
■ Rail-to-rail input and output
■ Low noise: 9nV/√Hz
■ Low distortion
■ High output current: 80mA (able to drive 32Ω
loads)
■ High-speed: 4MHz, 1V/µs
■ Operating from 2.7V to 12V
■ ESD internal protection: 1.5kV
■ Latch-up immunity
■ Macromodel included in this specification
Description
The TS921 is a rail-to-rail single BiCMOS
operational amplifier optimized and fully specified
for 3V and 5V operation.
Its high output current allows low-load
impedances to be driven.
The TS921 exhibits very low noise, low distortion
and low offset. It has a high output current
capability which makes this device an excellent
choice for high quality, low voltage or batteryoperated audio systems.
The device is stable for capacitive loads up to
500pF.
TS921
Rail-to-Rail High Output Current
Single Operational Amplifier
N
DIP8
(Plastic Package)
D
SO-8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
Pin connections (top view)
N.C.
Inverting Input
Non-inverting Input
V
CC
1
2
-
+
3
45
8
7
6
N.C.
V
CC
Output
N.C.
+
Applications
■ Headphone amplifier
■ Piezoelectric speaker driver
■ Sound cards, multimedia systems
■ Line driver, actuator driver
November 2005 1/14
■ Servo amplifier
■ Mobile phone and portable communication
sets
■ Instrumentation with low noise as key factor
Rev 3
www.st.com
14

Order Codes
TS921
Part Number
TS921IN
TS921ID/IDT SO-8 Tube or Tape & Reel
TS921IPT
TS921IYD/IYDT SO-8 (automotive grade level) Tube or Tape & Reel 921IY
Temperature
Range
-40°C, +125°C
Package Packing Marking
DIP8 Tube TS921IN
TSSOP8
(Thin Shrink Outline Package)
Tape & Reel
921I
2/14

TS921 Absolute Maximum Ratings
1 Absolute Maximum Ratings
Table 1. Key parameters and their absolute maximum ratings
Symbol Parameter Condition Value Unit
V
T
R
R
CC
Vid
V
stg
T
thja
thjc
Supply voltage
Differential Input Voltage
Input Voltage
i
Storage Temperature -65 to +150 °C
Maximum Junction Temperature 150 °C
j
Thermal Resistance Junction to
Ambient
Thermal Resistance Junction to
Case
(1)
ESD Electro-Static Discharge
Output Short Circuit Duration
Latch-up Immunity 200 mA
(2)
SO-8
TSSOP8
DIP8
SO-8
TSSOP8
DIP8
HBM
Human Body Model
(3)
MM
Machine Model
(4)
CDM
Charged Device Model
14 V
±1 V
V
-0.3 to VCC+0.3
DD
125
120
85
40
37
41
1.5 kV
100 V
1.5 kV
see note
V
°C/W
°C/W
(5)
10sec,
Standard package
250 °C
Soldering Temperature
10sec,
Pb-free package
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > ±1V,
the maximum input current must not exceed ±1mA. In this case (Vid > ±1V) an input serie resistor must be
added to limit input current.
3. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
5. There is no short-circuit protection inside the device: short-circuits from the output to V
heating. The maximum output current is approximately 80mA, independent of the magnitude of Vcc. Destructive
dissipation can result from simultaneous short-circuits on all amplifiers.
260
can cause excessive
cc
Table 2. Operating conditions
Symbol Parameter Value Unit
V
T
V
oper
Supply Voltage 2.7 to 12 V
CC
V
Common Mode Input Voltage Range
icm
-0.2 to VCC +0.2
DD
Operating Free Air Temperature Range -40 to +125 °C
V
3/14

Electrical Characteristics TS921
2 Electrical Characteristics
Table 3. Electrical characteristics for VCC=3V, VDD=0V, V
to V
CC
/2, T
= 25°C (unless otherwise specified)
amb
icm=VCC
/2, RL connected
Symbol Parameter Conditions Min. Typ. Max. Unit
V
Input Offset Voltage
io
DV
V
Input Offset Voltage Drift 2 µV/°C
io
I
Input Offset Current
io
I
Input Bias Current
ib
High Level Output Voltage RL=600Ω
OH
Low Level Output Voltage RL=600Ω
V
OL
A
Large Signal Voltage Gain V
vd
GBP Gain Bandwidth Product
I
Supply Current
CC
≤ T
at T
V
out
V
out
min.
=1.5V
=1.5V
amb
≤ T
max
2.87
R
=32Ω
L
R
=32Ω 180
L
= 2V
out
pk-pk
RL=600Ω
R
=32Ω
L
R
= 600Ω
L
no load, V
= VCC/2
out
130 nA
15 100 nA
2.63
35
16
4MHz
11.5 mA
3
5
100
mV
mV
V/mV
CMR Common Mode Rejection Ratio 60 80 dB
SVR Supply Voltage Rejection Ratio
VCC = 2.7 to 3.3V
60 80 dB
V
I
Output Short-Circuit Current 50 80 mA
o
SR Slew Rate 0.7 1.3 V/µs
Pm Phase Margin at Unit Gain
GM Gain Margin
e
Equivalent Input Noise Voltage f = 1kHz 9
n
R
R
THD Total Harmonic Distortion V
f=1kHz, A
R
4/14
= 600Ω, CL =100pF
L
= 600Ω, CL =100pF
L
=2V
out
=600Ω
L
pk-pk
v
,
=1,
68 Degrees
12 dB
nV
------------
0.005 %
Hz

TS921 Electrical Characteristics
Table 4. Electrical characteristics for VCC = 5V, VDD = 0V, V
to V
CC
/2, T
= 25°C (unless otherwise specified)
amb
= VCC/2, RL connected
icm
Symbol Parameter Conditions Min. Typ. Max. Unit
V
Input Offset Voltage
io
DV
V
Input Offset Voltage Drift
io
I
Input Offset Current V
io
I
Input Bias Current V
ib
High Level Output Voltage
OH
V
Low Level Output Voltage RL = 600Ω
OL
A
Large Signal Voltage Gain V
vd
GBP Gain Bandwidth Product
I
Supply Current
CC
≤ T
at T
min.
= 1.5V
out
= 1.5V
out
R
= 600Ω
L
R
= 32Ω
L
R
= 32Ω 300
L
= 2V
out
amb
pk-pk
≤ T
max
4.85
RL = 600Ω
R
= 32Ω
L
R
= 600Ω
L
no load, V
= VCC/2
out
2 µV/°C
130 nA
15 100 nA
4.4
35
16
4MHz
11.5 mA
3
5
120
mV
mV
V/mV
CMR Common Mode Rejection Ratio 60 80 dB
V
V
SVR Supply Voltage Rejection Ratio
I
Output Short-Circuit Current 50 80 mA
o
= 4.5to 5.5V
CC
60 80 dB
SR Slew Rate 0.7 1.3 V/µs
R
Pm Phase Margin at Unit Gain
GM Gain Margin
e
Equivalent Input Noise Voltage f = 1kHz 9
n
THD Total Harmonic Distortion
= 600Ω, CL =100pF
L
R
= 600Ω, CL =100pF
L
= 2V
V
out
A
=1, RL= 600Ω
v
pk-pk
, f = 1kHz,
68 Degrees
12 dB
nV
------------
0.005 %
Hz
5/14