power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
■ Diagnostic functions
– proportional load current sense
– high current sense precision for wide range
currents
– current sense disable
– thermal shutdown indication
– very low current sense leakage
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– package
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
cc
– Thermal shut down
Table 1.Device summary
Package
41 V
40 A
2 µA
PowerSSO-12
– Reverse battery protection (see Application
schematic )
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5025AJ-E is a monolithic device made
using STMicroelectronics VIPower technology. It
is intended for driving resistive or inductive loads
with one side connected to ground. Active V
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio) when CS_DIS is driven low or left
open. When CS_DIS is driven high, the
CURRENT SENSE pin is in a high impedance
condition. Output current limitation protects the
device in overload condition. In case of long
overload duration, the device limits the dissipated
power to safe level up to thermal shut-down
intervention. Thermal shut-down with automatic
restart allows the device to recover normal
operation as soon as fault condition disappears.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
- I
I
OUT
- I
I
CSD
-I
CSENSE
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output currentInternally limitedA
Reverse DC output current 24A
OUT
I
DC input current -1 to 10 mA
IN
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
Current Sense maximum voltage
Maximum switching energy (single pulse)
MAX
(L=0.8mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(Typ.) )
VCC-41
+V
CC
140mJ
V
V
7/31
Electrical specificationsVN5025AJ-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
V
V
ESD
ESD
T
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
4000
2000
4000
5000
5000
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150 °C
stg
V
V
V
V
V
2.2 Thermal data
Table 5.Thermal data
SymbolParameterMax ValueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (MAX) 1.4°C/W
Thermal resistance junction-ambient (MAX) See Figure 29°C/W
8/31
VN5025AJ-EElectrical specifications
2.3 Electrical characteristics
The values specified in this section are for 8V<VCC<36V; -40°C<Tj<150°C, unless otherwise
stated.
Table 6.Power section
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
V
V
USDhyst
R
V
I
L(off)
1. PowerMOS leakage included.
Operating supply
CC
voltage
Undervoltage
USD
shutdown
Undervoltage
shutdown hysteresis
On State resistance
ON
Clamp voltageIS= 20 mA414652V
clamp
I
Supply current
S
Off State output
current
Output - VCC diode
V
F
voltage
4.51336V
3.54.5V
0.5V
I
= 3A; Tj= 25°C
OUT
I
= 3A; Tj= 150°C
OUT
= 3A; VCC= 5V; Tj=25°C
I
OUT
Off State; V
VIN=V
OUT=VSENSE=VCSD
On State; V
I
=0A
OUT
V
IN=VOUT
VIN=V
OUT
=4A; Tj=150°C0.7V
-I
OUT
=13V; Tj=25°C;
CC
=0V
=13V; VIN=5V;
CC
=0V; VCC=13V; Tj=25°C
=0V; VCC=13V; Tj=125°C00
(1)
2
1.5
0.013
5
25
50
35
mΩ
mΩ
mΩ
(1)
µA
3
mA
µA
5
9/31
Electrical specificationsVN5025AJ-E
Table 7.Switching (VCC=13V, Tj=25°C)
SymbolParameterTest conditionsMin.Typ.Max.Unit
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
W
W
ON
OFF
Turn-On delay time RL= 4.3Ω (see Figure 8.)30 µs
Turn-Off delay time RL= 4.3Ω (see Figure 8.)50 µs
/dt)onTurn-On voltage slopeRL= 4.3Ω
/dt)
Turn-Off voltage slopeRL= 4.3Ω
off
Switching energy losses
during twon
Switching energy losses
during t
woff
RL= 4.3Ω (see Figure 8)0.47 mJ
RL= 4.3Ω (see Figure 8)0.45 mJ
See
Figure 20
See
Figure 22
Table 8.Logic input
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I
V
I
I(hyst)
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis
voltage
0.25V
V/ µs
V/ µs
V
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Input clamp voltage
CS_DIS low level
voltage
Low level CS_DIS
current
CS_DIS high level
voltage
High level CS_DIS
current
CS_DIS hysteresis
voltage
CS_DIS clamp voltage
IIN= 1mA
IIN= -1mA
= 0.9V1µA
V
CSD
5.5
-0.7
2.1V
= 2.1V10µA
V
CSD
0.25V
I
I
CSD
CSD
=1mA
= -1mA
5.5
-0.7
7V
V
0.9V
7V
V
10/31
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