ST VNP35N07FI, VNB35N07, VNV35N07 User Manual

	VNP35N07FI
	VNB35N07/VNV35N07
	ºOMNIFETº:
	FULLY AUTOPROTECTED POWER MOSFET

TYPE	Vclamp	RDS( on)	Ilim
VNP35N07FI	70 V	0.028 Ω	35 A
VNB35N07	70 V	0.028 Ω	35 A
VNV35N07	70 V	0.028 Ω	35 A

■LINEAR CURRENT LIMITATION

■THERMAL SHUT DOWN

■SHORT CIRCUIT PROTECTION

■INTEGRATED CLAMP

■LOW CURRENT DRAWN FROM INPUT PIN

■DIAGNOSTIC FEEDBACK THROUGH INPUT PIN

■ESD PROTECTION

■DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)

■COMPATIBLE WITH STANDARD POWER MOSFET

DESCRIPTION

The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh

BLOCK DIAGRAM ( )

ISOWATT220 3

2

1

	10
1	3
	1
D2PAK	PowerSO-10
TO-263

enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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VNP35N07FI-VNB35N07-VNV35N07

ABSOLUTE MAXIMUM RATING

Symbol	Parameter		Val ue	Unit
		Po werSO-10	ISOW AT T220
		D2PAK
VDS	Drain-source Voltage (Vin = 0)	Internally Clamped		V
Vin	Input Voltage		18	V
ID	Drain Current	Internally Limited		A
IR	Reverse DC Output Current		-50	A
Vesd	Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)		2000	V
Pto t	Total Dissipation at Tc = 25 oC	125	40	W
Tj	Operating Junction Temperature	Internally Limited		oC
Tc	Case Operating Temperature	Internally Limited		oC
Tst g	Storage Temperature	-55 to 150		oC

THERMAL DATA

					ISOW ATT 220	Pow erSO -10	D2PAK
Rt hj-ca se	Thermal	Resistance	Junction-case	Max	3.12	1	1	oC/W
Rt hj-a mb	Thermal	Resistance	Junction-ambient	Max	62.5	50	62.5	oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symb ol	Parameter	Test Cond ition s		Mi n. Typ . Max. Un it
VCLAMP	Drain-source Clamp	ID = 200 mA	Vin = 0	60	70	80	V
	Voltage
VCL TH	Drain-source Clamp	ID = 2 mA	Vin = 0	55			V
	Threshold Voltage
VI NCL	Input-Source Reverse	Iin = -1 mA		-1		-0.3	V
	Clamp Voltage
IDSS	Zero Input Voltage	VDS = 13 V	Vin = 0			50	μA
	Drain Current (Vin = 0)	VDS = 25 V	Vin = 0			200	μA
II SS	Supply Current from	VDS = 0 V	Vin = 10 V		250	500	μA
	Input Pin

ON ( )

Symb ol	Parameter		Test Cond ition s	Mi n. Typ . Max.		Un it
VIN(th)	Input Threshold	VDS = Vin	ID + Iin = 1 mA	0.8	3	V
	Voltage
RDS( on)	Static Drain-source On	Vi n = 10 V	ID = 18 A		0.028	Ω
	Resistance	Vi n = 5 V	ID = 18 A		0.035	Ω

DYNAMIC

Symb ol	Parameter	Test Cond ition s		Mi n. Typ . Max. Un it
gfs ( ) Forward		VDS = 13 V	ID = 18 A	20	25	S
	Transconductance
Coss	Output Capacitance	VDS = 13 V	f = 1 MHz Vin = 0		980 1400	pF

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ( )

Symb ol	Parameter
td(on)	Turn-on Delay Time
tr	Rise Time
td(of f)	Turn-off Delay Time
tf	Fall Time
td(on)	Turn-on Delay Time
tr	Rise Time
td(of f)	Turn-off Delay Time
tf	Fall Time
(di/dt)on	Turn-on Current Slope
Qi	Total Input Charge

Test Cond ition s		Mi n. Typ . Max.		Un it
VDD = 28 V	Id = 18 A	100	200	ns
Vgen = 10 V	Rgen = 10 Ω	350	600	ns
(see figure 3)		650	1000	ns
		200	350	ns
VDD = 28 V	Id = 18 A	500	800	ns
Vgen = 10 V	Rgen = 1000 Ω	2.7	4.2	μs
(see figure 3)		10	16	μs
		4.3	6.5	μs
VDD = 28 V	ID = 18 A	60		A/μs
Vi n = 10 V	Rgen = 10 Ω
VDD = 12 V	ID = 18 A Vi n = 10 V	100		nC

SOURCE DRAIN DIODE

Symb ol	Parameter	Test Cond ition s		Mi n. Typ .	Max.	Un it
VSD ( )	Forward On Voltage	ISD = 18 A	Vin = 0		1.6	V
tr r( )	Reverse Recovery	ISD = 18 A	di/dt = 100 A/μs	250		ns
Qr r( )	Time	VDD = 30 V	Tj = 25 oC			μC
	Reverse Recovery	(see test circuit, figure 5)		1
IRRM ( )	Charge
	Reverse Recovery			8		A

Current

PROTECTION

Symb ol	Parameter		Test Cond ition s	Mi n. Typ . Max. Un it
Ilim	Drain Current Limit	Vi n = 10 V	VDS = 13 V	25	35	45	A
		Vi n = 5 V	VDS = 13 V	25	35	45	A
tdl im( )	Step Response	Vi n = 10 V			35	60	μs
	Current Limit	Vi n = 5 V			70	140	μs
Tj sh( ) Overtemperature				150			oC
	Shutdown

Tj rs( )	Overtemperature Reset
Igf( )	Fault Sink Current	Vi n = 10 V	VDS = 13 V
		Vi n = 5 V	VDS = 13 V
Eas( )	Single Pulse	starting Tj = 25 oC VDD
	Avalanche Energy	Vi n = 10 V	Rgen = 1 KΩ

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % ( ) Parameters guaranteed by design/characterization

	135	oC
	50	mA
	20	mA
= 20 V	2.5	J
L = 10 mH

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PROTECTION FEATURES

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:

-OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

-LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

-OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction

temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically

restarted when the chip temperature falls below 135oC.

-STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the

input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

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