power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E016AH-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny HPak package. The VN5E016AH-E is
designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel to provide
enhanced diagnostic functions. These functions
include fast detection of overload and short-circuit
to ground through power limitation indication,
overtemperature indication, short-circuit to V
diagnosis and ON-state and OFF-state open-load
detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
Analog current sense pin, delivers a current proportional to the load current
CS_DISActive high CMOS compatible pin, to disable the current sense pin
1. Pins 1 and 7 must be externally tied together.
Doc ID 15994 Rev 45/37
Block diagram and pin descriptionVN5E016AH-E
Figure 2.Configuration diagram (top view) not in scale
1234 567
IN
GND
OUT
Table 2.Suggested connections for unused and not connected pins
Vcc
CS CS_DIS
OUT
Connection / pinCurrent senseOutputInputCS_DIS
FloatingNot allowedXXX
To ground
Through 1 kΩ
resistor
Through 22 kΩ
resistor
Through 10 kΩ
resistor
Through 10 kΩ
resistor
6/37Doc ID 15994 Rev 4
VN5E016AH-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
OUT
V
CSD
I
CSD
CS_DIS
OUTPUT
I
IN
V
IN
INPUT
GND
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
I
GND
I
OUT
-I
I
CSD
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output current
Reverse DC output current 20A
OUT
DC input current -1 to 10mA
I
IN
DC current sense disable input current -1 to 10mA
Current sense maximum voltage (VCC>0)
Maximum switching energy (single pulse)
MAX
(L = 1.55 mH; R
= I
limL
(Typ.))
I
OUT
= 0Ω; V
L
= 13.5V; T
bat
CURRENT
S
ENSE
I
GND
= 150ºC;
jstart
I
SENSE
V
SENSE
V
OUT
Internally
limited
V
-41
CC
+V
CC
350mJ
V
CC
A
V
V
Doc ID 15994 Rev 47/37
Electrical specificationsVN5E016AH-E
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (human body model: R = 1.5KΩ;
C = 100pF)
V
V
ESD
ESD
T
T
– Input
– Current sense
–CS_DIS
– Output
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
4000
2000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case 0.63°C/W
Thermal resistance junction-ambient 69.3°C/W
8/37Doc ID 15994 Rev 4
VN5E016AH-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC<28V, -40°C< Tj < 150 °C, unless
otherwise specified.
Table 5.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
I
L(off1)
Table 6.Switching (VCC=13V, Tj = 25 °C)
Operating supply voltage4.51328V
CC
Undervoltage shutdown-3.54.5V
USD
Undervoltage shutdown
hysteresis
I
= 5 A; Tj= 25 °C--16
OUT
On-state resistance
ON
Output - VCC diode
V
F
voltage
= 5 A; Tj= 150 °C--32
OUT
I
= 5 A; VCC= 5 V; Tj= 25 °C--20
OUT
= 5A; Tj = 150°C--0.7V
-I
OUT
Clamp VoltageIcc = 20 mA; I
I
Supply current
S
Off-state output current
Off-state; V
V
On-state; V
I
VIN = V
T
V
T
= V
IN
OUT
= 25°C
j
= V
IN
= 125°C
j
CC
= V
OUT
CC
= 0A
= 0V; VCC = 13V;
OUT
= 0V; VCC = 13V;
OUT
-0.5 - V
= 0A414652V
OUT
= 13V; Tj = 25°C;
= 0V
SENSE
= 13V; VIN = 5V;
-2 5
-1.53mA
00.01 3
0- 5
mΩI
µA
µA
SymbolParameter Test conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time RL = 2.6 Ω (see Figure 6)-15- µs
Turn-off delay time RL = 2.6 Ω (see Figure 6)-45- µs
/dt)onTurn-on voltage slope RL = 2.6 Ω -0.2 -V/µs
/dt)
Turn-off voltage slope RL = 2.6 Ω -0.2 -V/µs
off
Switching energy
W
ON
losses at turn-on
)
(t
won
R
= 2.6 Ω (see Figure 6)-1.4- mJ
L
Switching energy
W
OFF
losses at turn-off
)
(t
woff
R
= 2.6 Ω (see Figure 6)-0.8- mJ
L
Doc ID 15994 Rev 49/37
Electrical specificationsVN5E016AH-E
Table 7.Logic Inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
Input low level voltage--0.9V
IL
Low level input currentVIN = 0.9V1--µA
I
IL
V
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Input high level voltage2.1--V
IH
I
High level input currentVIN = 2.1V--10µA
IH
Input hysteresis voltage0.25--V
I
= 1mA5.5-7
Input clamp voltage
ICL
IN
= -1mA--0.7-
I
IN
CS_DIS low level voltage--0.9V
Low level CS_DIS currentV
= 0.9V1--µA
CSD
CS_DIS high level voltage2.1--V
High level CS_DIS currentV
= 2.1V--10µA
CSD
CS_DIS hysteresis voltage0.25--V
I
= 1mA5.5-7
CS_DIS clamp voltage
CSD
= -1mA--0.7-
I
CSD
V
V
Table 8.Protection and diagnostics
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
T
TSD
T
R
T
RS
T
HYST
V
DEMAG
V
ON
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
Short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
Reset temperature
Thermal reset of status135--°C
Thermal hysteresis
(T
TSD-TR
)
Turn-off output voltage
clamp
Output voltage drop
limitation
VCC = 13V
5V<V
V
I
OUT
<28V
CC
= 13V; TR<Tj<T
CC
= 2A; VIN = 0; L =
6mH
I
= 0.5A;
OUT
= -40°C...150°C
T
j
TSD
5473108
108
-18 - A
TRS + 1
TRS + 5
-°C
-7 -°C
V
-41
V
-46
V
CC
CC
CC
-52
-25 -mV
A
A
V
10/37Doc ID 15994 Rev 4
VN5E016AH-EElectrical specifications
Table 9.Current sense (8 V < VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
K
K
dK1/K
K
dK2/K
K
dK3/K
I
0
1
2
3
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
1
I
OUT/ISENSE
(1)
Current sense ratio drift
2
I
OUT/ISENSE
(1)
Current sense ratio drift
3
= 0.25A; V
OUT
Tj = -40°C...150°C
I
= 5A; V
OUT
SENSE
Tj = -40°C...150°C
= 25°C...150°C
T
j
I
= 5A; V
OUT
V
CSD
= -40 °C to 150 °C
T
J
I
= 10A; V
OUT
= -40°C...150°C
T
j
SENSE
= 0V;
SENSE
Tj = 25°C...150°C
I
= 10 A; V
OUT
= 0V;
V
CSD
TJ = -40 °C to 150 °C
I
= 25A; V
OUT
SENSE
Tj = -40°C...150°C
= 25°C...150°C
T
j
I
= 25 A; V
OUT
= 0V;
V
CSD
= -40 °C to 150 °C
T
J
= 0A; V
I
OUT
V
CSD
SENSE
= 5V; VIN = 0V;
Tj = -40°C...150°C
SENSE
SENSE
SENSE
= 0.5V
= 0.5V
= 0.5V;
= 4V
= 4 V;
= 4V
= 4 V;
= 0V;
2950 6490 9400-
4540
5130
6230
4540
5130
5720
- 11-+ 11%
4640
4980
5570
4640
4980
5300
- 8-+ 8%
4650
4860
5150
4600
4860
5090
- 4-+ 4%
0-1
-
-
-
I
SENSE0
I
OL
V
SENSE
V
SENSEH
I
SENSEH
t
DSENSE1H
Analog sense leakage
current
Openload ON-state
current detection
threshold
Max analog sense
output voltage
Analog sense output
(2)
voltage in fault condition
Analog sense output
(2)
current in fault condition
Delay response time
from falling edge of
CS_DIS pin
I
= 0A; V
OUT
V
= 0V; VIN = 5V;
CSD
= -40°C...150°C
T
j
I
= 2A; V
OUT
= 5V; VIN = 5V;
V
CSD
= -40°C...150°C
T
j
VIN = 5V;
= 5 µA
I
SENSE
I
= 18A; R
OUT
V
= 13V; R
CC
= 13V; V
V
CC
<4V, 1.5A<Iout<25A
V
SENSE
= 90% of I
I
SENSE
= 0V;
SENSE
0-2
= 0V;
SENSE
--1
5-70mA
= 3.9KΩ 5--V
SENSE
= 3.9KΩ-8-V
SENSE
= 5V-9-mA
SENSE
SENSE max
-50100µs
µA
(see Figure 4.)
Doc ID 15994 Rev 411/37
Electrical specificationsVN5E016AH-E
Table 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
<4V, 1.5A<Iout<25A
Delay response time
t
DSENSE1L
from rising edge of
CS_DIS pin
Delay response time
t
DSENSE2H
from rising edge of
INPUT pin
Delay response time
Δ
t
DSENSE2H
between rising edge of
output current and rising
edge of current sense
Delay response time
t
DSENSE2L
from falling edge of
INPUT pin
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load OFF-state detection.
Table 10.Open-load detection (8 V < VCC<18V)
V
SENSE
= 10% of I
I
SENSE
(see Figure 4)
<4V, 1.5A<Iout<25A
V
SENSE
I
= 90% of I
SENSE
(see Figure 4)
V
I
SENSE
I
OUT
I
OUTMAX
V
I
<4V,
SENSE
= 90% of I
= 90% of I
= 3A (see Figure 7)
<4V, 1.5A<Iout<25A
SENSE
= 10% of I
SENSE
(see Figure 4)
SENSE max
SENSE max
SENSEMAX,
OUTMAX
SENSE max
-520µs
-270600µs
--280µs
-100250µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
Open-load OFF-state
V
voltage detection
OL
= 0V2
V
IN
threshold
See
Figure 5
4V
Output short circuit to
t
DSTKON
detection delay at
V
CC
See Figure 5180-1200µs
turn Off
I
L(off2)r
I
L(off2)f
Off-state output current
at V
OUT
= 4V
Off-state output current
at V
OUT
= 2V
= 0V; V
V
IN
rising from 0V to 4V
V
OUT
= 0V; V
V
IN
falling from VCC to 2V
V
OUT
SENSE
SENSE
= 0V
= V
SENSEH
-120-0µA
;
-50-90µA
Delay response from
= 4 V; VIN = 0V
td_vol
output rising edge to
SENSE
rising edge in
V
open-load
V
OUT
V
SENSE
= 90% of V
SENSEH
--20µs
12/37Doc ID 15994 Rev 4
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