2.5V micropower shunt voltage reference
Features
■ 2.50V typical output voltage
■ Ultra low current consumption: 40µA typ.
■ High precision @ 25°C
– ±2% (standard version)
– ±1% (A grade)
■ High stability when used with capacitive loads
■ Industrial temperature range: -40°C to +85°C
■ 100ppm/°C maximum temperature coefficient
Applications
■ Computers
■ Instrumentation
■ Battery chargers
■ Switch mode power supply
■ Battery operated equipment
TS822
L
SOT23-3L
(Plastic micropackage)
Pin connections
(Top view)
Description
The TS822 is a low power shunt v oltage referen ce
providing a stable 2.5V output voltage over the
industrial temperature range (-40°C to +85°C).
Availabe in SOT23-3 surface mount package, it
can be designed in applications where space
saving is critical.
The low operating current is a key adv antage for
power restricted designs. In addition, the TS822 is
very stable and can be used in a broad range of
application conditions.
August 2007 Rev 2 1/9
www.st.com
9
Absolute maximum ratings and operating conditions TS822
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
I
P
T
stg
ESD
T
lead
1. Pd is calculated with T
2. Human body model: 100pF discharged through a 1.5kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
3. Machine model: a 200pF cap is charged to the specified voltage, then discharged directly between two pins
of the device with no external series resistor (internal resistor < 5Ω), done for all couples of pin
combinations with other pins floating.
Table 2. Operating conditions
Reverse bre akdown current 20 mA
k
Forward curren t 10 mA
f
Pow er dissipation
d
(1)
SOT23-3
360 mW
Storage temperature -65 to +150 °C
(3)
(2)
2kV
200 V
Human body model (HBM)
Machine model (MM)
Lead temperature (soldering, 10 seconds) 260 °C
= 25°C and R
amb
= 340°C/W for the SOT23-3L package
thja
Symbol Parameter Value Unit
I
k-min
I
k-max
T
oper
Minimum operating current 50 μA
Maximum operating current 15 mA
Operating free air temperature range -40 to +85 °C
2/9
TS822 Electrical characteristics
2 Electrical characteristics
Table 3. TS822 (2% precision) T
amb
= 25°C
(1)
(unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse breakdown voltage Ik = 100μA 2.45 2.5 2.55 V
V
k
Reverse breakdown voltage tolerance
I
= 100μA
k
-40°C < T
amb
< +85°C
-50
-66
50
66
mV
T = 25°C 40 50
I
k-min
ΔV
ref
ΔV
k
R
K
En Wide band noise I
1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.
Table 4. TS822A (1% precision) T
Minimum operating current
-40°C < T
< +85°C 60
amb
/ΔT Average temperature coefficient Ik = 100μA 30 100 ppm/°C
I
< Ik < 1mA
k-min
Reverse breakdown voltage change
/ΔI
k
with operating current range
-40°C < T
1mA < I
-40°C < T
I
= I
k
k-min
-40°C < T
Reverse static impedance
ka
= 1 to 15mA
I
k
-40°C < T
Long term stability Ik = 100μA, t = 1000hrs 120 ppm
vh
= 100μA, 10Hz < f < 10kHz 35 nV/√Hz
k
amb
= 25°C
(1)
(unless otherwise specified)
< +85°C
amb
< 15mA
k
< +85°C
amb
to 1mA
< +85°C
amb
< +85°C
amb
0.4 1
1.2
mV
2.5 8
10
0.4 1
1.2
0.2 0.6
0.7
Symbol Parameter Test conditions Min. Typ. Max. Unit
μA
Ω
Reverse breakdown voltage Ik = 100μA 2.475 2.5 2.525 V
V
k
Reverse breakdown voltage tolerance
= 100μA
I
k
-40°C < T
amb
< +85°C
-25
-41
25
41
mV
T = 25°C 40 50
I
k-min
ΔV
ref
ΔV
k/ΔIk
R
K
En Wide band noise I
1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.
Minimum operating current
-40°C < T
< +85°C 60
amb
/ΔT Average temperature coefficient Ik = 100μA 30 100 ppm/°C
I
< Ik < 1mA
k-min
Reverse breakdown voltage change
with operating current range
-40°C < T
1mA < I
-40°C < T
I
= I
k
k-min
-40°C < T
Reverse static impedance
ka
= 1mA to 15mA
I
k
-40°C < T
Long term stability Ik = 100μA, t = 1000hrs 120 ppm
vh
= 100μA, 10Hz < f < 10kHz 35 nV/√Hz
k
< +85°C
amb
< 15mA
k
< +85°C
amb
to 1mA
< +85°C
amb
< +85°C
amb
0.4
2.5 8
0.4 1
0.2 0.6
1
1.2
mV
10
1.2
0.7
3/9
μA
Ω