The VN920 is a monolithic device designed in
STMicroelectronics VIPower M0-3 technology.
The VN920 is intended for driving any type of load
with one side connected to ground. The active
V
pin voltage clamp protects the device against
CC
low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against over-load.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns off in
the case where the ground pin becomes
disconnected.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent SenseN.C.OutputInput
FloatingXXX
To ground
Through 1KΩ
resistor
X
Through 10KΩ
5/34
resistor
Electrical specificationsVN920
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
IN
V
IN
INPUT
CURRENT SENSE
2.1 Absolute maximum ratings
GND
CC
OUTPUT
I
GND
I
OUT
I
SENSE
V
SENSE
V
F
V
OUT
V
CC
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 3.Absolute maximum ratings
Val ue
SymbolParameter
V
- V
- I
I
OUT
- I
I
V
CSENSE
DC supply voltage41V
CC
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
gnd
DC output currentInternally limitedA
Reverse DC output current - 21A
OUT
DC input current+/- 10mA
IN
Current sense maximum voltage
Electrostatic discharge
(human body model: R = 1.5KΩ;
When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins.
2. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick).
3. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick) connected to all VCC pins.
4. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick).
Thermalresistance
junction-case
Thermalresistance
junction-lead
Thermalresistance
junction-ambient
Max. value
Unit
SO-16LPENTAWATTP
2
PAK
-1.31.3°C/W
15-°C/W
65
48
(1)
(3)
61.3
51.3
37
(4)
(2)
°C/W
°C/W
7/34
Electrical specificationsVN920
2.3 Electrical characteristics
Values specified in this section are for 8V < V
< 36V;-40°C < Tj < 150°C, unless otherwise
CC
stated.
Table 5.Power
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
R
V
CLAMP
I
L(off1)
I
L(off2)
I
L(off3)
Operating supply voltage5.51336V
CC
Under-voltage shutdown345.5V
USD
Over-voltage shutdown36V
OV
I
= 10A; Tj = 25°C;
OUT
On-state resistance
ON
Clamp voltageI
Supply current
I
S
Off-state output currentV
Off-state output currentV
Off-state output current
I
= 10A;
OUT
= 3A; V
I
OUT
= 20mA414855V
CC
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
On-state; V
= 0A; R
I
OUT
= V
IN
OUT
= 0V; V
IN
V
= V
IN
OUT
= 6V
CC
= 13V;
CC
= 0V
= 13V;
CC
= 0V; Tj = 25°C
= 13V; V
CC
SENSE
= 5V;
IN
= 3.9 kΩ
= 0V050µA
= 3.5V-750µA
OUT
= 0V; V
CC
= 13V;
Tj = 125°C
16
32
55
101025
20
5
5µA
mΩ
mΩ
mΩ
µA
µA
mA
V
= V
IN
Tj = 25°C
Note:V
I
L(off4)
CLAMP
Table 6.Switching (VCC=13V)
Off-state output current
and VOV are correlated. Typical difference is 5V.
SymbolParameterTest conditionsMin.Typ. Max. Unit
Turn-on delay time RL = 1.3Ω (see Figure 4.)50µs
Turn-off delay time RL = 1.3Ω (see Figure 4.)50µs
/dt
Turn-on voltage slope RL = 1.3Ω (see Figure 4.)See Figure 10.V/µs
(on)
/dt
Turn-off voltage slope RL = 1.3Ω (see Figure 4.)See Figure 12.V/µs
(off)
dV
dV
t
d(on)
t
d(off)
OUT
OUT
8/34
OUT
= 0V; V
CC
= 13V;
3µA
VN920Electrical specifications
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Table 8.Current sense (9V ≤ V
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high-level voltage3.25V
IH
I
High-level input currentV
IH
= 1.25V1µA
IN
= 3.25V10µA
IN
Input hysteresis voltage0.5V
Input clamp voltage
ICL
CC
≤ 16V)
I
IN
= - 1mA
I
IN
= 1mA
66.8
- 0.7
8V
SymbolParameterTest conditionsMin.Typ. Max.Unit
I
dK
dK
K
1
1/K1
K
2
2/K2
K
3
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
= 1A; V
OUT
= -40°C...150°C
T
j
= 1A; V
I
OUT
= - 40°C...150°C
T
j
I
= 10A; V
OUT
= - 40°C
T
j
= 25°C...150°C
T
j
= 10A; V
I
OUT
= -40°C...150°C
T
j
I
= 30A; V
OUT
= -40°C
T
j
Tj = 25°C...150°C
SENSE
SENSE
SENSE
SENSE
SENSE
= 0.5V;
= 0.5V;
= 4V;
= 4V;
= 4V;
3300 4400 6000
-10+10%
4200
4900
6000
4400
4900
5750
-8+8%
4200
4900
5500
4400
4900
5250
V
dK
3/K3
I
SENSE0
V
SENSE
V
SENSEH
Current sense
ratio drift
Analog sense
current
Max analog
sense output
voltage
Sense voltage in
over-temperature
condition
= 30A; V
I
OUT
= -40°C...150°C
T
j
= 6...16V; I
V
CC
V
T
V
R
V
R
V
= 0V;
SENSE
= -40°C...150°C010µA
j
= 5.5V; I
CC
= 10kΩ
SENSE
> 8V, I
CC
SENSE
CC
OUT
= 10kΩ
= 13V; R
= 4V;
SENSE
OUT
OUT
= 0A;
= 5A;
-6+6%
2
= 10A;
4
= 3.9kΩ5.5V
SENSE
9/34
V
V
Electrical specificationsVN920
Table 8.Current sense (9V ≤ V
≤ 16V) (continued)
CC
SymbolParameterTest conditionsMin.Typ. Max.Unit
Analog sense
R
VSENSEH
output
impedance in
over-temperature
= 13V; Tj > T
V
CC
output open
TSD
;
400Ω
condition
t
DSENSE
Current sense
delay response
To 9 0 % I
1. Current sense signal delay after positive input slope.
Table 9.VCC output diode
SENSE
(1)
500µs
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
F
Table 10.Protections
Forward on voltage- I
(1)
= 5A; Tj = 150°C0.6V
OUT
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
I
lim
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
V
Current limitation
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
= 13V
CC
5V < V
I
OUT
V
CC
IN
< 36V
= 2 A;
= 0V;
L = 6mH
= 1 A;
I
OUT
= -40°C...150°C
T
j
304575
V
CC
- 41 V
CC
- 48 V
50mV
75
- 55V
CC
A
A
10/34
VN920Electrical specifications
Table 11.Truth table
ConditionsInputOutputSense
Normal operation
Over-temperature
Under-voltage
Over-voltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
L
L
L
L
L
L
L
L
L
H
H
Nominal
V
SENSEH
(T
(T
j>TTSD
< Nominal
0
0
0
0
0
0
0
j<TTSD
) V
0
) 0
SENSEH
Negative output voltage clampLL0
Table 12.Electrical transient requirements
ISO T/R
Test level
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
11/34
Electrical specificationsVN920
Figure 4.Switching characteristics
V
OUT
Figure 5.I
I
OUT/ISENSE
6500
dV
/dt
OUT
(on)
I
SENSE
INPUT
t
d(on)
OUT/ISENSE
80%
t
r
90%
t
DSENSE
versus I
OUT
10%
t
d(off)
90%
t
f
dV
OUT
/dt
(off)
t
t
t
6000
5500
max.Tj=25...150°C
5000
min.Tj=25...150°C
4500
4000
3500
3000
0 2 4 6 8 1012141618202224262830 32
12/34
I
OUT
max.Tj=-40°C
typical value
min.Tj=-40°C
(A)
VN920Electrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
VCC > V
OV
USD
V
USDhyst
OVERVOLTAGE
V
OVhys t
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
T
j
INPUT
LOAD CURRENT
SENSE
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
CC
<Nominal
I
SENSE
=
V
SENSEH
R
SENSE
13/34
Electrical specificationsVN920
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High-level input current
Figure 9.Input clamp voltageFigure 10. Turn-on voltage slope
Vicl (V)
10
9.5
8.5
7.5
6.5
5.5
Iin =1mA
9
8
7
6
5
-50 -25 025 50 75 100 125 150 175
Tc (°C )
dVout/dt(on) (V/ms)
700
650
600
550
500
450
400
350
300
250
Vcc=13V
Rl=1.3Ohm
-50 -25025 50 75 100 125 150 175
Tc (ºC )
Figure 11. Over-voltage shutdownFigure 12. Turn-off voltage slope
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -25 025 50 75 100 125 150 175
Tc (°C )
dVout/dt(off) (V/ms)
550
500
450
400
350
300
250
200
150
100
Vcc=13V
Rl=1.3Ohm
50
0
-50 -25025 50 75 100 125 150 175
Tc (°C)
14/34
VN920Electrical specifications
Figure 13. I
vs T
LIM
case
Ili m (A )
100
90
Vcc=13V
80
70
60
50
40
30
20
10
0
-50 -25025 50 75 100 125 150 175
Tc (°C)
Figure 14. On-state resistance vs V
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
5 10152025303540
Tc = 150ºC
Tc = 25ºC
Tc = - 40ºC
Vcc (V)
Figure 15. Input high-levelFigure 16. Input hysteresis voltage
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 025 50 75 100 125 150 175
Tc (°C)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 025 50 75 100 125 150 175
Tc (°C)
CC
Figure 17. On-state resistance vs TcaseFigure 18. Input low level
Ron (mOhm)
50
45
40
35
30
25
20
15
10
5
0
Iout=10A
Vc c=8V ; 36V
-50 -25 025 50 75 100 125 150 175
Tc (ºC )
15/34
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 025 50 75 100 125 150 175
Tc (°C)
Application informationVN920
3 Application information
Figure 19. Application schematic
+5V
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
µ
C
prot
R
SENSE
CURRENT SENSE
V
GND
R
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
GND
only)
D
ld
The following is an indication on how to dimension the R
1.R
2. R
where - I
≤ 600mV / (I
GND
≥ (- VCC) / (- I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
maximum rating section of the device datasheet.
Power Dissipation in R
P
= (- VCC)2/ R
D
GND
GND
(when V
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
S(on)max
* R
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
16/34
resistor.
GND
< 0: during reverse battery situations) is:
S(on)max
becomes the sum of the
) in the input thresholds and the status output
.
VN920Application information
3.1.2 Solution 2: diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈ 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
if the device drives an
GND
prot
) in line to
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
≤ 65kΩ.
= - 100V and I
latchup
=10kΩ .
prot
≥ 20mA; V
OHµC
≥ 4.5V
17/34
Application informationVN920
3.4
P2PAK
Figure 20.
LMAX (A)
I
maximum demagnetization energy (VCC = 13.5V)
P2PAK
100
10
1
maximum turn-off current versus inductance
A
B
C
0.010.1110100
L(mH)
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0 Ω. In case of repetitive pulses, T
L
(at beginning of each
jstart
t
18/34
VN920Application information
3.5 SO-16L maximum demagnetization energy (V
Figure 21. SO-16L maximum turn-off current versus inductance
= 13.5V)
CC
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0 Ω. In case of repetitive pulses, T
L
(at beginning of each
jstart
t
19/34
Package and PCB thermal dataVN920
4 Package and PCB thermal data
4.1 SO-16L thermal data
Figure 22. SO-16L PC board
Note:Layout condition of R
thickness = 2mm, Cu thickness = 35µm, Copper areas: 0.5cm
Figure 23. SO-16L R
RTH j-amb (°C/W)
70
65
60
55
50
45
40
01234567
and Zth measurements (PCB FR4 area = 41mm x 48mm, PCB
th
thj-amb
Vs PCB copper area in open box free air condition
2
, 6cm2).
PC B C u heats ink area (cm^2)
20/34
VN920Package and PCB thermal data
Figure 24. SO-16L thermal impedance junction ambient single pulse
Equation 1
Z
THδ
where
: pulse calculation formula
R
TH
δ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 25. Thermal fitting model of a single channel HSD in SO-16L
Tj
C1
R1R2
Pd
C2
C3
R3
C4
R4
T_amb
C5
R5
C6
R6
21/34
Package and PCB thermal dataVN920
Table 13.SO-16L thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.02
R2 (°C/W)0.1
R3 (°C/W)2.2
R4 (°C/W)12
R5 (°C/W)15
R6 (°C/W)3520
C1 (W.s/°C)0.0015
C2 (W.s/°C)7E-03
C3 (W.s/°C)1.5E-02
C4 (W.s/°C)0.14
C5 (W.s/°C)1
C6 (W.s/°C)58
4.2 P2PAK t h e r m al da t a
Figure 26. P2PAK P C b oa r d
Note:Layout condition of R
thickness = 2 mm, Cu thickness = 35µm , Copper areas: 0.97cm
and Zth measurements (PCB FR4 area = 60mm x 60mm, PCB
th
2
, 8cm2).
22/34
VN920Package and PCB thermal data
0
)
Figure 27. P2PAK R
RTHj_amb (°C/W)
55
50
45
40
35
30
024681
Vs. PCB copper area in open box free air condition
thj-amb
Tj-Tamb=50°C
PCB Cu heatsink area (cm^2
2
Figure 28. P
PAK thermal impedance junction ambient single pulse
ZT H (°C /W)
1000
100
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
0.97 cm
6 cm
2
2
23/34
Package and PCB thermal dataVN920
Equation 2: pulse calculation formula
Z
THδ
where δ = t
R
TH
/T
P
δ Z
THtp
1 δ–()+⋅=
Figure 29. Thermal fitting model of a single channel HSD in P
Table 14.P2PAK thermal parameter
Area/island (cm2)0.976
R1 (°C/W)0.02
2
PAK
R2 (°C/W)0.1
R3 (°C/W)0.22
R4 (°C/W)4
R5 (°C/W)9
R6 (°C/W)3722
C1 (W·s/°C)0.0015
C2 (W·s/°C)0.007
C3 (W·s/°C)0.015
C4 (W·s/°C)0.4
C5 (W·s/°C)2
C6 (W·s/°C)35
24/34
VN920Package and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Figure 30. SO-16L package dimensions
Table 15.SO-16L mechanical data
DIM.
Min.Typ.Max.
A2.65
a10.10.2
a22.45
b0.350.49
b10.230.32
C0.5
c145° (typ.)
mm.
25/34
Package and packing informationVN920
Table 15.SO-16L mechanical data (continued)
mm.
DIM.
Min.Typ.Max.
D10.110.5
E10.010.65
e1.27
e38.89
F7.47.6
L0.51.27
M0.75
S8° (max.)
5.2 PENTAWATT mechanical data
Figure 31. PENTAWATT package dimensions
26/34
VN920Package and packing information
Table 16.PENTAWATT mechanical data
mm
Dim.
Min.Typ.Max.
A4.8
C1.37
D2.42.8
D11.21.35
E0.350.55
F0.81.05
F111.4
G3.23.43.6
G16.66.87
H210.4
H310.0510.4
L17.85
L115.75
L221.4
L322.5
L52.63
L615.115.8
L766.6
M4.5
M14
Diam.3.653.85
27/34
Package and packing informationVN920
5.3 P2PAK mechanical data
Figure 32. P2PAK package dimensions
28/34
P010R
VN920Package and packing information
Table 17.P2PAK mechanical data
mm
Dim.
Min.Typ.Max.
A4.304.80
A12.402.80
A20.030.23
b0.801.05
c0.450.60
c21.171.37
D8.959.35
D28.00
E10.0010.40
E18.50
e3.203.60
e16.607.00
L13.7014.50
L21.251.40
L30.901.70
L51.552.40
R
0.40
V20º8º
Package weight1.40 Gr (typ)
29/34
Package and packing informationVN920
5.4 SO-16L packing information
Figure 33. SO-16L tube shipment (no suffix)
Base Q.ty50
Bulk Q.ty1000
C
B
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
A
All dimensions are in mm.
Figure 34. SO-16L tape and reel shipment (suffix “TR”)
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Document reformatted and restructured.
Added content, list of figures and tables.
®
Added ECOPACK
Updated Figure 37.: P
packages information.
2
PAK tape and reel (suffix “13TR”): changed
component spacing (P) in tape dimensions table from 16 mm to 12
mm.
33/34
VN920
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