TS512
TS512,A
HIGH SPEED PRECISION
DUAL OPERATIONAL AMPLIFIERS
.
.LOW OFFSET VOLTAGE : 500μV max.
.LOW POWER CONSUMPTION
.SHORT CIRCUIT PROTECTION
.LOW DISTORTION, LOW NOISE
.HIGH GAIN-BANDWIDTH PRODUCT
.HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION
.MACROMODEL INCLUDED IN THIS SPECIFICATION
DESCRIPTION
The TS512 is a high performance dual operational amplifier with frequency and phase compensation built intothe chip. The internal phasecompensation allows stable operation as voltage follower in spite of its high gain-bandwidth products.
The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularlyintended for professional and telecom applications (active filter, etc).
PIN CONNECTIONS (top view)
N |
D |
DIP8 |
SO8 |
(Plastic Package) |
(Plastic Micropackage) |
ORDER CODES
Part Number |
Temperature Range |
Package |
||
N |
D |
|||
|
|
|||
TS512I |
-40, +125oC |
• |
• |
|
TS512AI |
-40, +125oC |
• |
• |
Output 1 |
1 |
|
|
8 |
V |
+ |
|
|
|
C C |
|
||
Inve rting Input 1 |
2 |
- |
|
7 |
Output |
|
Non-inve rting Input 1 |
3 |
+ |
- |
6 |
Inve rting Input 2 |
|
|
||||||
VC C - |
4 |
|
+ |
5 |
Non-inve rting Input 2 |
March 1998
TS512,A
SCHEMATIC DIAGRAM (1/2 TS512)
|
|
|
Inverting |
|
Non-inverting |
|
|
|
|
|
input |
|
input |
|
|
|
|
|
D6 |
|
D7 |
|
|
|
|
|
|
|
|
|
|
|
|
|
R1 |
|
R2 |
R3 |
R4 |
Q1 |
Q2 |
|
|
|
|
Q13 |
|
|
|
|
Q5 |
Q6 |
|||
|
|
|
|
|
Q4 |
||
|
|
|
|
|
|
|
|
|
|
|
Q3 |
|
|
|
|
|
|
|
D1 |
|
|
|
|
R5 |
Q 7 |
|
|
|
|
Q9 |
Q12 |
|
|
|
|
R6 |
|||
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
Q8 |
Q10 |
Q11 |
|
D2 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
R7 |
Q17 |
|
Q 18 |
Q19 |
|
C1 |
|
|
|
|
|
|
Q15 |
|||
|
|
|
|
|
|
|
Q 16 |
D3 |
|
|
|
|
Q23 |
|
|
|
|
|
D5 |
|
|
|
|
|
|
Q 21 |
|
|
|
|
|
|
|
Q22 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C2 |
|
|
Q20 |
|
|
|
|
|
|
|
|
|
D4 |
|
R8 |
|
R9 |
R10 |
|
|
8
Q 14
O utput
4
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
±18 |
V |
Vi |
Input Voltage |
±VCC |
|
Vid |
Differential Input Voltage |
± (VCC - 1) |
|
Toper |
Operating Free Air Temperature Range |
-40 to +125 |
oC |
Ptot |
Power Dissipation at Tamb = 70oC |
500 |
mW |
Tj |
Junction Temperature |
150 |
oC |
Tstg |
Storage Temperature Range |
-65 to +150 |
oC |
2/7
TS512,A
ELECTRICAL CHARACTERISTICS (VCC = ±15V, Tamb = 25oC, unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
ICC |
Supply Current |
|
|
|
0.7 |
1.2 |
mA |
Iib |
Input Bias Current |
|
|
|
50 |
150 |
nA |
|
|
Tmin. < Top < Tmax. |
|
|
|
300 |
nA |
Ri |
Input Resistance |
f = 1kHz |
|
|
1 |
|
MΩ |
Vio |
Input Offset Voltage |
|
TS512 |
|
0.5 |
2.5 |
mV |
|
|
|
TS512A |
|
|
0.5 |
|
|
|
Tmin. < Top < Tmax. |
TS512 |
|
|
3.5 |
mV |
|
|
|
TS512A |
|
|
1.5 |
|
DVio |
Input Offset Voltage Drift |
Tmin. < Top < Tmax. |
|
|
2 |
|
μV/oC |
Iio |
Input Offset Current |
|
|
|
5 |
20 |
nA |
|
|
Tmin. < Top < Tmax. |
|
|
|
40 |
nA |
DIio |
Input Offset Current Drift |
Tmin. < Top < Tmax. |
|
|
0.08 |
|
nA |
|
|
|
|
|
|
|
°C |
Ios |
Output Short Circuit Current |
|
|
|
23 |
|
mA |
Avd |
Large Signal Voltage Gain |
RL = 2kΩ |
VCC = ±15V |
90 |
100 |
|
dB |
|
|
|
VCC = ±4V |
|
95 |
|
|
GBP |
Gain-bandwidth Product |
f = 100kHz |
|
1.8 |
3 |
|
MHz |
en |
Equivalent Input Noise Voltage |
f = 1kHz |
|
|
|
|
nV |
|
|
Rs = 50Ω |
|
|
8 |
15 |
√```Hz |
|
|
Rs = 1kΩ |
|
|
10 |
|
|
|
|
Rs = 10kΩ |
|
|
18 |
|
|
THD |
Total Harmonic Distortion |
AV = 20dB |
RL = 2kΩ |
|
0.03 |
0.1 |
% |
|
|
VO = 2VPP |
f = 1kHz |
|
|
|
|
±Vopp |
Output Voltage Swing |
RL = 2kΩ |
VCC = ±15V |
±13 |
|
|
V |
|
|
|
VCC = ±4V |
|
±3 |
|
|
Vopp |
Large Signal Voltage Swing |
RL = 10kΩ |
f = 10kHz |
|
28 |
|
VPP |
SR |
Slew Rate |
Unity Gain, RL = 2kΩ |
|
0.8 |
1.5 |
|
V/μs |
CMR |
Common Mode Rejection Ratio |
Vic = 10V |
|
90 |
|
|
dB |
SVR |
Supply Voltage Rejection Ratio |
Vic = 1V |
f = 100Hz |
90 |
|
|
dB |
VO1/VO2 |
Channel Separation |
f = 1kHz |
|
100 |
120 |
|
dB |
3/7