STAND-BY CONDI T ION ABLE TO MEET
“BLUE ANGEL” NORM (<1w TOTAL POWER
CONSUMPTION)
■ INTERNALLY TRIMMED ZENER
REFERENCE
■ UNDERVOLTAGE LOCK-OUT WITH
HYSTERESIS
■ INTEGRATED START-UP SUPPLY
■ OVER-TEMPERATURE PROTECTION
■ LOW STAND-BY CURRENT
■ ADJUSTABLE CURRENT LIMITATION
Block Diagr am
PENTAWATT HV
PENTAWATT HV (022Y)
Description
VIPer100-E, made using VIPower M0 Technology ,
combines on the same si licon chip a state-of-theart PWM circuit together with a n optimized, high
voltage, Vertical Power MOSFET (620V/ 3A).
Typical applications cover offline power supplies
with a secondary power capability of 50W in wide
range condition and 100W in single range or with
doubler configuration. It is compatible from both
primary or secondary regulation loop despite
using around 50% less components when
compared with a discrete solution. Burst mode
operation is an additional feature of this device,
offering the ability to operate in stand-by mode
without extra components.
Continuous Drain-Source Voltage (TJ = 25 to 125°C)–0.3 to 620V
Maximum CurrentInternally limitedA
Supply Voltage 0 to 15V
Voltage Range Input0 to V
DD
Voltage Range Input0 to 5V
Maximum Continuous Current±2mA
Electr o sta ti c D is c h ar g e (R = 1. 5 kΩ; C=100pF)4000V
Avalanche Drai n-Source Current, Repetitive or Not Repetitive
2A
(Tc=100°C; Pulse width limited by TJ max; δ < 1%)
Power Dissipation at Tc = 25ºC82W
Junction Operat ing TemperatureInternally limited°C
j
Storage Temperature-65 to 150°C
V
4/29
VIPer100-E1 Electri c al Data
1.2 Electrical Characteristics
TJ = 25°C; VDD = 13V, unless otherwise specified
Table 2.Power Section
SymbolParameterTest ConditionsMinTypMaxUnit
BV
I
DSS
R
DS(on)
t
t
C
oss
(1) On Inductive Load, Clamped.
Drain-Source Voltage ID = 1mA; V
DS
Off-State Drain
Current
St atic Drain-Source
On Resistance
Fall Ti meID = 0.2A; V
f
Rise TimeID = 0.4A; V
r
Output CapacitanceV
= 0V620V
COMP
V
= 0V; Tj = 125°C
COMP
= 620V
V
DS
ID = 2A
= 2A; Tj = 100°C
I
D
DS
2.32.5
=300V (1)Figure 7100ns
IN
= 300V (1)Figure 750ns
IN
= 25V150pF
1mA
4.5
Table 3.Supply Section
SymbolParameterTest ConditionsMinTypMaxUnit
I
DDch
I
DD0
I
DD1
V
DDoff
V
DDon
V
DDhyst
Start-Up Charging CurrentV
Operating Supply CurrentV
Operating Supply CurrentV
Undervoltage Shutdown(see Figure 6)7.589V
Undervoltage Reset(see Figure 6)1112V
Hys teresi s Star t - up(see Figure 6)2.43V
= 5V; VDS = 35V
DD
(see Figure 6)(see Fig ure 11)
= 12V; F
DD
SW
= 0kHz
(see Figure 6)
DD
V
DD
= 12V; F
= 12V; F
= 100kHz15.5mA
sw
= 200kHz19mA
sw
-2mA
1216mA
Ω
Table 4.Oscillator Section
SymbolParameterTest Conditions‘MinTypMaxUnit
F
V
OSCIH
V
OSCIL
SW
Oscillator Frequency Total
Variation
RT=8.2KΩ; CT=2.4nF
V
=9 to 15V;
DD
with R
± 1%; CT± 5%
T
90100110KHz
(see Figure 10)(see Figure 14)
Oscillator Peak Voltage7.1V
Oscillator Valley Voltage3.7V
5/29
1 Electrical DataVIPer100-E
Table 5.Error Amplifier Section
SymbolParameterTest Conditions‘MinTypMaxUnit
V
DDREG
∆V
DDreg
G
BW
VDD Regulation PointI
=0mA (see Figure 5)12.61313.4V
COMP
Total VariationTj=0 to 100°C2%
Unity Gain BandwidthFrom Input =VDD to
Output = V
COMP
150KHz
COMP pin is open
(see Figure 15)
A
VOL
Open Loop Voltage GainCOMP pin is open
4552dB
(see Figure 15)
G
m
V
COMPLO
V
COMPHI
I
COMPLO
I
COMPHI
DC TransconductanceV
Output Low LevelI
Output High LevelI
Output Low Curre nt Capability V
Output High Current
=2.5V(see Figure 5)1.11.51.9mA/V
COMP
=-400µA; VDD=14V0.2V
COMP
=400µA; VDD=12V4.5V
COMP
=2.5V; VDD=14V-600µ A
COMP
V
=2.5V; VDD=12V600µA
COMP
Capability
Table 6.PWM Comparator Section
SymbolParameterTest Conditions‘MinTypMaxUnit
H
V
COMPoffVCOMP
I
Dpeak
t
∆V
ID
COMP
/ ∆I
DPEAK
OffsetI
Peak Current Limitat ionV
Current Sense Delay to Turn-
d
Off
V
= 1 to 3 V0.711.3V/A
COMP
= 10mA0.5V
DPEAK
= 12V; COMP pin open345.3A
DD
ID = 1A250ns
t
t
on(min)
Blanking Ti m e250360ns
b
Minimum On Time3501200ns
Table 7.Shutdown and Overtemperature Section
SymbolParameterTest Conditions‘MinTypMaxUnit
V
COMPth
t
DISsu
T
tsd
T
hyst
6/29
Restart Threshold(see Figure 8)0.5V
Disable Set Up Time(see Figure 8)1.75µs
Thermal Shutdown
(see Figure 8)140170°C
Temperature
Thermal Shutdown Hyst eresis (see Figure 8)40°C
Integrated Power MOSFET drain pin. It provides internal bias current during start-up via an
integrated high voltage current source which is switched off during normal operation. The
device is able to handle an unclamped current during its normal operation, assuring self
protection against voltage surges, PCB stray inductance, and allowing a snubberless operation
for low output power.
3.2 Source Pin:
Power MOSFET source pin. Primary side circuit common ground connection.
3.3 VDD Pin (Powe r Supply):
This pin provides two functions :
●It corresponds to the low voltage supply of the control part of the circuit. I f V
8V, the start-up current source is activated and the output power MOSFET is switched off
until the V
reduced, the V
ground. After that, the current source is shut down, and the device tries to start up by
switching again.
●This pin is also connected to the error amplifier, in order to allow primary as well as
secondary regulation configurations. In case of primary regulation, an internal 13V
trimmed reference voltage is used to maintain V
voltage between 8.5V and 12.5V will be put on V
stuck the output of the transconductance amplifier to the high state. The COMP pin
behaves as a constant current source, and can easily be connected to the output of an
optocoupler. Note that any overvoltage due to regulation loop failure is still detected by the
error amplifier through the V
will be somewhat higher than the nominal one, but still under control.
voltage reaches 11V. During this phase, the internal current consumption is
DD
pin is sourcing a current of about 2mA and the COMP pin is shorted to
DD
at 13V. For secondary regulation, a
DD
pin by transformer design, in order to
DD
voltage, which cannot overpass 13V. The output voltage
DD
goes below
DD
3.4 Compensation Pin
This pin provides two functions :
●It is the output of the error transconductance amplifier, and allows for the connection of a
compensation network to provide the desired transfer function of the regulation loop. Its
bandwidth can be easily adjusted to the needed value with usual components value. As
stated above, secondary regulation configurations are also implemented through the
COMP pin.
●When the COMP voltage is going below 0.5V, the shut-down of the circuit occurs, with a
zero duty cycle for the power MOSFET. This feature can be used to switch off the
converter, and is automatically activated by the regulation loop (no matter what the
configuration is) to provide a burst mode operation in case of negligible output power or
open load condition.
8/29
VIPer100-E3 Pin Description
FC00020
3.5 OSC Pin (Oscillator Frequency):
An Rt-Ct network must be connected on that to define the switching frequency. Note that
despite the connection of R
from 8V to 15V. It provides also a synchronisat ion capa bilit y, when connected to an external
frequency source.
Figure 1.Connection Diagrams (Top View)
to VDD, no significant frequency change occurs for VDD varying
t
PENTAWATT HV
Figure 2.Current and Voltage Convention
IDDID
IOSC
OSC
VDD
VOSC
13V
+
VCOMP
COMP SOURCE
ICOMP
PENTAWATT HV (022Y)
DRAINVDD
VDS
9/29
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