Rail-to-rail CMOS dual operational amplifier
Features
■ Rail-to-rail input and output voltage ranges
■ Single (or dual) supply operation from 2.7 to
16 V
■ Extremely low input bias current: 1 pA typ.
■ Low input offset voltage: 2 mV max.
■ Specified for 600 Ω and 100 Ω loads
■ Low supply current: 200 μA/amplifier
(V
= 3 V)
CC
■ Latch-up immunity
■ ESD tolerance: 3 kV
■ Spice macromodel included in this specification
TS912, TS912A, TS912B
N
DIP-8
(Plastic package)
D
SO-8
(Plastic micropackage)
Description
The TS912 is a rail-to-rail CMOS dual operational
amplifier designed to operate with a single or dual
supply voltage.
The input voltage range V
supply rails V
The output reaches V
with R
= 10 kΩ and V
L
400 mV, with R
+
and V
CC
= 600 Ω.
L
CC
This product offers a broad supply voltage
operating range from 2.7 to 16 V and a supply
current of only 200 μA/amp (V
Source and sink output current capability is
typically 40 mA (at V
CC
limitation circuit.
includes the two
icm
-
.
CC
-
+30 mV, V
-
+300 mV, V
CC
CC
CC
CC
= 3 V).
+
-40 mV,
+
-
= 3 V), fixed by an internal
Output 1
Inverting Input 1
Non-inverting Input 1
Pin connections (top view)
+
1
2
-
+
3
V
45
CC
V
8
7
-
6
+
CC
Output 2
Inverting Input 2
Non-inverting Input 2
February 2010 Doc ID 2325 Rev 6 1/20
www.st.com
20
Absolute maximum ratings and operating conditions TS912, TS912A, TS912B
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
(3)
(1)
(6)
(2)
(5)
(7)
(4)
(4)
CC
+
+0.3 V.
18 V
±18 V
-0.3 to 18 V
85
°C/W
125
41
°C/W
40
3kV
200 V
1500 V
V
CC
V
id
V
i
I
in
I
o
T
stg
T
j
Supply voltage
Differential input voltage
Input voltage
Current on inputs ±50 mA
Current on outputs ±130 mA
Storage temperature -65 to +150 °C
Maximum junction temperature 150 °C
Thermal resistance junction to ambient
R
thja
DIP8
SO-8
Thermal resistance junction to case
R
thjc
DIP8
SO-8
HBM: human body model
ESD
MM: machine model
CDM: charged device model
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed V
4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous short-circuits on all
amplifiers. These values are typical.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations
while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly
to the ground through only one pin. This is done for all pins.
Table 2. Operating conditions
Symbol Parameter Value Unit
V
V
T
CC
icm
oper
Supply voltage 2.7 to 16 V
Common mode input voltage range V
-0.2 to V
CC-
+0.2 V
CC+
Operating free air temperature range -40 to + 125 °C
2/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Schematic diagram
2 Schematic diagram
Figure 1. Schematic diagram (1/2 TS912)
V
CC
Internal
Non-inverting
Input
Inverting
Input
Vref
Output
V
CC
Doc ID 2325 Rev 6 3/20
Electrical characteristics TS912, TS912A, TS912B
3 Electrical characteristics
Table 3. V
CC+
= 3 V, V
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified)
Symbol Parameter Min. Typ. Max. Unit
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
V
io
TS912B
T
min
≤ T
amb
≤ T
max
TS912
TS912A
TS912B
ΔV
I
CMR
Input offset voltage drift 5 μV/°C
io
Input offset current
I
io
T
≤ T
≤ T
≤ T
amb
amb
amb
≤ T
≤ T
≤ T
min
Input bias current
I
ib
T
min
Supply current (per amplifier, A
CC
T
min
(1)
max
(1)
max
max
Common mode rejection ratio
V
= 0 to 3 V, Vo = 1.5 V
ic
SVR Supply voltage rejection ratio (V
A
Large signal voltage gain (RL = 10 kΩ, Vo = 1.2 V to 1.8 V)
vd
T
≤ T
amb
≤ T
max
min
High level output voltage (Vid = 1 V)
= 100 kΩ
R
L
RL = 10 kΩ
= 600 Ω
R
T
min
L
R
= 100 Ω
L
≤ T
amb
≤ T
max
V
OH
RL = 10 kΩ
= 600 Ω
R
L
Low level output voltage (Vid = -1 V)
= 100 kΩ
R
L
RL = 10 kΩ
V
OL
RL = 600 Ω
= 100 Ω
R
L
T
≤ T
min
amb
≤ T
max
RL = 10 kΩ
RL = 600 Ω
1100
1150
= 1, no load)
VCL
200 300
70 dB
+
= 2.7 to 3.3 V, Vo = VCC/2) 50 80 dB
CC
3
10
2
2.95
2.9
2.3
2.96
2.6
2
2.8
2.1
30
300
900
10
5
2
12
7
3
200
300
400
V/mV
50
70
400
100
600
mV
pA
pA
μA
V
mV
Output short-circuit current (Vid = ±1 V)
I
o
GBP
Source (Vo = V
Sink (V
= V
o
CC+
CC-
)
)
Gain bandwidth product
= 100, RL = 10 kΩ, CL = 100 pF, f = 100 kHz)
(A
VCL
4/20 Doc ID 2325 Rev 6
20
20
40
mA
40
0.8 MHz
TS912, TS912A, TS912B Electrical characteristics
Table 3. V
CC+
= 3 V, V
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified) (continued)
Symbol Parameter Min. Typ. Max. Unit
+
SR
SR
φm Phase margin 30 Degrees
1. Maximum values include unavoidable inaccuracies of the industrial tests.
Slew rate (A
-
Slew rate (A
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 1.3 V to 1.7 V) 0.4 V/μs
VCL
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 1.3 V to 1.7 V) 0.3 V/μs
VCL
en Equivalent input noise voltage (R
= 100 Ω, f = 1 kHz) 30 nV/√Hz
s
Doc ID 2325 Rev 6 5/20
Electrical characteristics TS912, TS912A, TS912B
Table 4. V
CC+
= 5 V, V
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified)
Symbol Parameter Min. Typ. Max. Unit
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
V
io
TS912B
T
min
≤ T
amb
≤ T
max
TS912
TS912A
TS912B
ΔV
I
I
I
CC
CMR
Input offset voltage drift 5 μV/°C
io
Input offset current
io
T
min
Input bias current
ib
T
min
≤ T
≤ T
amb
amb
≤ T
≤ T
(1)
max
(1)
max
Supply current (per amplifier, A
≤ T
T
min
amb
≤ T
max
Common mode rejection ratio
= 1.5 to 3.5 V, Vo = 2.5 V
V
ic
SVR Supply voltage rejection ratio (V
A
Large signal voltage gain (RL = 10 kΩ, Vo = 1.5 V to 3.5 V)
vd
T
≤ T
amb
≤ T
max
min
High level output voltage (Vid = 1V)
RL = 100 kΩ
= 10 kΩ
R
L
V
OH
RL = 600 Ω
RL = 100 Ω
≤ T
T
min
amb
≤ T
max
RL = 10 kΩ
R
= 600 Ω
L
Low level output voltage (Vid = -1 V)
= 100 kΩ
R
L
= 10 kΩ
R
L
= 600 Ω
R
V
OL
L
RL = 100 Ω
≤ T
T
min
amb
≤ T
max
RL = 10 kΩ
= 600 Ω
R
L
Output short-circuit current (Vid = ±1 V)
I
o
GBP
SR
SR
Source (V
Sink (Vo = V
Gain bandwidth product
(A
VCL
+
Slew rate (A
-
Slew rate (A
= V
CC+
CC-
)
)
o
= 100, RL = 10 kΩ, CL = 100 pF, f = 100 kHz)
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 1 V to 4 V) 0.8 V/μs
VCL
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 1 V to 4 V) 0.6 V/μs
VCL
1 100
1 150
= 1, no load)
VCL
230 350
60 85 dB
= 3 to 5 V, Vo = VCC/2) 55 80 dB
CC+
10
40
7
4.95
4.9
4.95
4.25
4.55
3.7
4.8
4.1
40
350
1400
45
45
65
65
1MHz
10
5
2
12
7
3
200
300
450
50
100
500
150
750
mV
pA
pA
μA
V/mV
V
mV
mA
6/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Electrical characteristics
Table 4. V
CC+
= 5 V, V
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified) (continued)
Symbol Parameter Min. Typ. Max. Unit
en Equivalent input noise voltage (R
V
O1/VO2
Channel separation (f = 1 kHz) 120 dB
φm Phase margin 30 Degrees
1. Maximum values include unavoidable inaccuracies of the industrial tests.
= 100 Ω, f = 1 kHz) 30 nV/√Hz
s
Doc ID 2325 Rev 6 7/20
Electrical characteristics TS912, TS912A, TS912B
Table 5. V
CC+
= 10 V, V
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified)
Symbol Parameter Min. Typ. Max. Unit
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
V
io
TS912B
T
min
≤ T
amb
≤ T
max
TS912
TS912A
TS912B
ΔV
I
Input offset voltage drift 5 μV/°C
io
Input offset current
I
io
T
≤ T
≤ T
≤ T
amb
amb
amb
≤ T
≤ T
≤ T
min
Input bias current
I
ib
T
min
Supply current (per amplifier, A
CC
T
min
(1)
max
(1)
max
max
Common mode rejection ratio
CMR
= 3 to 7 V, Vo = 5 V
V
ic
Vic = 0 to 10 V, Vo = 5 V
SVR Supply voltage rejection ratio (V
A
Large signal voltage gain (RL = 10 kΩ, Vo = 2.5 V to 7.5 V)
vd
T
≤ T
amb
≤ T
max
min
High level output voltage (Vid = 1V)
= 100 kΩ
R
L
RL = 10 kΩ
= 600 Ω
R
V
OH
L
RL = 100 Ω
≤ T
T
min
amb
≤ T
max
RL = 10 kΩ
= 600 Ω
R
L
Low level output voltage (Vid = -1 V)
= 100 kΩ
R
L
RL = 10 kΩ
= 600 Ω
R
T
min
L
= 100 Ω
R
L
≤ T
amb
≤ T
max
V
OL
RL = 10 kΩ
RL = 600 Ω
1 100
1 150
= 1, no load)
VCL
60
50
= 5 to 10 V, Vo = VCC/2) 60 90 dB
CC+
15
400 600
90
75
50
10
9.95
9.85
9.95
9
9.35
7.8
9.8
8.8
50
650
2300
10
5
2
12
7
3
200
300
700
V/mV
50
150
800
150
900
mV
pA
pA
μA
dB
V
mV
Output short circuit current (Vid = ±1 V)
I
o
GBP
Source (Vo = V
Sink (V
= V
o
CC+
CC-
)
)
Gain bandwidth product
= 100, RL = 10 kΩ, CL = 100 pF, f = 100 kHz)
(A
VCL
8/20 Doc ID 2325 Rev 6
45
50
65
mA
75
1.4 MHz
TS912, TS912A, TS912B Electrical characteristics
Table 5. V
= 10 V, V
CC+
= 0 V, RL, CL connected to VCC/2, T
CC-
= 25°C (unless otherwise
amb
specified) (continued)
Symbol Parameter Min. Typ. Max. Unit
Slew rate
+
SR
SR
-
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 2.5 V to 7.5 V)
(A
VCL
Slew rate
(A
= 1, RL = 10 kΩ, CL = 100 pF, Vi = 2.5 V to 7.5 V)
VCL
φm Phase margin 40 Degrees
en Equivalent input noise voltage (Rs = 100 Ω, f = 1 kHz) 30 nV/√Hz
Total harmonic distortion
= 1, RL = 10 kΩ, CL = 100 pF, Vo= 4.75 V to 5.25 V,
THD
(A
VCL
f = 1 kHz)
C
1. Maximum values include unavoidable inaccuracies of the industrial tests.
Input capacitance 1.5 pF
in
1.3 V/μs
0.8 V/μs
0.02 %
Doc ID 2325 Rev 6 9/20
Electrical characteristics TS912, TS912A, TS912B
Figure 2. Supply current (each amplifier)
vs. supply voltage
600
A)
m
CC
500
T = 25°C
amb
A = 1
VCL
V = V / 2
O CC
400
300
200
SUPPLY CURRENT, I (
100
0 4 8 12 16
SUPPLY VOLTAGE, V (V)
CC
Figure 4. Low level output voltage vs. low
level output current
5
T = 25 C
amb
4
OL
V = -100mV
°
id
Figure 3. High level output voltage vs. high
level output current
5
T = 25 C
amb
OH
4
V = 100mV
id
°
V = +5V
CC
3
OUTPUT VOLTAGE, V (V)
2
1
V = +3V
CC
0
-70 -56 -42 -28 -14 0
OUTPUT CURRENT, I (mA)
OH
Figure 5. Input bias current vs. temperature
100
V = 10V
CC
V = 5V
ib
i
No load
3
V = +3V
CC
2
V = +5V
CC
1
OUTPUT VOLTAGE, V (V)
0
14 28 42 56 70
OUTPUT CURRENT, I (mA)
OL
Figure 6. High level output voltage vs. high
level output current
20
T = 25 C
amb
V = 100mV
16
OH
°
id
12
8
4
OUTPUT VOLTAGE, V (V)
0
-70 -56 -42 -28 -14 0
OUTPUT CURRENT, I (mA)
V = +16V
CC
V = +10V
CC
OH
10
INPUT BIAS CURRENT, I (pA)
1
25 50 75 100 125
TEMPERATURE, T ( C)
amb
°
Figure 7. Low level output voltage vs. low
level output current
10
T = 25 C
amb
8
OL
6
4
2
OUTPUT VOLTAGE, V (V)
0
V = -100mV
°
id
V = 16V
CC
V = 10V
CC
14 28 42 56 70
OUTPUT CURRENT, I (mA)
OL
10/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Electrical characteristics
6
6
6
Figure 8. Gain and phase vs. frequency Figure 9. Gain bandwidth product vs. supply
voltage
50
40
30
PHASE
20
T = 25°C
V = 10V
GAIN (dB)
R = 10k
10
C = 100pF
A = 100
0
-10
23
10
amb
CC
L
L
VCL
W
10
10
Gain
Bandwidth
Product
4
FREQUENCY, f (Hz)
GAIN
5
10
10
Phase
Margin
6
10
0
45
90
135
180
7
1800
1400
1000
PHASE (Degrees)
GAIN BANDW. PROD., GBP (kHz)
T = 25°C
amb
R = 10k
L
C = 100pF
L
W
600
200
0 4 8 12 1
SUPPLY VOLTAGE, V (V)
CC
Figure 10. Phase margin vs. supply voltage Figure 11. Gain and phase vs. frequency
60
T = 25°C
amb
R = 10k
50
f
40
L
C = 100pF
L
W
30
20
PHASE MARGIN, m (Degrees)
0 4 8 12 1
SUPPLY VOLTAGE, V (V)
CC
50
40
30
T = 25°C
20
V = 10V
GAIN (dB)
R = 600
10
C = 100pF
A = 100
0
-
10
23
10
PHASE
amb
CC
L
L
VCL
10
GAIN
W
Gain
Bandwidth
Product
10
4
10
5
FREQUENCY, f (Hz)
Phase
Margin
6
10
10
0
45
90
135
180
7
PHASE (Degrees)
Figure 12. Gain bandwidth product vs. supply
voltage
1800
T = 25°C
amb
1400
R = 600
C = 100pF
1000
600
200
GAIN BANDW. PROD., GBP (kHz)
0 4 8 12 16
W
L
L
SUPPLY VOLTAGE, V (V)
CC
Doc ID 2325 Rev 6 11/20
Figure 13. Phase margin vs. supply voltage
60
T = 25°C
amb
R = 600
50
f
40
L
C = 100pF
L
30
20
PHASE MARGIN, m (Degrees)
0 4 8 12 1
W
SUPPLY VOLTAGE, V (V)
CC
Macromodel TS912, TS912A, TS912B
Figure 14. Input voltage noise vs. frequency
150
= 10V
V
CC
T
= 25°C
amb
= 100
100
50
EQUIVALENT INPUT
VOLTAGE NOISE (nV/VHz)
0
10 100
1000
FREQUENCY (Hz)
R
S
W
10000
4 Macromodel
4.1 Important note concerning this macromodel
● All models are a trade-off between accuracy and complexity (i.e. simulation time).
● Macromodels are not a substitute to breadboarding; rather, they confirm the validity of
a design approach and help to select surrounding component values.
● A macromodel emulates the nominal performance of a typical device within specified
operating conditions (temperature, supply voltage, for example). Thus the
macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the
main parameters of the product.
Data derived from macromodels used outside of the specified conditions (V
for example) or even worse, outside of the device operating conditions (V
example), is not reliable in any way.
, temperature,
CC
, V
icm
, for
CC
12/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Macromodel
4.2 Macromodel code
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS912 1 2 3 4 5
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.563355E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.500000E-12
CIN 1 5 1.500000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.655100E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 3.82E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 -0.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 -0.5000000E+00
FCP 4 5 VOFP 7.750000E+00
FCN 5 4 VOFN 7.750000E+00
* AMPLIFYING STAGE
FIP 5 19 VOFP 5.500000E+02
FIN 5 19 VOFN 5.500000E+02
RG1 19 5 5.087344E+05
RG2 19 4 5.087344E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 12.33E+02
HZTN 5 30 VOFN 12.33E+02
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3135
VIPM 28 4 150
HONM 21 27 VOUT 3135
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 65
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.924
Doc ID 2325 Rev 6 13/20
Macromodel TS912, TS912A, TS912B
HSCP 68 25 VSCP1 1E8
DON 69 19 MDTH 400E-12
VON 24 5 2.4419107
HSCN 24 69 VSCN1 1.5E8
VSCTHP 60 61 0.1375
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.75
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
14/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Package information
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Doc ID 2325 Rev 6 15/20
Package information TS912, TS912A, TS912B
5.1 DIP8 package information
Figure 15. DIP8 package mechanical drawing
Table 6. DIP8 package mechanical data
Dimensions
Ref.
Min. Typ. Max. Min. Typ. Max.
A5.330.210
A1 0.38 0.015
A2 2.92 3.30 4.95 0.115 0.130 0.195
b 0.36 0.46 0.56 0.014 0.018 0.022
b2 1.14 1.52 1.78 0.045 0.060 0.070
c 0.20 0.25 0.36 0.008 0.010 0.014
D 9.02 9.27 10.16 0.355 0.365 0.400
E 7.62 7.87 8.26 0.300 0.310 0.325
E1 6.10 6.35 7.11 0.240 0.250 0.280
e 2.54 0.100
eA 7.62 0.300
eB 10.92 0.430
L 2.92 3.30 3.81 0.115 0.130 0.150
Millimeters Inches
16/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Package information
5.2 SO-8 package information
Figure 16. SO-8 package mechanical drawing
Table 7. SO-8 package mechanical data
Dimensions
Ref.
Min. Typ. Max. Min. Typ. Max.
A1.750.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.28 0.48 0.011 0.019
c 0.17 0.23 0.007 0.010
D 4.80 4.90 5.00 0.189 0.193 0.197
E 5.80 6.00 6.20 0.228 0.236 0.244
E1 3.80 3.90 4.00 0.150 0.154 0.157
e 1.27 0.050
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
L1 1.04 0.040
k 0 8° 1° 8°
ccc 0.10 0.004
Millimeters Inches
Doc ID 2325 Rev 6 17/20
Ordering information TS912, TS912A, TS912B
6 Ordering information
Table 8. Order codes
Part number
TS912IN
Temperature
range
Package Packing Marking
TS912IN
DIP8 Tube
TS912AIN TS912AIN
TS912ID
TS912IDT
TS912AID
TS912AIDT
TS912BID
TS912BIDT
TS912IYD
TS912IYDT
TS912AIYD
TS912AIYDT
(1)
(1)
-40°C, +125°C
(Automotive grade level)
SO-8
Tube or
Tape & reel
SO-8
TS912BIYD
TS912BIYDT
1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening
according to AEC Q001 & Q 002 or equivalent.
(1)
912I
912AI
912BI
912IY
912AIY
912BY
18/20 Doc ID 2325 Rev 6
TS912, TS912A, TS912B Revision history
7 Revision history
Table 9. Document revision history
Date Revision Changes
04-Dec-2001 1 First release.
31-Jul-2005 2
03-Oct-2005 3
13-Feb- 2006 4
16-Oct-2007 5
01-Feb-2010 6
PPAP references inserted in the datasheet, see order codes table.
ESD protection inserted in AMR table.
Some errors in the Order Codes table were corrected.
Reorganization of Section 4: Macromodel.
Parameters added in AMR table (Tj, ESD, R
thja
, R
thjc
).
Corrected units and ESD footnotes in Table 1: Absolute maximum
ratings.
Corrected misalignments in electrical characteristics table.
Updated Section 4: Macromodel.
Added missing automotive grade order codes and footnote in
Table 8: Order codes.
Format update.
Added TS912A and TS912B part numbers on cover page.
Doc ID 2325 Rev 6 19/20
TS912, TS912A, TS912B
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20/20 Doc ID 2325 Rev 6
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