Single channel high side driver for automotive applications
Max supply voltageV
Operating voltage rangeV
Max on-state resistance (per ch.)R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
CC
CC
ON
LIMH
S
4.5 to 28V
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– Open Drain status output
– On-state open load detection
– Off-state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Over-temperature shutdown with
autorestart (thermal shutdown)
– Reverse battery protected
(a)
– Electrostatic discharge protection
41V
50 mΩ
27A
2 µA
(1)
PowerSSO-12
Application
■ All types of resistive, inductive and capacitive
loads.
Description
The VN5E050J-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-12 package.
The VN5E050J-E is designed to drive automotive
grounded loads delivering protection, diagnostics
and easy 3V and 5V CMOS-compatible interface
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with autorestart and over-voltage active clamp.
A dedicated active low digital status pin is
associated with every output channel in order to
provide Enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground, over-temperature indication, short-circuit
to V
diagnosis and ON & OFF state open-load
CC
detection.
The diagnostic feedback of the whole device can
be disabled by pulling the STAT_DIS pin up, thus
allowing wired-ORing with other similar devices.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible.
Controls output switch state.
STATUSOpen Drain digital diagnostic pin.
STAT_DISActive high CMOS compatible pin, to disable the STATUS pin.
5/34
Block diagram and pin configurationVN5E050J-E
Figure 2.Configuration diagram (top view)
TAB = V
NC
GND
INPUT
STAT_DIS
STATUS
N.C.
1
2
3
4
5
6
12
11
10
9
8
7
cc
N.C.
OUTPUT
OUTPUT
OUTPUT
OUTPUT
N.C.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInputSTAT_DIS
FloatingXXXXX
To ground
Not
allowed
X
Not
allowed
Through 10KΩ
resistor
Through 10KΩ
resistor
6/34
VN5E050J-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
V
V
F
CC
I
SD
V
Note:V
F
= V
OUT
- V
SD
CC
I
IN
V
IN
INPUT
during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in the “Absolute maximum
ratings” tables for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and other relevant quality documents.
Table 3.Absolute maximum ratings
GND
OUTPUT STAT_DIS
STATUS
I
GND
I
OUT
I
STAT
V
STAT
V
OUT
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
-I
I
STAT
I
STAT_DIS
E
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current 15A
OUT
DC input current+10 / -1mA
I
IN
DC status current+10 / -1mA
DC status disable current+10 / -1mA
Maximum switching energy
MAX
(L=3mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
104mJ
7/34
Electrical specificationsVN5E050J-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
4000
4000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
- INPUT
- STATUS
- STAT_DIS
- OUTPUT
- V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
T
j
Storage temperature- 55 to 150°C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterValueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (max)
(with one channel ON)
Values specified in this section are for 8V<VCC<28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
I
=2A; Tj=25°C
OUT
On state resistance
ON
=2A; Tj=150°C
I
OUT
I
=2A; VCC=5V; Tj=25°C
OUT
Clamp voltageIS = 20 mA414652V
Off State; V
V
I
I
L(off1)
Supply current
S
Off state output current
IN=VOUT
On State; VIN=5V; VCC=13V;
=0A
I
OUT
V
IN=VOUT
Tj=25°C
V
IN=VOUT
Tj=125°C
V
1. PowerMOS leakage included.
Output - VCC diode voltage -I
F
=2A; Tj=150°C0.7V
OUT
Table 6.Switching (VCC=13V; Tj=25°C)
=13V;
CC
=0V; Tj=25°C
=0V; VCC=13V;
=0V; VCC=13V;
0.5V
100
(1)
2
5
3
000.013
50
65
(1)
6µAmA
5
mΩ
mΩ
mΩ
µA
µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
dV
dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn-On delay time RL=6.5Ω (see Figure 6.)20µs
Turn-Off delay time RL=6.5Ω (see Figure 6.)40µs
Turn-On voltage
/dt
(on)
slope
Turn-Off voltage
/dt
(off)
slope
Switching energy
losses during t
Switching energy
losses during twoff
=6.5Ω
R
L
=6.5Ω
R
L
RL=6.5Ω (see Figure 6.)0.21mJ
won
RL=6.5Ω (see Figure 6.)0.28mJ
See
Figure 26.
See
Figure 28.
V/µs
V/µs
9/34
Electrical specificationsVN5E050J-E
Table 7.Status pin (VSD=0V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
STAT
I
LSTAT
C
STAT
V
Table 8.Protections
Status low output
voltage
Status leakage current
Status pin input
capacitance
Status clamp voltage
SCL
= 1.6 mA, VSD=0V0.5V
I
STAT
Normal operation or V
= 5V
V
STAT
Normal operation or VSD=5V,
V
= 5V
STAT
I
= 1mA
STAT
I
= - 1mA
STAT
(1)
SD
=5V,
5.5
10µA
100pF
7V
-0.7
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
T
T
HYST
t
SDL
V
DEMAG
DC short circuit
current
Short circuit current
during thermal cycling
=13V; 5V<VCC<28V
V
CC
=13V; TR<Tj<T
V
CC
TSD
Shutdown temperature150175200°C
Reset temperature
R
Thermal reset of
RS
STATUS
Thermal hysteresis
(T
Status delay in
overload conditions
Turn-off output voltage
clamp
TSD-TR
)
T
I
OUT
( see Figure 4.)20µs
j>TTSD
=2A; VIN=0; L=6mH
192738
38
7A
TRS + 1
TRS + 5
135°C
7°C
VCC-41
VCC-46
VCC-52
V
A
A
°C
V
=0.1A;
I
V
Output voltage drop
ON
limitation
OUT
Tj= -40°C...+150°C
(see Figure 5.)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/34
25mV
VN5E050J-EElectrical specifications
Table 9.Open load detection (8V<VCC<18V)
SymbolParameterTest conditionsMinTypMaxUnit
I
OL
t
DOL(on)
t
POL
V
OL
t
DSTKON
I
L(off2)
td_vol
Openload ON state
detection threshold
Openload ON state
detection delay
Delay between INPUT
falling edge and
STATUS rising edge in
openload condition
Openload OFF state
voltage detection
threshold
Output short circuit to
VCC detection delay at
turn Off
Off state output
current
Delay response from
output rising edge to
STATUS falling edge in
open load
VIN = 5V1070mA
I
= 0A, VCC=13V
OUT
(see Figure 4.)
= 0A (see Figure 4.)2005001200µs
I
OUT
VIN = 0V24V
See Figure 4. 180t
V
= 0V; V
IN
(see Section 3.4: Open load
OUT
= 4V
-750µA
detection in Off state)
V
IN
= 0V; V
= 4V20µs
OUT
200µs
POL
µs
Table 10.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
V
I
SDL
V
I
SDH
V
SD(hyst)
V
SDCL
Input low level0.9V
IL
I
Low level input currentVIN =0.9 V1µA
IL
Input high level2.1V
IH
High level input currentVIN = 2.1 V10µA
I
IH
Input hysteresis voltage0.25V
I
= 1mA
Input clamp voltage
ICL
STAT_DIS low level voltage0.9V
SDL
Low level STAT_DIS currentV
STAT_DIS high level voltage2.1V
SDH
High level STAT_DIS currentV
IN
= -1mA
I
IN
= 0.9 V1µA
SD
= 2.1 V10µA
SD
5.5
-0.7
STAT_DIS hysteresis voltage0.25V
STAT_DIS clamp voltage
ISD= 1mA
ISD= -1mA
5.5
-0.7
7V
7V
V
V
11/34
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