Single channel high side driver for automotive applications
Features
Max transient supply voltageV
Operating voltage rangeV
Max On-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– Open Drain status output
– On-state open load detection
– Off-state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
Description
The VN5E160S-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
SO-8 package.
The VN5E160S-E is designed to drive automotive
grounded loads delivering protection, diagnostics
and easy 3V and 5V CMOS-compatible interface
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with autorestart and over-voltage active clamp.
A dedicated active low digital status pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground, over-temperature indication, short-circuit
to V
diagnosis and ON & OFF state open-load
CC
detection.
The diagnostic feedback of the whole device can
be disabled by pulling the STAT_DIS pin up, thus
allowing wired-ORing with other similar devices.
Ground connection. Must be reverse battery protected by an external
diode/ resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
STATUSOpen Drain digital diagnostic pin.
STAT_DIS
Active high CMOS compatible pin, to disable the STATUS pin.
5/34
Block diagram and pin configurationVN5E160S-E
Figure 2.Configuration diagram (top view)
V
CC
OUTPUT
OUTPUT
V
CC
5
6
7
8
4
3
2
1
STAT_DIS
STATUS
INPUT
GND
SO-8
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInputSTAT_DIS
FloatingXXXXX
To ground
Not
allowed
X
Not
allowed
Through 10KΩ
resistor
Through 10KΩ
resistor
6/34
VN5E160S-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
V
CC
V
S
V
F
CC
I
SD
V
Note:V
= V
F
SD
- VCC during reverse battery condition.
OUT
I
IN
V
IN
INPUT
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in the “Absolute maximum
ratings” tables for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and others relevant quality documents.
Table 3.Absolute maximum ratings
GND
OUTPUTSTAT_DIS
STATUS
I
GND
I
OUT
I
STAT
V
STAT
V
OUT
SymbolParameterValueUnit
V
- V
- I
I
- I
I
STAT
I
STAT_DIS
E
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
OUT
Reverse DC output current 6A
OUT
I
DC input current+10 / -1mA
IN
DC status current+10 / -1mA
DC status disable current+10 / -1mA
Maximum switching energy (single pulse)
MAX
(L=8 mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
36mJ
7/34
Electrical specificationsVN5E160S-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human body model: R=1.5KΩ;
C=100pF)
Values specified in this section are for 8V<VCC<28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
I
L(off1)
1. PowerMOS leakage included.
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
=1A; Tj=25°C
OUT
On state resistance
ON
Clamp voltageIS=20 mA414652V
clamp
I
Supply current
S
Off state output current
Output - VCC diode
V
F
voltage
I
=1A; Tj=150°C
OUT
=1A; VCC=5V; Tj=25°C
I
OUT
Off State; V
=25°C
T
j
CC
On State; VIN=5V; VCC=13V;
=0A
I
OUT
V
IN=VOUT
V
IN=VOUT
-I
OUT
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C00
=0.6A; Tj=150°C0.7V
Table 6.Switching (VCC=13V; Tj=25°C)
=13V; VIN=V
OUT
=0V;
0.5V
160
mΩ
320
mΩ
210
mΩ
(1)
2
1.9
(1)
5
3.5µAmA
0.0135µA
µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
=13Ω
R
L
(see Figure 6.)
=13Ω
R
L
(see Figure 6.)
RL=13Ω
(see Figure 6.)
RL=13Ω
(see Figure 6.)
10µs
15µs
See
Figure 26.
See
Figure 28.
70µJ
40µJ
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
/dt
/dt
ON
OFF
Turn-On delay time
Turn-Off delay time
Turn-On voltage slopeRL=13Ω
(on)
Turn-Off voltage slopeRL=13Ω
(off)
Switching energy losses
during t
won
Switching energy losses
during t
woff
V/µs
V/µs
9/34
Electrical specificationsVN5E160S-E
Table 7.Status pin (VSD=0)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
STAT
I
LSTAT
C
STAT
V
Table 8.Protection
Status low output
voltage
Status leakage current
Status pin input
capacitance
Status clamp voltage
SCL
(1)
= 1.6 mA, VSD=0V0.5V
I
STAT
Normal operation or V
= 5V
V
STAT
SD
=5V,
Normal operation or VSD=5V,
V
= 5V
STAT
I
STAT
I
STAT
= 1mA
= - 1mA
5.5
-0.7
10µA
100pF
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
T
limH
I
limL
TSD
T
T
DC short circuit
current
Short circuit current
during thermal cycling
V
=13V; 5V<VCC<28V
CC
=13V; TR<Tj<T
V
CC
TSD
Shutdown
temperature
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of
RS
STATUS
7101414A
2.5A
150175200°C
135°C
V
A
T
HYST
t
SDL
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Thermal hysteresis
(T
TSD-TR
Status delay in
overload conditions
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
)
T
I
OUT
I
OUT
(see Figure 4)20µs
j>TTSD
=1A; VIN=0; L=20mHVCC-41VCC-46 VCC-52V
=0.03A (see Figure 5.)
Tj= -40°C...+150°C
7°C
25mV
10/34
VN5E160S-EElectrical specifications
Table 9.Open load detection (8V<VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
DOL(on)
t
DSTKON
I
L(off2)
td_vol
I
t
POL
V
Open load ON state
OL
detection threshold
Open load ON state
detection delay
Delay between INPUT
falling edge and
STATUS rising edge in
open load condition
Open load OFF state
voltage detection
OL
threshold
Output short circuit to
Vcc detection delay at
turn-off
Off state output current
Delay response from
output rising edge to
STATUS falling edge in
open load
VIN = 5V 1040mA
I
= 0A, VCC=13V
OUT
(see Figure 4)
= 0A (see Figure 4)2005001200µs
I
OUT
200µs
VIN = 0V24V
See Figure 4180t
= 0V; V
V
IN
(see Section 3.4: Open
OUT
= 4V
-750µA
POL
µs
load detection in Off state)
V
IN
= 0V; V
= 4V20µs
OUT
Table 10.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
V
I
SDL
V
I
SDH
V
SD(hyst)
V
SDCL
Input low level0.9V
IL
I
Low level input currentVIN = 0.9V1µA
IL
Input high level2.1V
IH
High level input currentVIN = 2.1V10µA
I
IH
Input hysteresis voltage0.25V
I
= 1mA
Input clamp voltage
ICL
STAT_DIS low level voltage0.9V
SDL
IN
= -1mA
I
IN
5.5
-0.7
Low level STAT_DIS currentVSD=0.9V1µA
STAT_DIS high level voltage2.1V
SDH
High level STAT_DIS
current
V
=2.1V10µA
SD
STAT_DIS hysteresis voltage0.25V
STAT_DIS clamp voltage
ISD=1mA
=-1mA
I
SD
5.5
-0.7
7V
7V
V
V
11/34
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