ST VN16BSP User Manual

VN16BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Table 1. General Features

Typ e

VN16BPS 40 V 0.06 Ω 5.6 A 26 V

■ MAXIMUM CONTINUOUS OUTPUT

V

DSS

CURRENT: 20 A @ T

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST DEMAGNETIZATION

■ VERY LOW STAND-BY POWER

R

DS(on)

= 85°C

c

I

OUT

V

CC

DISSIPATION

DESCRIPTION

The VN16BPS is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperature and short circuit.

The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to

and overtemperature. Fast demagnetization

V

CC

of inductive loads is achieved by negative (-18V)
load voltage at turn-off.

Figure 1. Package

10

1

PowerSO-10

Table 2. Order Codes

Package Tube Tape and Reel

PowerSO-10 VN16BSP VN16BSP13TR

REV. 2

1/11June 2004

VN16BSP

Figure 2. Block Diagram

Table 3. Absolute Maximum Ratings

Symbol Parameter Value Unit

I

OUT

V

Drain-Source Breakdown Voltage 40 V

(BR)DSS

I

OUT

Output Current (cont.) at Tc = 85 °C 20 A

(RMS) RMS Output Current at Tc = 85 °C 20 A

Reverse Output Current at Tc = 85 °C (f > 1Hz) –20 A

Input Current ±10 mA

Reverse Supply Voltage –4 V

Status Current ±10 mA

Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V

Power Dissipation at Tc = 25 °C 82 W

Junction Operating Temperature -40 to 150 °C

Storage Temperature -55 to 150 °C

– V

I

STAT

V

P

T

I

R

I

IN

CC

ESD

tot

T

j

stg

2/11

Figure 3. Connection Diagrams

Figure 4. Current and Voltage Conventions

VN16BSP

Table 4. Thermal Data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Note: 1. When mounted using minimum recommended pad size on FR-4 board.

Thermal Resistance Junction-case Max 1.5 °C/W

Thermal Resistance Junction-ambient

(1)

Max

50 °C/W

3/11

VN16BSP

ELECTRICAL CHARACTERISTICS

(8 < V

Table 5. Power

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

Note: 2. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C

Table 6. Switching

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(di/dt)

(di/dt)

Note: 3. See Switching Time Waveforms.

< 16 V; -40 ≤ Tj ≤ 125 °C unless otherwise specified)

CC

V

I

n

R

I

DS(MAX)

R

Supply Voltage 6 13 26 V

CC

(2)

Nominal Current Tc = 85 °C; V

On State Resistance I

on

Supply Current Off State; V

S

Maximum Voltage Drop I

Output to GND Internal

j

= In; V

OUT

= 20 A; V

OUT

Tj = 25 °C 5 10 20 KΩ

Impedance

for battery voltage of 13V which produces a voltage drop of 0.5 V.

(3)

t

d(on)

t

t

d(off)

t

V

demag

Turn-on Delay Time Of
Output Current

(3)

r

Rise Time Of Output
Current

(3)

Turn-off Delay Time Of
Output Current

(3)

f

Fall Time Of Output
Current

Turn-on Current Slope R

on

Turn-off Current Slope R

off

Inductive Load Clamp

R

= 1.6 Ω 5 50 500 µs

load

R

= 1.6 Ω 40 100 680 µs

load

R

= 1.6 Ω 10 100 500 µs

load

R

= 1.6 Ω 40 100 680 µs

load

= 1.6 Ω; V

load

= 1.6 Ω; V

load

R

= 1.6 Ω; L = 1 mH –24 –18 –14 V

load

Voltage

≤ 0.5; V

DS(on)

= 13 V; Tj = 25 °C 0.038 0.06 Ω

CC

= 13 V; Tj ≥ 25 °C 25 50 µA

CC

= 13 V; Tc = 85 °C 1 1.8 V

CC

= 13 V 0.008 0.1 A/µs

CC

= 13 V 0.008 0.1 A/µs

CC

= 13 V 5.6 8.8 A

CC

Table 7. Logic Input

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

V

I(hyst)

I

IN

V

ICL

Note: 4. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated

4/11

Input Low Level Voltage 1.5 V

IL

Input High Level Voltage 3.5 Note 4 V

IH

Input Hysteresis Voltage 0.2 1 1.5 V

Input Current VIN = 5 V; Tj = 25 °C 100 µA

Input Clamp Voltage IIN = 10 mA

to not exceed 10 mA at the input pin.

= –10 mA

I

IN

56

–0.7

7V

V