1. Total resistance of one side in bridge configuration
2. Typical current limitation value
DS(on)
(1)
I
OUT
9A
(2)
VCC
36 V
VN771KP-E
Quad smart power solid state relay
for complete H-bridge configurations
■ ECOPACK
■ Automotive Grade: compliance with AEC
®
: lead free and RoHS compliant
guidelines
■ Suited as low voltage bridge
■ Linear current limitation
■ Very low standby power dissipation
■ Short circuit protected
■ Status flag diagnostic (open drain)
■ Integrated clamping circuits
■ Undervoltage protection
■ ESD protection
Description
The VN771KP-E is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower
Table 1.Device summary
™
M0-3 Technology.
SO-28
This device is suitable to drive a DC motor in a
bridge configuration as well as to be used as a
quad switch for any low voltage application.
The dual high side switches have built-in thermal
shutdown to protect the chips from over
temperature and current limiter blocks to protect
the device from short circuit. Status output is
provided to indicate open load in off and on-state
and over temperature.
The low side switches are two OMNIFET II types
(fully auto protected Power MOSFET in VIPower
™
technology). They have built-in thermal shutdown,
linear current limitation and overvoltage clamping.
Fault feedback for thermal intervention can be
detected by monitoring the voltage at the input
pin.
16, 17 SOURCE 4 Source of switch 4 (low-side switch)
20, 21 SOURCE 2 Source of switch 2 (high-side switch)
22, 23 SOURCE 1 Source of switch 1 (high-side switch)
26, 27 SOURCE 3 Source of switch 3 (low-side switch)
Figure 2.Connection diagram
Doc ID 018896 Rev 17/34
Electrical specificationsVN771KP-E
2 Electrical specifications
2.1 Thermal data
Table 3.Thermal data
Symbol Parameter
R
thj-case
R
thj-case
R
thj-amb
Thermal resistance junction-case (high side switch) 20
Thermal resistance junction-case (low side switch) 20
Thermal resistance junction-ambient (with 6 cm2 of Cu heat sink) See Figure 49
2.2 Absolute maximum ratings
Table 4.Dual high side switch
Symbol Parameter Value Unit
V
DC supply voltage 41 V
CC
-V
-I
GND
I
OUT
-I
OUT
I
I
STAT
V
ESD
Reverse DC supply voltage -0.3 V
CC
DC reverse ground pin current -200 mA
DC output current Internally limited A
Reverse DC output current -6 A
DC input current ±10 mA
IN
DC status current ±10 mA
Electrostatic discharge (human body model:
R = 1.5KΩ; C = 100pF)
– Input
– Status
– Output
CC
–V
4000
4000
5000
5000
Value max
(°C/W)
V
V
V
V
P
T
T
Table 5.Low side switch
Power dissipation (TC =25°C) 6 W
tot
Junction operating temperature Internally limited °C
T
j
Case operating temperature -40 to 150 °C
c
Storage temperature -55 to 150 °C
stg
Symbol Parameter Value Unit
V
Drain source voltage (V
DS
Input voltage Internally clamped V
V
IN
I
Input current ± 20 mA
IN
= 0V) Internally clamped V
IN
8/34Doc ID 018896 Rev 1
VN771KP-EElectrical specifications
Table 5.Low side switch (continued)
Symbol Parameter Value Unit
R
Minimum input series impedance 10 Ω
IN MIN
I
Drain current Internally limited A
D
Reverse DC output current -15 A
R
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) 4000 V
Electrostatic discharge on output pin only (human
body model: R = 330 Ω, C = 150 pF)
5000 V
V
ESD1
V
ESD2
I
P
T
T
Power dissipation (TC = 25 °C) 6 W
tot
Operating junction temperature Internally limited °C
T
j
Case operating temperature Internally limited °C
c
Storage temperature -55 to 150 °C
stg
2.3 Electrical characteristics for dual high side switch
8V < VCC< 36 V; -40 °C < Tj < 150 °C, unless otherwise specified.
Table 6.Power outputs (for each channel)
Symbol Parameter Test conditions Min Typ Max Unit
Operating
(1)
V
CC
supply voltage
Undervoltage
(1)
V
USD
V
R
I
I
L(off1)
I
L(off2)
shutdown
Overvoltage
(1)
OV
shutdown
On-state
ON
resistance
(1)
Supply current
S
Off-state output
current
Off-state output
current
=2A; Tj =25°C
I
OUT
I
=2A; VCC >8V
OUT
Off-state; VCC = 13 V; VIN =V
Off-state; V
= 13V; VIN =V
CC
Tj =25°C
On-state; V
=V
V
IN
VIN =0V; V
= 13 V;
CC
=0V; VCC = 36 V; Tj= 125 °C 0 -50 µA
OUT
= 3.5 V -75 -0 µA
OUT
OUT
OUT
=0V
=0V;
5.5 13 36 V
3 4 5.5 V
36 --V
--
12
12
-
5
60
120
40
25
7
mΩ
mΩ
µA
µA
mA
I
L(off3
I
L(off4)
1. For device.
Off-state output
)
current
Off-state output
current
=V
V
IN
Tj = 125°C
=V
V
IN
Tj = 25 °C
=0V; VCC = 13 V;
OUT
=0V; VCC = 13 V;
OUT
--5 µA
--3 µA
Doc ID 018896 Rev 19/34
Electrical specificationsVN771KP-E
Table 7.Switching (for each channel) (VCC= 13V)
Symbol Parameter Test conditions Min Typ Max Unit
R
=6.5Ω from VIN rising edge
t
Turn-on delay time
d(on)
t
d(off)
/dt
dV
OUT
dV
/dt
OUT
Table 8.Logic input (for each channel)
Turn-off delay time
Turn-on voltage
(on)
slope
Turn-off voltage
(off)
slope
Symbol Parameter Test conditions Min Typ Max Unit
V
Input low level --1.25 V
IL
I
Low level input current VIN = 1.25 V 1 --µA
IL
VIH Input high level 3.25 --V
L
to V
R
edge to V
RL = 6.5 Ω from V
to V
RL =6.5 Ω from V
to V
= 1.3 V
OUT
= 6.5 Ω from VIN falling
L
OUT
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
-30 -µs
-30 -µs
See relative
-
See relative
-
diagram
diagram
-V/µs
-V/µs
IIH High level input current VIN = 3.25 V --10 µA
V
I(hyst)
V
Table 9.Status pin (for each channel)
Input hysteresis voltage 0.5 --V
Input clamp voltage
ICL
IIN = 1 mA
= -1 mA
I
IN
6.8
6
-0.7
8 V
V
Symbol Parameter Test conditions Min Typ Max Unit
V
STAT
I
LSTAT
C
V
Table 10.Protections (for each channel)
Status low output
voltage
I
STAT
Status leakage current Normal operation; V
Status pin input
STAT
capacitance
Status clamp voltage
SCL
Normal operation; V
I
STAT
I
STAT
= 1.6 mA --0.5 V
= 5 V --10 µA
STAT
= 5 V --100 pF
STAT
= 1 mA
= -1 mA
6.8
6
-0.7
8V
V
Symbol Parameter Test conditions Min Typ Max Unit
T
T
T
Shutdown temperature 150 175 200 °C
TSD
Reset temperature 135 --°C
R
Thermal hysteresis 7 15 -°C
hyst
10/34Doc ID 018896 Rev 1
VN771KP-EElectrical specifications
Table 10.Protections (for each channel) (continued)
Symbol Parameter Test conditions Min Typ Max Unit
t
V
demag
SDL
I
Status delay in
overload conditions
Current limitation Tj = 125 °C
lim
Turn-off output clamp
voltage
>T
T
j
TSD
5.5 V < VCC <36V
=2A; L=6mH VCC-41 VCC-48 VCC-55 V
I
OUT
--20 µs
6
8.5
915
15
15
A
A
A
Note:To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 11.Openload detection (for each channel)
Symbol Parameter Test conditions Min Typ Max Unit
I
Openload on-state detection threshold VIN = 5 V 50 100 200 mA
OL
t
DOL(on)
V
OL
Openload on-state detection delay I
Openload off-state voltage detection
threshold
= 0 A --200 µs
OUT
= 0 V 1.5 2.5 3.5 V
V
IN
t
DOL(off)
Openload detection delay at turn-off --1000 µs
2.4 Electrical characteristics for low side switches
-40 °C < Tj < 150 °C, unless otherwise specified.
Table 12.Off-state
Symbol Parameter Test conditions Min Typ Max Unit
V
Drain source clamp voltage VIN =0V; ID = 7 A 40 45 55 V
CLAMP
V
CLTH
V
I
INTH
Drain source clamp
threshold voltage
Input threshold voltage VDS =VIN; ID = 1 mA 0.5 -2.5 V
Supply current from input pin VDS =0V; VIN = 5 V -100 150 µA
ISS
=0V; ID = 2 mA 36 --V
V
IN
Doc ID 018896 Rev 111/34
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