power limitation
– Very low standby current
– 3.0v CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Thermal shutdown
Table 1.Device summary
Package
PowerSSO-24
TM
Application
■ All types of resistive, inductive and capacitive
loads
Description
The VN5010AK-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active V
device against low energy spikes (see ISO7637
transient compatibility table). This device
integrates an analog current sense which delivers
a current proportional to the load current
(according to a known ratio) when CS_DIS is
driven low or left open. When CS_DIS is driven
high, the CURRENT SENSE pin is in a high
impedance condition. Output current limitation
protects the device in overload condition. In case
of long overload duration, the device limits the
dissipated power to safe level up to thermal
shutdown intervention. Thermal shutdown with
automatic restart allows the device to recover
normal operation as soon as fault condition
disappears.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
Pwr
LIM
OVERTEMP.
I
OUT
PwCLAMP
I
LIM
V
DSLIM
K
OUTPUT
CURRENT
SENSE
CURRENT
SENSE
Analog current sense pin, delivers a current proportional to the load current.
CS_DISActive high CMOS compatible pin, to disable the current sense pin.
Doc ID 13218 Rev 65/31
Block diagram and pin descriptionVN5010AK-E
Figure 2.Connection diagram (top view)
V
CC
GND
NC
NC
INPUT
NC
CURRENT SENSE
NC
CS_DIS
NC
NC
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
NC
NC
NC
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
NC
NC
NC
TAB = Vc c
Table 3.Suggested connections for unused and not connected pins
Connection/pinCurrent senseN.C.OutputInputCS_DIS
FloatingN.R.
To ground
1. Not recommended.
(1)
Through 1 kΩ
resistor
XXX X
XN.R.
Through 10 kΩ
resistor
Through 10 kΩ
resistor
6/31 Doc ID 13218 Rev 6
VN5010AK-EElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
V
CC
I
V
CSD
CSD
I
IN
CS_DIS
INPUT
CURRENT SENSE
V
IN
Note:V
Fn
= V
- VCC during reverse battery condition.
OUT
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.Absolute maximum ratings
GND
OUTPUT
I
GND
I
OUT
I
SENSE
V
SENSE
V
OUT
SymbolParameterValueUnit
V
-V
- I
I
OUT
- I
I
CSD
-I
CSENSE
DC supply voltage 41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
GND
DC output current
Reverse DC output current 30A
OUT
DC input current -1 to 10mA
I
IN
Internally
limited
DC current sense disable input current -1 to 10mA
DC reverse CS pin current 200mA
A
Doc ID 13218 Rev 67/31
Electrical specificationsVN5010AK-E
Table 4.Absolute maximum ratings (continued)
SymbolParameterValueUnit
V
V
CSENSE
E
MAX
V
ESD
V
ESD
T
Current sense maximum voltage
Maximum switching energy (single pulse)
(L=1.25mH; R
=0Ω; V
L
=13.5V; T
bat
jstart
=150ºC; I
OUT
= I
limL
(typ.))
Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)
– Input
– Current Sense
–CS_DIS
– Output
–V
Values specified in this section are for 8 V< VCC< 36 V; -40 °C< Tj< 150 °C, unless
otherwise stated (for each channel).
Table 6.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
V
USDhyst
R
V
clamp
Operating supply
CC
voltage
Undervoltage
USD
shutdown
Undervoltage
shutdown hysteresis
On-state resistance
ON
Clamp voltageICC= 20 mA414652V
Supply current
I
S
I
= 6A; Tj= 25°C
OUT
= 6A; Tj= 150°C
I
OUT
=6A; VCC=5V;Tj=25°C
I
OUT
Off-state; V
V
IN=VOUT=VSENSE=VCSD
On-state; V
= 13V; Tj= 25°C;
CC
=13V; VIN=5V; I
CC
=0V
OUT
=0A
4.51336V
3.54.5V
0.5V
10
mΩ
20
mΩ
13
mΩ
(1)
(1)
5
3µAmA
2
1.5
8/31 Doc ID 13218 Rev 6
VN5010AK-EElectrical specifications
Table 6.Power section (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
L(off)
V
1. PowerMOS leakage included.
Table 7.Switching (VCC=13V)
Off-state output
current
Output - VCC diode
F
voltage
V
IN=VOUT
V
IN=VOUT
-I
OUT
=0V; VCC= 13V; Tj= 25°C
=0V; VCC= 13V; Tj= 125°C
= 10A; Tj= 150°C0.7V
000.013
5
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
d(on)
t
d(off)
(dV
OUT
(dV
OUT
W
ON
W
OFF
Table 8.Logic input
Turn-on delay time RL= 2.6Ω (see Figure 8)- 35 -µs
Turn-off delay time RL= 2.6Ω (see Figure 8)- 65 -µs
Turn-on voltage
/dt)
on
slope
Turn-off voltage
/dt)
off
slope
Switching energy
losses during t
Switching energy
losses during t
won
woff
= 2.6Ω-
R
L
R
= 2.6Ω-
L
RL= 2.6Ω (see Figure 8)- 1.5 -mJ
RL= 2.6Ω (see Figure 8)- 0.8 -mJ
See
Figure 20
See
Figure 22
-V/µs
-V/µs
µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I
V
I(hyst)
V
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
I
Input low level voltage0.9V
IL
Low level input currentVIN= 0.9V1µA
IL
Input high level voltage2.1V
IH
High level input currentVIN= 2.1V10µA
IH
Input hysteresis voltage0.25V
Input clamp voltage
ICL
= 1mA
IN
IIN= -1mA
5.5
-0.7
I
CS_DIS low level voltage0.9V
Low level CS_DIS currentV
= 0.9V1µA
CSD
CS_DIS high level voltage2.1V
High level CS_DIS currentV
= 2.1V10µA
CSD
CS_DIS hysteresis voltage0.25V
CS_DIS clamp voltage
I
CSD
I
CSD
= 1mA
= -1mA
5.5
-0.7
7V
V
7V
V
Doc ID 13218 Rev 69/31
Electrical specificationsVN5010AK-E
Table 9.Protections and diagnostics
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
I
T
T
T
HYST
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 10.Current sense (8V<VCC<16V)
Short circuit current
limH
Short circuit current during
limL
thermal cycling
Shutdown temperature150175200°C
TSD
Reset temperatureTRS+1 TRS+5°C
T
R
Thermal reset of STATUS135°C
RS
Thermal hysteresis (T
TSD-TR
Turn-off output voltage clamp I
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
VCC= 13V
5V<VCC<36V
= 13V;
V
CC
TR<Tj<T
TSD
)7°C
=2A; VIN=0; L=6mH
OUT
I
=0.5A (see Figure 9);
OUT
Tj= -40°C...+150°C
466591
24A
CC
V
-46
CC
V
-41
25mV
V
-52
91
CC
A
A
V
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
= 0.25A;
OUT
K
I
0
OUT/ISENSE
V
T
I
K
I
1
OUT/ISENSE
T
I
Tj= 25°C...150°C
I
V
T
dK
1/K1
Current sense ratio
(1)
drift
I
K
I
2
OUT/ISENSE
T
I
T
I
V
TJ= -40 °C to 150 °C
dK
2/K2
Current sense ratio
(1)
drift
I
K
I
3
OUT/ISENSE
Tj= -40°C...150°C
I
T
=0.5V;V
SENSE
= -40°C...150°C
j
= 6A; V
OUT
= -40°C...150°C
j
OUT
OUT
CSD
= -40 °C to 150 °C
J
OUT
=-40°C...150°C
j
OUT
=25°C...150°C
j
OUT
CSD
OUT
OUT
= 25°C...150°C
j
= 6A; V
= 6A; V
= 0V;
= 10A; V
= 10A; V
= 10A; V
=0V;
= 25A; V
= 25A; V
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
=0V;
CSD
=0.5V; V
=0.5V; V
= 0.5V;
=4V; V
=4V; V
= 4V;
=4V; V
=4V; V
CSD
CSD
CSD
CSD
CSD
CSD
=0V;
=0V;
=0V;
=0V;
=0V;
=0V;
2770 5490 8220
3610
4580
5630
3930
4580
5230
-8+8%
4000
4570
5220
4180
4570
4960
-5+5%
4480
4660
4980
4500
4660
4820
10/31 Doc ID 13218 Rev 6
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