply the internal circuitry.
During turn-off of an unclamped inductive load the output voltage is clamped to a safe level
by an integrated Zener clamp between DRAIN pin and the gate of the internal Power
MOSFET.
In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the
inductive load current even if the INPUT pin is driven to 0V. The device integrates an active
current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage.
When the current limiter is active, the device operates in the linear region, so power
dissipation may exceed the heatsinking capability. Both case and junction temperatures
increase, and if this phase lasts long enough, junction temperature may reach the
overtemperature threshold T
If T
reaches T
j
, the device shuts down whatever the INPUT pin voltage. The device will
jsh
restart automatically when T
.
jsh
has cooled down to T
j
jrs
.
> VIH.
IN
ISS
16/25
VND10N06 / VND10N06-1Thermal data
4 Thermal data
Figure 27. Thermal impedance for DPAK / IPAK
17/25
Package and packing informationVND10N06 / VND10N06-1
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 DPAK mechanical data
Figure 28. DPAK package dimensions
P 032P
18/25
VND10N06 / VND10N06-1Package and packing information
Table 10.DPAK mechanical data
Millimeters
Dim.
Min.Typ.Max.
A2.202.40
A10.901.10
A20.030.23
B0.640.90
B25.205.40
C0.450.60
C20.480.60
D6.006.20
D15.1
E6.406.60
E14.7
e2.28
G4.404.60
H9.3510.10
L20.8
L40.601.00
R0.2
V20°8°
Package weightGr. 0.29
19/25
Package and packing informationVND10N06 / VND10N06-1
5.3 IPAK mechanical data
Figure 29. IPAK mechanical data and package outline
Table 11.IPAK mechanical data
Symbol
Min.Typ.Max.
A2.22.4
A10.91.1
A30.71.3
B0.640.9
B25.25.4
B30.85
B50.3
B60.95
C0.450.6
C20.480.6
D6 6.2
E6.46.6
G4.44.6
H15.916.3
L99.4
L10.81.2
L20.81
Millimeters
20/25
VND10N06 / VND10N06-1Package and packing information
5.4 DPAK packing information
The devices can be packed in tube or tape and reel shipments (see the Device summary on
page 1 ).
Figure 30. DPAK footprint
Figure 31. DPAK tube shipment (no suffix)
A
C
Base Q.ty75
Bulk Q.ty3000
Tube length (± 0.5)532
A6
B21.3
B
C (± 0.1)0.6
All dimensions are in mm.
21/25
Package and packing informationVND10N06 / VND10N06-1
Figure 32. DPAK tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty2500
Bulk Q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)16.4
N (min)60
T (max)22.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
VND10N06 / VND10N06-1Package and packing information
5.5 IPAK packing information
Figure 33. IPAK tube shipment (no suffix)
Base Q.ty75
Bulk Q.ty3000
Tube length (± 0.5)532
A6
B21.3
C (± 0.1)0.6
All dimensions are in mm.
23/25
Revision historyVND10N06 / VND10N06-1
6 Revision history
Table 12.Document revision history
DateRevisionChanges
Oct-19971Initial release.
22-Aug-20062Document restructured.
12-Dec-20083
Document restructured and reformatted.
Added ECOPACK
®
packages information.
24/25
VND10N06 / VND10N06-1
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