TS4990Absolute maximum ratings and operating conditions
1 Absolute maximum ratings and operating conditions
Table 1.Absolute maximum ratings (AMR)
SymbolParameterValueUnit
(2)
(1)
6V
GND to V
CC
V
T
T
CC
V
oper
stg
T
Supply voltage
in
Input voltage
Operating free-air temperature range-40 to + 85°C
Storage temperature-65 to +150°C
j
Maximum junction temperature150°C
Thermal resistance junction to ambient
R
thja
P
diss
ESD
Flip-chip
(3)
MiniSO-8
DFN8
Power dissipationInternally limited
HBM: Human body model
MM: Machine model
(4)
(5)
250
215
120
2
200
°C/W
kV
Latch-up immunity200mA
Lead temperature (soldering, 10sec)
Lead temperature (soldering, 10sec) for lead-free version
1. All voltage values are measured with respect to the ground pin.
2. The magnitude of the input signal must never exceed V
3. The device is protected in case of over temperature by a thermal shutdown active at 150° C.
4. Human body model: A 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
5. Machine model: A 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations
while the other pins are floating.
Table 2.Operating conditions
+ 0.3 V / GND - 0.3 V.
CC
250
260
°C
V
V
SymbolParameterValueUnit
V
CC
V
icm
Supply voltage2.2 to 5.5V
Common mode input voltage range1.2V to V
CC
Standby voltage input:
V
STBY
R
T
SD
Device ON
Device OFF
L
Load resistor≥ 4Ω
1.35 ≤ V
GND ≤ V
Thermal shutdown temperature150°C
STBY
STBY
≤ V
≤ 0.4
CC
Thermal resistance junction to ambient
R
thja
Flip-chip
MiniSO-8
DFN8
1. This thermal resistance is reached with a 100 mm2 copper heatsink surface.
2. When mounted on a 4-layer PCB.
(1)
(2)
100
190
40
Doc ID 9309 Rev 133/33
V
V
°C/W
Typical application schematicsTS4990
2 Typical application schematics
Figure 1.Typical application schematics
Rfeed
CfeedVcc
+
Cs
Audio In
Table 3.Component descriptions
Cin
Standby
Control
Rin
Cb
Vin-
-
Vin+
+
Bypass
Standby
+
Bias
VCC
-
AV = -1
+
GND
ComponentFunctional description
R
in
Inverting input resistor that sets the closed loop gain in conjunction with R
resistor also forms a high pass filter with Cin (Fc = 1 / (2 x Pi x Rin x Cin)).
Vout 1
Vout 2
TS4990
Speaker
8Ohms
feed
. This
C
in
R
feed
C
s
C
b
C
feed
A
V
Exposed pad
Input coupling capacitor that blocks the DC voltage at the amplifier input terminal.
Feed back resistor that sets the closed loop gain in conjunction with Rin.
Supply bypass capacitor that provides power supply filtering.
Bypass pin capacitor that provides half supply filtering.
Low pass filter capacitor allowing to cut the high frequency (low pass filter cut-off
frequency 1/ (2 x Pi x R
feed
x C
feed
Closed loop gain in BTL configuration = 2 x (R
DFN8 exposed pad is electrically connected to pin 7. See DFN8 package
information on page 29 for more information.
4/33 Doc ID 9309 Rev 13
)).
feed
/ Rin).
TS4990Electrical characteristics
3 Electrical characteristics
Table 4.Electrical characteristics when VCC= +5 V, GND = 0 V, T
(unless otherwise specified)
SymbolParameterMin.Typ.Max.Unit
amb
=25°C
I
I
STBY
V
P
THD + N
PSRR
Supply current
CC
No input signal, no load
Standby current
No input signal, V
Output offset voltage
oo
No input signal, RL = 8 Ω
Output power
out
THD = 1% max, F = 1kHz, R
Total harmonic distortion + noise
= 1W
P
out
, AV = 2, 20Hz ≤ F ≤ 20kHz, RL = 8 Ω
rms
Power supply rejection ratio
RL = 8 Ω, AV = 2, V
F = 217Hz
(1)
= GND, RL = 8Ω
STBY
= 8 Ω
L
(2)
= 200mVpp, input grounded
ripple
F = 1kHz
t
WU
t
STBY
V
STBYH
V
STBYL
Φ
GM
GBP
R
OUT-GND
1. Standby mode is active when V
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(V
V
Wake-up time (Cb = 1 µF)90130ms
Standby time (Cb = 1 µF)10µs
Standby voltage level high1.3V
Standby voltage level low0.4V
Phase margin at unity gain
M
RL = 8 Ω, CL = 500 pF
Gain margin
R
= 8 Ω, CL = 500 pF
L
Gain bandwidth product
= 8 Ω
R
L
Resistor output to GND (V
V
out1
V
out2
.
CC
STBY
≤ V
STBY
is tied to GND.
out
)/rms(V
STBYL
ripple
)
)). V
is the sinusoidal signal superimposed upon
ripple
3.76mA
101000nA
110mV
0.91.2W
0.2%
55
55
62
64
dB
65Degrees
15dB
1.5MHz
3
kΩ
43
Doc ID 9309 Rev 135/33
Electrical characteristicsTS4990
Table 5.Electrical characteristics when VCC= +3.3 V, GND = 0 V, T
amb
= 25°C
(unless otherwise specified)
SymbolParameterMin.Typ.Max.Unit
I
CC
I
STBY
V
P
Supply current
No input signal, no load
Standby current
No input signal, V
Output offset voltage
oo
No input signal, RL = 8 Ω
Output power
out
THD = 1% max, F = 1 kHz, RL = 8 Ω
(1)
STBY
= GND, RL = 8 Ω
Total harmonic distortion + noise
THD + N
= 400 mW
P
out
, AV = 2, 20 Hz ≤ F ≤ 20 kHz,
rms
RL=8 Ω
(2)
= 200mVpp, input grounded
PSRR
Power supply rejection ratio
RL = 8 Ω, AV = 2, V
ripple
F = 217 Hz
F = 1 kHz
t
WU
t
STBY
V
STBYH
V
STBYL
Φ
GM
GBP
R
OUT-GND
1. Standby mode is active when V
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(V
V
Wake-up time (Cb = 1 µF)110140ms
Standby time (Cb = 1 µF)10µs
Standby voltage level high1.2V
Standby voltage level low0.4V
Phase margin at unity gain
M
RL = 8 Ω, CL = 500 pF
Gain margin
= 8 Ω, CL = 500 pF
R
L
Gain bandwidth product
= 8 Ω
R
L
Resistor output to GND (V
V
out1
V
out2
.
CC
STBY
≤ V
STBY
is tied to GND.
out
)/rms(V
STBYL
ripple
)). V
)
is the sinusoidal signal superimposed upon
ripple
3.36mA
101000nA
110mV
375500mW
0.1%
55
55
61
63
dB
65Degrees
15dB
1.5MHz
4
kΩ
44
6/33 Doc ID 9309 Rev 13
TS4990Electrical characteristics
Table 6.Electrical characteristics when V
= 2.6V, GND = 0V, T
CC
= 25°C (unless
amb
otherwise specified)
SymbolParameterMin.Typ.Max.Unit
I
CC
I
STBY
V
P
Supply current
No input signal, no load
Standby current
No input signal, V
Output offset voltage
oo
No input signal, RL = 8 Ω
Output power
out
THD = 1% max, F = 1 kHz, RL = 8 Ω
(1)
STBY
= GND, RL = 8 Ω
Total harmonic distortion + noise
THD + N
= 200 mW
P
out
, AV = 2, 20 Hz ≤ F ≤ 20 kHz,
rms
RL=8 Ω
(2)
= 200 mVpp, input grounded
PSRR
Power supply rejection ratio
RL = 8 Ω, AV = 2, V
ripple
F = 217 Hz
F = 1 kHz
t
WU
t
STBY
V
STBYH
V
STBYL
Φ
GM
GBP
R
OUT-GND
1. Standby mode is active when V
2. All PSRR data limits are guaranteed by production sampling tests.
Dynamic measurements - 20*log(rms(V
V
Wake-up time (Cb = 1 µF)125150ms
Standby time (Cb = 1 µF)10µs
Standby voltage level high1.2V
Standby voltage level low0.4V
Phase margin at unity gain
M
RL = 8 Ω, CL = 500 pF
Gain margin
= 8 Ω, CL = 500 pF
R
L
Gain bandwidth product
= 8 Ω
R
L
Resistor output to GND (V
V
out1
V
out2
.
CC
STBY
≤ V
STBY
is tied to GND.
out
)/rms(V
STBYL
ripple
)
)). V
is the sinusoidal signal superimposed upon
ripple
3.16mA
101000nA
110mV
220300mW
0.1%
55
55
60
62
dB
65Degrees
15dB
1.5MHz
6
kΩ
46
Doc ID 9309 Rev 137/33
Electrical characteristicsTS4990
0.1110100100010000
-60
-40
-20
0
20
40
60
-200
-160
-120
-80
-40
0
Gain
Phase
Gain (dB)
Frequency (kHz)
Vcc = 3.3V
RL = 8
Ω
Tamb = 25°C
Phase (°)
Figure 2.Open loop frequency responseFigure 3.Open loop frequency response
60
40
20
0
Gain (dB)
-20
-40
-60
0.1110100100010000
Phase
Vcc = 5V
RL = 8
Ω
Tamb = 25°C
Frequency (kHz)
Gain
0
-40
-80
-120
-160
-200
Phase (°)
Figure 4.Open loop frequency responseFigure 5.Open loop frequency response
60
40
20
0
Gain (dB)
-20
-40
-60
0.1110100100010000
Vcc = 2.6V
RL = 8
Ω
Tamb = 25°C
Phase
Gain
Frequency (kHz)
0
-40
-80
-120
-160
-200
100
80
60
40
Phase (°)
20
Gain (dB)
0
-20
-40
0.1110100100010000
Vcc = 5V
CL = 560pF
Tamb = 25°C
Gain
Phase
Frequency (kHz)
0
-40
-80
-120
-160
-200
Phase (°)
Figure 6.Open loop frequency responseFigure 7.Open loop frequency response