ST USBLC6-4SC6 User Manual
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®
ASD
(Application Specific Devices)
MAIN APPLICATIONS
■ USB2.0 ports up to 480Mb/s (high speed)
■ Backwards compatible with USB1.1 low and
full speed
■ Ethernet port: 10/100Mb/s
■ SIM card protection
■ Video line protection
■ Portable electronics
DESCRIPTION
The USBLC6-4SC6 is a monolithic Application
Specific Discrete dedicated to ESD protection of
high speed interfaces, such as USB2.0, Ethernet
links and Video lines.
Its very low line capacitance secures a high level
of signal integrity without compromising in
protecting sensitive chips against the most
stringent characterized ESD strikes.
USBLC6-4SC6
VERY LOW CAPACITANCE
ESD PROTECTION
SOT23-6L
Figure 1: Functional Diagram
FEATURES
■ 4 data lines protection
■ Protects V
■ Very low capacitance: 3pF typ.
■ SOT23-6L package
■ RoHS compliant
BUS
BENEFITS
■ Very low capacitance between lines to GND for
optimized data integrity and speed
■ Low PCB space consuming, 9mm² maximum
foot print
■ Enhanced ESD protection
■ IEC61000-4-2 level 4 compliance guaranteed
at device level, hence greater immunity at
system level
■ ESD protection of V
. Allows ESD current
BUS
flowing to Ground when ESD event occurs on
data line
■ High reliability offered by monolithic integration
■ Low leakage current for longer operation of
battery powered devices
■ Fast response time
■ Consistent D+ / D- signal balance:
- Best capacitance matching tolerance
I/O to GND = 0.015pF
- Compliant with USB 2.0 requirements < 1pF
1
1
I/O1 I/O4
2
GND V
3
I/O2 I/O3
6
5
BUS
4
Table 1: Order Code
Part Number Marking
USBLC6-4SC6 UL46
COMPLIES WITH THE FOLLOWING STANDARDS:
■ IEC61000-4-2 level4:
15kV (air discharge)
8kV (contact discharge)
February 2005
REV. 2
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USBLC6-4SC6
Table 2: Absolute Ratings
Symbol Parameter Value Unit
At device level:
V
Peak pulse voltage
PP
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
MIL STD883C-Method 3015-6
15
15
25
kV
T
T
T
Table 3: Electrical Characteristics (
Storage temperature range -55 to +150 °C
stg
Maximum junction temperature 125 °C
j
Lead solder temperature (10 seconds duration) 260 °C
L
= 25°C)
Tamb
Symbol Parameter Test Conditions
V
RM
I
RM
V
BR
V
V
CL
Reverse stand-off voltage
Leakage current
Breakdown voltage between V
and GND
Forward voltage
F
Clamping voltage
V
= 5V
RM
BUS
= 1mA
I
R
I
= 10mA
R
= 1A, tp = 8/20µs
I
PP
Any I/O pin to GND
I
= 5A, tp = 8/20µs
PP
Any I/O pin to GND
C
i/o-GND
∆C
C
∆C
i/o-GND
i/o-i/o
i/o-i/o
Capacitance between I/O and GND
Capacitance between I/O
= 1.65V 3 4
V
R
= 1.65V 1.85 2.7
V
R
Value
Unit
Min. Typ. Max.
5V
2µA
6V
0.86 V
12 V
17 V
pF
0.015
pF
0.04
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USBLC6-4SC6
Figure 2: Capacitance versus voltage (typical
values)
C(pF)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
C =I/O-GND
O
C =I/O-I/O
j
Data line voltage (V)
F=1MHz
V =30mV
OSC RMS
T =25°C
j
Figure 4: Relative variation of leakage current
versus junction temperature (typical values)
I[T
] / I [T
100
RM j
RM j
=25°C]
V =5V
BUS
Figure 3: Line capacitance versus frequency
(typical values)
C(pF)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 10 100 1000
V =0V
CC
V =1.65V
CC
F(MHz)
V =30mV
OSC RMS
T =25°C
j
Figure 5: Frequency response
USBLC6-4SC6
0.00
S21(dB)
-5.00
(50 )Ω
10
T (°C)
1
25 50 75 100 125
j
-10.00
-15.00
-20.00
100.0k 1.0M 10.0M 100.0M 1.0G
F(Hz)
3/10
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