Single-channel high-side driver with analog current sense
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistance R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
LIMH
CC
CC
ON
S
41 V
4.5 V to 28V
50 mΩ
27 A
(1)
2 µA
VN5E050MJ-E
for automotive applications
PowerSSO-12
– Electrostatic discharge protection
Application
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with auto
restart (thermal shutdown)
– Reverse battery protected (see Figure 29)
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E050MJ-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny PowerSSO-12 package. The VN5E050MJ-E
is designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation and overtemperature
indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
CSAnalog current sense pin, delivers a current proportional to the load current.
CS_DISActive high CMOS compatible pin, to disable the current sense pin.
Doc ID 16611 Rev 15/35
Block diagram and pin descriptionVN5E050MJ-E
Figure 2.Configuration diagram (top view)
TAB = Vcc
N.C.
GND
IN
CS
CS_DIS
N.C.
Table 2.Suggested connections for unused and not connected pins
Connection /
pin
FloatingNot allowedXXXX
Current senseN.C.OutputInputCS_DIS
1
2
3
4
5
6
12
11
10
9
8
7
N.C.
OUT
OUT
OUT
OUT
N.C.
To ground
Through 1 KΩ
resistor
X
Through 22 KΩ
resistor
Through 10 KΩ
resistor
Through 10 KΩ
resistor
6/35Doc ID 16611 Rev 1
VN5E050MJ-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
V
CSD
I
CSD
V
CC
I
GND
OUT
CS
CS_DIS
I
IN
IN
IN
GND
I
SENSE
V
SENSE
VF
I
OUT
V
OUT
V
CC
Note:V
F
= V
- VCC during reverse battery condition.
OUT
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
- I
I
-I
CSENSE
V
CSENSE
E
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
OUT
Reverse DC output current20A
OUT
DC input current-1 to 10mA
I
IN
DC current sense disable input current-1 to 10mA
CSD
DC reverse CS pin current200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L= 3mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
V
- 41 to
CC
+V
CC
104mJ
V
Doc ID 16611 Rev 17/35
Electrical specificationsVN5E050MJ-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
T
– INPUT
– CURRENT SENSE
–CS_DIS
–OUTPUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)2.7°C/W
Thermal resistance junction-ambient See Figure 33 °C/W
8/35Doc ID 16611 Rev 1
VN5E050MJ-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8V <VCC< 28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
I
L(off1)
1. PowerMOS leakage included.
Table 6.Switching (VCC= 13V; Tj= 25°C)
Operating supply
CC
voltage
Undervoltage shutdown3.54.5V
USD
Undervoltage
shutdown hysteresis
I
= 2A; Tj= 25°C
OUT
On-state resistance
ON
Clamp voltageIS= 20 mA414652V
clamp
I
Supply current
S
Off-state output current
Output - VCC diode
V
F
voltage
I
= 2A; Tj= 150°C
OUT
= 2A; VCC= 5V; Tj= 25°C
I
OUT
Off-state; V
VIN=V
On-state; V
VIN=V
VIN=V
-I
OUT
CC
OUT=VSENSE=VCSD
CC
=0V; VCC=13V; Tj=25°C
OUT
=0V; VCC=13V; Tj=125°C
OUT
= 2A; Tj= 150°C0.7V
=13V; Tj=25°C;
=0V
=13V; VIN=5V; I
OUT
4.51328V
2
=0A
1.5
000.013
0.5V
50
mΩ
100
mΩ
65
mΩ
(1)
(1)
5
3µAmA
µA
5
SymbolParameterTest conditionsMin.Typ.Max. Unit
Turn-on delay time RL= 6.5Ω (see Figure 5.)-20 - µs
Turn-off delay time RL= 6.5Ω (see Figure 5.)-40 - µs
/dt)onTurn-on voltage slope RL= 6.5Ω-See Figure 23-V/µs
/dt)
Turn-off voltage slope RL= 6.5Ω-See Figure 25-V/µs
off
Switching energy
losses during t
on
Switching energy
losses during t
off
RL= 6.5Ω (see Figure 5.)- 0.20 -mJ
RL= 6.5Ω (see Figure 5.)- 0.3 -mJ
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Doc ID 16611 Rev 19/35
Electrical specificationsVN5E050MJ-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
I
IL
Input high level voltage2.1V
IH
I
High level input currentVIN=2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
=1mA
IN
=-1mA
I
IN
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS current V
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
I
CSD
I
CSD
=1mA
=-1mA
(1)
5.5
-0.7
7V
V
7V
V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
I
T
T
T
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
DC short circuit current
limH
Short circuit current
limL
during thermal cycling
Shutdown temperature150175200°C
TSD
T
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of status135°C
RS
Thermal hysteresis
HYST
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
VCC= 13V
5V < V
V
CC
I
OUT
I
OUT
=-40°C to 150°C
T
j
< 28V
CC
= 13V; TR<Tj<T
TSD
= 2A; VIN=0; L= 6mHVCC-41 VCC-46 VCC-52V
=0.1A;
(see Figure 6)
192738
38
7A
7°C
25mV
A
A
10/35Doc ID 16611 Rev 1
VN5E050MJ-EElectrical specifications
Table 9.Current sense (8V<VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
K
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
V
SENSE
=0.05A; V
0
1
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
(1)
ratio drift
2
I
OUT/ISENSE
Current sense
(1)
ratio drift
3
I
OUT/ISENSE
Current sense
(1)
ratio drift
Analog sense
OUT
Tj= -40°C to 150°C1170 2000 3090
I
= 1A; V
OUT
SENSE
Tj= -40°C to 150°C
=25°C to 150°C
T
j
= 1A; V
I
OUT
= -40 °C to 150 °C
T
J
I
OUT
= -40°C to 150°C
T
j
=25°C to 150°C
T
j
= 2A; V
I
OUT
=-40 °C to 150 °C
T
J
I
= 4A; V
OUT
= -40°C to 150°C
T
j
= 25°C to 150°C
T
j
= 4A; V
I
OUT
= -40 °C to 150 °C
T
J
I
=0A; V
OUT
V
CSD
V
CSD
SENSE
= 2A; V
SENSE
SENSE
SENSE
SENSE
SENSE
=5V; VIN=0V; Tj=-40°C to 150°C
=0V; VIN=5V; Tj=-40°C to 150°C
leakage current
I
=2A; V
OUT
V
CSD
SENSE
=5V; VIN=5V; Tj=-40°C to 150°C
Open load on-
= 5V, 8V<VCC<18V
state current
detection
threshold
Max analog sense
output voltage
V
IN
I
SENSE
I
OUT
= 5 µA
= 4A; V
CSD
SENSE
=4 V; V
= 4 V; V
= 4V; V
= 4V; V
=4V; V
= 4 V; V
=0.5V;V
CSD
CSD
CSD
CSD
CSD
CSD
CSD
=0V
=0V;
=0V;
=0V;
=0V;
=0V;
=0V;
1575
2000
2750
1575
2000
2465
-1010%
1765
2000
2315
1765
2000
2155
-77%
1840
2000
2135
1840
2000
2080
-44%
=0V;
0
0
1
2
=0V;
0
1
420mA
= 0V 5V
µA
µA
µA
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
Analog sense
output voltage in
fault condition
Analog sense
output current in
fault condition
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
(2)
(2)
VCC = 13V; R
VCC = 13V; V
V
I
<4V, 0.5A<Iout<4A
SENSE
= 90% of I
SENSE
= 3.9 KΩ8V
SENSE
= 5V9mA
SENSE
SENSE max
50100µs
(see Figure 4.)
V
I
< 4V, 0.5A<Iout<4A
SENSE
= 10% of I
SENSE
SENSE max
520µs
(see Figure 4.)
Doc ID 16611 Rev 111/35
Loading...
+ 24 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.