Single channel high side driver with analog current sense
Features
Max supply voltageV
Operating voltage rangeV
Max On-State resistance R
Current limitation (typ)I
Off state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off state open load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E050AJ-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-12 package. The VN5E050AJ-E is
designed to drive 12V automotive grounded loads
delivering protection, diagnostics and easy 3V
and 5V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with
auto-restart and over-voltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Ehnanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication, overtemperature indication, short-circuit to Vcc
diagnosis and ON & OFF state open load
detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
Analog current sense pin, delivers a current proportional to the load current.
CS_DISActive high CMOS compatible pin, to disable the current sense pin.
5/37
Block diagram and pin descriptionVN5E050AJ-E
Figure 2.Configuration diagram (top view)
TAB = Vcc
N.C.
GND
INPUT
CURRENT SENSE
CS_DIS
N.C.
Table 2.Suggested connections for unused and not connected pins
Connection /
pin
FloatingNot allowedXXXX
Current senseN.C.OutputInputCS_DIS
1
2
3
4
5
6
12
11
10
9
8
7
N.C.
OUTPUT
OUTPUT
OUTPUT
OUTPUT
N.C.
To ground
Through 1 KΩ
resistor
X
Through 22 KΩ
resistor
Through 10 KΩ
resistor
Through 10 KΩ
resistor
6/37
VN5E050AJ-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
V
CSD
I
CSD
V
CC
GND
OUTPUT
CURRENT
SENSE
I
GND
CS_DIS
I
IN
IN
INPUT
I
SENSE
V
SENSE
VF
I
OUT
V
CC
V
OUT
Note:V
F
= V
- VCC during reverse battery condition.
OUT
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
- I
I
-I
CSENSE
V
CSENSE
E
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
OUT
Reverse DC output current20A
OUT
DC input current-1 to 10mA
I
IN
DC current sense disable input current-1 to 10mA
CSD
DC reverse CS pin current200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L= 3mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
V
- 41 to
CC
+V
CC
104mJ
V
7/37
Electrical specificationsVN5E050AJ-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
T
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (with one channel ON)2.7°C/W
Thermal resistance junction-ambient See Figure 36. °C/W
8/37
VN5E050AJ-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8V <VCC< 28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
I
L(off1)
1. PowerMOS leakage included.
Table 6.Switching (VCC= 13V; Tj= 25°C)
Operating supply
CC
voltage
Undervoltage shutdown3.54.5V
USD
Undervoltage
shutdown hysteresis
I
= 2 A; Tj= 25°C
OUT
On state resistance
ON
Clamp voltageIS= 20 mA414652V
clamp
I
Supply current
S
Off state output current
Output - VCC diode
V
F
voltage
I
= 2 A; Tj= 150°C
OUT
= 2 A; VCC= 5V; Tj= 25°C
I
OUT
Off state; V
VIN=V
On State; V
I
OUT
VIN=V
VIN=V
-I
OUT
CC
OUT=VSENSE=VCSD
CC
=0A
=0V; VCC=13V; Tj=25°C
OUT
=0V; VCC=13V; Tj=125°C
OUT
= 2A; Tj= 150°C0.7V
=13V; Tj=25°C;
=0V
=13V; VIN=5V;
4.51328V
0.5V
mΩ
50
100
mΩ
65
mΩ
(1)
2
1.5
000.013
(1)
5
3µAmA
5
µA
SymbolParameterTest conditionsMin.Typ.Max. Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn- On delay time RL= 6.5Ω (see Figure 6.)20 µs
Turn- Off delay time RL= 6.5Ω (see Figure 6.)40 µs
/dt)onTurn- On voltage slope RL= 6.5Ω
/dt)
Turn- Off voltage slope RL= 6.5Ω
off
Switching energy
losses during t
on
Switching energy
losses during t
off
RL= 6.5Ω (see Figure 6.) 0.20 mJ
RL= 6.5Ω (see Figure 6.)0.3 mJ
See
Figure 26.
See
Figure 28.
9/37
V/ µs
V/ µs
Electrical specificationsVN5E050AJ-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protections and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN=0.9V1µA
I
IL
Input high level voltage2.1V
IH
High level input currentVIN=2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
IN
I
IN
=1mA
=-1mA
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
=0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
=2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
(1)
I
CSD
I
CSD
=1mA
=-1mA
5.5
-0.7
7V
V
7V
V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
DC short circuit current
limH
Short circuit current
I
limL
during thermal cycling
VCC= 13V
5V < V
V
= 13V; TR<Tj<T
CC
CC
< 28V
TSD
192738
38
7A
A
A
T
T
V
DEMAG
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Shutdown temperature150175200°C
TSD
Reset temperatureTRS + 1 TRS + 5°C
T
R
Thermal reset of status135°C
T
RS
Thermal hysteresis
HYST
(T
Turn- Off output voltage
clamp
Output voltage drop
V
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
TSD-TR
)
I
OUT
10/37
7°C
= 2A; VIN=0; L= 6mHVCC-41 VCC-46 VCC-52V
I
=0.1A;
OUT
=-40°C...150°C
T
j
25mV
(see Figure 8.)
VN5E050AJ-EElectrical specifications
Table 9.Current sense (8V<VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
K
K
dK
1/K1
K
dK
2/K2
K
dK
3/K3
I
SENSE0
I
OL
V
SENSE
=0.05A; V
0
1
I
OUT/ISENSE
I
OUT/ISENSE
Current sense
(1)
ratio drift
2
I
OUT/ISENSE
Current sense
(1)
ratio drift
3
I
OUT/ISENSE
Current sense
(1)
ratio drift
Analog sense
OUT
Tj= -40°C...150°C1170 2000 3090
I
= 1A; V
OUT
SENSE
Tj= -40°C...150°C
=25°C...150°C
T
j
= 1A; V
I
OUT
= -40 °C to 150 °C
T
J
I
OUT
= -40°C...150°C
T
j
=25°C...150°C
T
j
I
OUT
=-40 °C to 150 °C
T
J
I
OUT
= -40°C...150°C
T
j
= 25°C...150°C
T
j
I
OUT
= -40 °C to 150 °C
T
J
I
OUT
V
CSD
V
CSD
SENSE
= 2A; V
SENSE
= 2A; V
SENSE
= 4A; V
SENSE
= 4A; V
SENSE
=0A; V
SENSE
=5V; VIN=0V; Tj=-40°C to 150°C
=0V; VIN=5V; Tj=-40°C to 150°C
leakage current
I
=2A; V
OUT
V
CSD
SENSE
=5V; VIN=5V; Tj=-40°C to 150°C
Open load ON
= 5V, 8V<VCC<18V
state current
detection
threshold
Max analog sense
output voltage
V
IN
I
SENSE
I
OUT
= 5 µA
=4A; V
CSD
SENSE
=4 V; V
= 4 V; V
= 4V; V
=4V; V
= 4 V; V
=0.5V;V
= 4V; V
CSD
CSD
CSD
CSD
CSD
CSD
CSD
=0V
=0V;
=0V;
=0V;
=0V;
=0V;
=0V;
1575
2000
2750
1575
2000
2465
-1010%
1765
2000
2315
1765
2000
2155
-77%
1840
2000
2135
1840
2000
2080
-44%
=0V;
0
0
1
2
=0V;
0
1
420mA
=0V 5V
µA
µA
µA
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
Analog sense
output voltage in
fault condition
Analog sense
output current in
fault condition
Delay response
time from falling
edge of CS_DIS
pin
Delay response
time from rising
edge of CS_DIS
pin
(2)
(2)
VCC= 13V; R
VCC= 13V; V
V
I
<4V, 0.5A<Iout<4A
SENSE
= 90% of I
SENSE
= 3.9 KΩ8V
SENSE
= 5V9mA
SENSE
SENSE max
50100µs
(see Figure 4.)
V
I
< 4V, 0.5A<Iout<4A
SENSE
= 10% of I
SENSE
SENSE max
520µs
(see Figure 4.)
11/37
Electrical specificationsVN5E050AJ-E
Table 9.Current sense (8V<VCC<18V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
I
(see Figure 4.)
V
I
I
I
t
DSENSE2H
∆t
DSENSE2H
Delay response
time from rising
edge of INPUT pin
Delay response
time between
rising edge of
output current and
rising edge of
current sense
Delay response
t
DSENSE2L
time from falling
edge of INPUT pin
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open load OFF state detection.
Table 10.Open load detection (8V<VCC<18V)
V
I
(see Figure 4.)
< 4V, 0.5A<Iout<4A
SENSE
= 90% of I
SENSE
<4V,
SENSE
=90% of I
SENSE
= 90% of I
OUT
OUTMAX
=2A (see Figure 7)
< 4V, 0.5A<Iout<4A
SENSE
= 10% of I
SENSE
SENSE max
SENSEMAX,
OUTMAX
SENSE max
80250µs
40µs
100250µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
Open load OFF state
V
voltage detection
OL
VIN = 0V2
threshold
See
Figure 5.
4V
Output short circuit to
t
DSTKON
VCC detection delay at
See Figure 5.1801200µs
turn Off
I
L(off2)r
I
L(off2)f
Off state output current
at V
OUT
= 4V
Off state output current
at V
OUT
= 2V
=0V; V
V
IN
rising from 0V to 4V
V
OUT
=0V; V
V
IN
falling from VCC to 2V
V
OUT
=0V
SENSE
SENSE=VSENSEH
-1200µA
;
-5090µA
Delay response from
= 4 V; VIN= 0V
V
OUT
V
SENSE
= 90% of V
SENSEH
20µs
td_vol
output rising edge to
SENSE
rising edge in
V
open load
12/37
Loading...
+ 25 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.