The VN800PS-E is monolithic device made by
using STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes. Active current
limitation combined with thermal shutdown and
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection.
pin voltage clamp protects the device
CC
This device is especially suitable for industrial
applications in norms conformity with IEC1131
(Programmable Controllers International
Standard).
1. When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35 µm thick) connected to all VCC pins.
2. When mounted on FR4 printed circuit board with 2 cm
Value
SO-8
Thermal resistance junction-lead max30°C/W
(1)
Thermal resistance junction-ambient max
2
of copper area (at least 35 µm thick).
93
82
(2)
Unit
°C/W
°C/W
Doc ID 15610 Rev 37/27
Electrical specificationsVN800PS-E
2.3 Electrical characteristics
Values specified in this section are for 8 V< VCC<36V; -40°C<Tj< 150 °C, unless
otherwise stated.
Table 5.Power
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
CC
V
USD
V
OV
R
ON
I
S
I
LGND
I
L(off1)
I
L(off2)
I
L(off3)
Table 6.Switching (VCC = 24 V)
Operating supply
voltage
5.536V
Undervoltage shutdown345.5V
Overvoltage shutdown3642V
I
On-state resistance
OUT
I
OUT
Off-state; V
Supply current
On-state; V
On-state; V
V
Output current at turn-off
CC=VSTAT=VIN=VGND
V
OUT
Off-state output currentVIN=V
V
Off-state output current
Off-state output current
IN=VOUT
Tj=125°C
V
IN=VOUT
Tj=25°C
= 0.5 A; Tj=25°C
=0.5A
=24V; T
CC
=24V
CC
=24V; T
CC
case
case
=25°C
= 100 °C
10
1.5
=24V;
=0V
=0V050µA
OUT
=0V; VCC=13V;
=0V; VCC=13V;
135
270mΩmΩ
20
3.5
2.6
1mA
5µA
3µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
=48Ω from VIN rising edge to
R
L
=2.4V
V
OUT
=48Ω from VIN falling edge to
R
L
= 21.6 V
V
OUT
=48Ω from V
R
L
= 19.2 V
V
OUT
OUT
=2.4V to
-10-µs
-40-µs
See
-
relative
-V/µs
diagram
dV
t
t
OUT
d(on)
d(off)
/dt
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
(on)
µA
mA
mA
=48Ω from V
R
dV
/dt
OUT
Table 7.Input pin
Turn-off voltage slope
(off)
V
L
OUT
=2.4V
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
INL
I
INL
V
INH
Input low level-1.25V
Low level input currentVIN=1.25V1-µA
Input high level3.25-V
8/27 Doc ID 15610 Rev 3
=21.6V to
OUT
-
See
relative
diagram
-V/µs
VN800PS-EElectrical specifications
Table 7.Input pin (continued)
SymbolParameterTest conditionsMin.Typ. Max.Unit
I
INH
V
I(hyst)
I
IN
Table 8.VCC - output diode
High level input currentVIN=3.25 V-10µA
Input hysteresis voltage0.5-V
Input currentVIN=VCC= 36 V -200µA
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
F
Table 9.Status pin
Forward on voltage-I
= 0.6 A; Tj= 150 °C--0.6V
OUT
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
STAT
I
LSTAT
C
STAT
Table 10.Protections
Status low output voltage I
=1.6 mA--0.5V
STAT
Status leakage currentNormal operation; V
Status pin input
capacitance
(1)
Normal operation; V
STAT=VCC
STAT
=36V--10µA
=5V--30pF
SymbolParameterTest conditionsMin.Typ. Max.Unit
T
TSD
T
R
T
hyst
T
SDL
I
lim
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals
must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must
limit the duration and number of activation cycles.
Shutdown temperature150175200°C
Reset temperature135°C
Thermal hysteresis715°C
Status delay in overload
condition
DC short circuit currentVCC=24V; R
Turn-off output clamp voltageI
T
j>Tjsh
=10mΩ0.72A
LOAD
=0.5A; L=6mHVCC-47 VCC-52 VCC-57V
OUT
20µs
Doc ID 15610 Rev 39/27
Electrical specificationsVN800PS-E
Figure 4.Status timing
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ConditionsInputOutputStatus
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Current limitation
Over temperature
Undervoltage
Overvoltage
L
H
L
H
H
L
H
L
H
L
H
L
H
L
X
X
L
L
L
L
L
L
(T
(T
< T
j
> T
j
H
H
H
H
L
X
X
H
H
TSD
TSD
) H
) L
10/27 Doc ID 15610 Rev 3
VN800PS-EElectrical specifications
Figure 5.Switching time waveforms
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Doc ID 15610 Rev 311/27
Electrical specificationsVN800PS-E
Table 12.Electrical transient requirements on VCC pin (part 1/3)
ISO T/R 7637/1
Test levels
test pulse
IIIIIIIV
1-25 V-50 V-75 V-100 V2 ms, 10 Ω
2+25 V+50 V+75 V+100 V0.2 ms, 10 Ω
3a-25 V-50 V-100 V-150 V0.1 µs, 50 Ω
3b+25 V+50 V+75 V+100 V0.1 µs, 50 Ω
4-4 V-5 V-6 V-7 V100 ms, 0.01
5+26.5 V+46.5 V+66.5 V+86.5 V400 ms, 2
Table 13.Electrical transient requirements on VCC pin (part 2/3)
ISO T/R 7637/1
Test pulse
IIIIIIIV
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
Test levels results
Delays and
impedance
Ω
Ω
5C E E E
Table 14.Electrical transient requirements on VCC pin (part 3/3)
ClassContents
C
E
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after
exposure to disturbance and cannot be returned to proper operation without
replacing the device.
12/27 Doc ID 15610 Rev 3
VN800PS-EElectrical specifications
Figure 6.Peak short circuit current test circuit
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Doc ID 15610 Rev 313/27
Electrical specificationsVN800PS-E
Figure 8.Waveforms
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14/27 Doc ID 15610 Rev 3
VN800PS-EApplication information
3 Application information
Figure 9.Application schematic
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3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1) R
2) R
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSD. Please note that the value of this
resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not common with the device ground then
the R
values. This shift varies depending on many devices are on in the case of several high side
drivers sharing the same R
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
GND
= (-VCC)2/R
D
produces a shift (I
GND
S(on)max
GND
)
)
is the DC reverse ground pin current and can be found in the absolute
(when VCC< 0: during reverse battery situations) is:
GND
GND
S(on)max
GND
* R
.
) in the input thresholds and the status output
GND
only)
GND
GND
S(on)max
/
'*1'
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resistor.
becomes the sum of the
Doc ID 15610 Rev 315/27
Application informationVN800PS-E
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then the ST suggests to utilize Solution 2 (see Section 3.1.2).
3.1.2 Solution 2: diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSD. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and the status output values if the microprocessor ground is not common with the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Series resistor in input and status lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused input and status pin is to leave them unconnected.
3.2 Microcontroller I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak/Ilatchup
Calculation example:
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
if the device is driving an
GND
) in line to prevent
prot
For V
CCpeak
5k Ω ≤ R
Recommended R
= -100 V and I
≤ 65 kΩ.
prot
latchup
value is 10 kΩ.
prot
≥ 20 mA; V
OHµC
≥ 4.5 V
16/27 Doc ID 15610 Rev 3
VN800PS-EApplication information
)
3.3 Electrical characteristics curves
Figure 10. Off-state output currentFigure 11. High level input current
IL(off1) (µA)
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
-50 -250255075 100 125 150 175
Off state
Vcc=36V
Vin=Vout=0V
Tc (ºC)
Iih (µA)
8
7
Vin=3.25V
6
5
4
3
2
1
0
-50 -250255075100 125 150 175
Tc (ºC)
Figure 12. Status leakage currentFigure 13. On-state resistance vs T
Ilstat (µA)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Vstat=Vcc=36V
0
-50 -250255075 100 125 150 175
Tc (ºC)
Figure 14. On-state resistance vs V
CC
Ron (mOhm)
400
350
300
250
200
150
100
50
0
5 10152025303540
Iout=0.5A
Tc= 150ºC
Tc= 25ºC
Tc= - 40ºC
Vcc (V)
Ron (mOhm)
400
350
300
250
200
150
100
50
0
-50 -250255075100 125 150 175
Iout=0.5A
Vcc=8V; 13V; 36V
Tc (ºC)
Figure 15. Input high level
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -250255075100 125 150 175
Tc (°C
case
Doc ID 15610 Rev 317/27
Application informationVN800PS-E
Figure 16. Input low levelFigure 17. Turn-on voltage slope
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -2502 55075 100 125 150 175
Tc (°C)
dVout/dt(on) (V/ms)
1600
1400
1200
1000
800
600
400
200
Vcc=24V
Rl=48Ohm
0
-50 -250255075 100 125 150 175
Tc (ºC)
Figure 18. Overvoltage shutdownFigure 19. Input hysteresis voltage
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075100 125 150 175
Tc (°C)
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075100 125 150 175
Tc (°C)
Figure 20. Turn-off voltage slopeFigure 21. I
dVout/dt(off) (V/ms)
800
700
600
500
400
300
200
100
18/27 Doc ID 15610 Rev 3
Vcc=24V
Rl=48Ohm
0
-50 -250255075100 125 150 175
Tc (ºC)
vs T
LIM
case
Ilim (A)
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
-50 -250255075100 125 150 175
Vcc=24V
Rl=10mOhm
Tc (ºC)
VN800PS-EApplication information
3.4 SO-8 maximum demagnetization energy
Figure 22. SO-8 maximum turn off current versus load inductance
LMAX (A)
I
10
A
1
0.1
1101001000
L(mH)
B
C
Note:Legend
A = Single pulse at T
B = Repetitive pulse at T
C = Repetitive Pulse at T
Jstart
= 150 ºC
=100ºC
Jstart
= 125 ºC
Jstart
Conditions:
V
=13.5V
CC
Values are generated with R
In case of repetitive pulses, T
=0Ω
L
(at beginning of each demagnetization) of every pulse
jstart
must not exceed the temperature specified above for curves B and C.
Figure 23. Demagnetization
,
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Doc ID 15610 Rev 319/27
Package and PCB thermal dataVN800PS-E
4 Package and PCB thermal data
4.1 SO-8 thermal data
Figure 24. SO-8 PC board
1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,
Cu thickness = 35 µm, Copper areas: 0.14 cm2, 2 cm2).
Figure 25. SO-8 R
thj-amb
(1)
vs PCB copper area in open box free air condition
20/27 Doc ID 15610 Rev 3
VN800PS-EPackage and PCB thermal data
Figure 26. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
2
100
0.5 cm
2 cm
2
10
1
0.1
0.00010.0010.010.11101001000
Time (s)
Figure 27. Thermal fitting model of a single channel HSD in SO-8
Tj
C1
R1R2
Pd
C2
C3
R3
C4
R4
C5
R5
C6
R6
T_amb
Equation 1 Pulse calculation formula
Z
THδ
R
TH
δZ
THtp
1 δ–()+⋅=
where
δt
T⁄=
p
Doc ID 15610 Rev 321/27
Package and PCB thermal dataVN800PS-E
Table 15.Thermal parameter
Area/island (cm2)0.142
R1 (°C/W)0.24
R2 (°C/W)1.2
R3 (°C/W)4.5
R4 (°C/W)21
R5 (°C/W)16
R6 (°C/W)5828
C1 (W.s/°C)0.00015
C2 (W.s/°C)0.0005
C3 (W.s/°C)7.50E-03
C4 (W.s/°C)0.045
C5 (W.s/°C)0.35
C6 (W.s/°C)1.052
22/27 Doc ID 15610 Rev 3
VN800PS-EPackage and packing information
5 Package and packing information
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 SO-8package information
Table 16.SO-8 mechanical data
Dim.
Min. Typ. Max.
A 1.75
a1 0.10.25
a2 1.65
a30.650.85
b 0.35 0.48
b10.190.25
C0.250.5
mm
c145
D4.8 5
E 5.8 6.2
e1.27
e3 3.81
F3.84
L 0.4 1.27
M0.6
S8
L10.81.2
Doc ID 15610 Rev 323/27
Package and packing informationVN800PS-E
Figure 28. SO-8 package dimensions
0016023 D
24/27 Doc ID 15610 Rev 3
VN800PS-EPackage and packing information
5.3 SO-8packing information
The devices can be packed in tube or tape and reel shipments (see the Device summary on
page 1).
Figure 29. SO-8 tube shipment (no suffix)
B
C
A
Figure 30. SO-8 tape and reel shipment (suffix “TR”)
Base Q.ty100
Bulk Q.ty2000
Tube length (± 0.5)532
A3.2
B6
C (± 0.1)0.6
All dimensions are in mm.
REEL DIMENSIONS
Base Q.ty2500
Bulk Q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Updated Table 3: Absolute maximum ratings.
Reformatted entire document.
Updated Features list.
Updated following tables:
– Table 4: Thermal data
– Table 16: SO-8 mechanical data
26/27 Doc ID 15610 Rev 3
VN800PS-E
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