power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Thermal shut down
Table 1.Device summary
Package
PowerSSO-12VN5050AJ-EVN5050AJTR-E
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5050AJ-E is a monolithic device made
using STMicroelectronics VIPower technology. It
is intended for driving resistive or inductive loads
with one side connected to ground. Active V
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table).
This device integrates an analog current sense
which delivers a current proportional to the load
current (according to a known ratio) when
CS_DIS is driven low or left open.
When CS_DIS is driven high, the CURRENT
SENSE pin is in a high impedance condition.
Output current limitation protects the device in
overload condition. In case of long overload
duration, the device limits the dissipated power to
safe level up to thermal shut-down intervention.
Thermal shut-down with automatic restart allows
the device to recover normal operation as soon as
fault condition disappears.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
Pwr
LIM
OVERTEMP.
I
OUT
PwCLAMP
I
LIM
V
DSLIM
K
OUTPUT
CURRENT
SENSE
CURRENT SENSE Analog current sense pin, delivers a current proportional to the load current.
CS_DISActive high CMOS compatible pin, to disable the current sense pin.
5/31
Block diagram and pin descriptionVN5050AJ-E
Figure 2.Configuration diagram (top view)
TA B = V
N.C.
GND
INPUT
CURRENT SENSE
CS_DIS
N.C.
Note:The above pin configuration reflects the changes notified with PCN-APG-BOD/07/2886. The
new pinout is backaward compatible with existing PCB layouts where pins #1 and #6 are
connected to Vcc and/or pins #7 and 12 are connected to OUTPUT. For new PCB designs,
these pins should be left unconnected.
Table 3.Suggested connections for unused and N.C. pins
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
OUT
- I
I
CSD
-I
CSENSE
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output current
Reverse DC output current 30A
OUT
DC input current -1 to 10mA
I
IN
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
Current sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L= 3mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
Internally
limited
V
-41
CC
+V
CC
104mJ
A
V
V
7/31
Electrical specificationsVN5050AJ-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge (Human Body Model: R=1.5kΩ; C=100pF)
- INPUT
V
- CURRENT SENSE
ESD
- CS_DIS
- OUTPUT
- V
CC
V
T
Charge device model (CDM-AEC-Q100-011)750V
ESD
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150 °C
stg
4000
2000
4000
5000
5000
V
V
V
V
V
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax valueUnit
R
R
thj-case
thj-amb
Thermal resistance junction-case (MAX) 2.7°C/W
Thermal resistance junction-ambient (MAX) See Figure 29. °C/W
8/31
VN5050AJ-EElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8V < VCC < 36V; -40°C < Tj < 150°C, unless
otherwise specified.
Table 6.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
clamp
Operating supply
CC
voltage
Undervoltage
USD
shutdown
Undervoltage
shutdown hysteresis
I
= 2A; Tj=25°C
OUT
On state resistance
ON
I
= 2A; Tj=150°C
OUT
= 2A; VCC=5V; Tj=25°C
I
OUT
Clamp voltageIS= 20mA414652V
Off State; V
I
S
Supply current
VIN=V
OUT=VSENSE=VCSD
On State; V
I
L(off)
1. PowerMOS leakage included.
Table 7.Switching (VCC=13V, Tj=25°C)
Off state output current
Output - VCC diode
V
F
voltage
VIN=V
VIN=V
-I
OUT
=0V; VCC=13V; Tj=25°C
OUT
=0V; VCC=13V; Tj=125°C
OUT
= 2A; Tj= 150°C0.7V
=13V; Tj=25°C;
CC
=13V; VIN=5V; I
CC
=0V
OUT
4.51336V
3.54.5V
0.5V
(1)
2
=0A
1.5
000.013
50
100
65
(1)
5
3µAmA
5
mΩ
mΩ
mΩ
µA
SymbolParameterTest conditionsMin.Typ.Max. Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn-on delay time RL= 6.5Ω (see Figure 7.)20µs
Turn-off delay time RL= 6.5Ω (see Figure 7.)40µs
/dt)onTurn-on voltage slopeRL= 6.5Ω
/dt)
Turn-off voltage slopeRL= 6.5Ω
off
Switching energy losses
during
tw
on
Switching energy losses
during tw
off
RL= 6.5Ω (see Figure 7.)0.20mJ
RL= 6.5Ω (see Figure 7.)0.3mJ
See
Figure 20
See
Figure 22
9/31
V/ µs
V/ µs
Electrical specificationsVN5050AJ-E
Table 8.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 9.Protection and diagnostics
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
I
= 1mA
IN
= -1mA
I
IN
5.5
-0.7
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
= 0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS current V
= 2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
I
CSD
I
CSD
= 1mA
= -1mA
(1)
5.5
-0.7
7V
7V
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
limH
I
limL
DC Short circuit
current
Short circuit current
during thermal cycling
= 13V
V
CC
5V<V
CC
V
=13V TR<Tj<T
CC
<36V
TSD
1216.523
23
7A
V
V
A
A
T
T
T
HYST
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Shutdown
TSD
temperature
Reset temperatureTRS + 1 TRS + 5°C
T
R
Thermal reset of
RS
STATUS
Thermal hysteresis
TSD-TR
)
I
= 2A; VIN= 0; L= 6mHVCC-41 VCC-46 VCC-52V
OUT
I
= 0.1A;
OUT
Tj= -40°C...+150°C
(see Figure 5.)
(T
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
10/31
150175200°C
135°C
7°C
25mV
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