ST TMMBAT 47, TMMBAT 48 User Manual
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TMMBAT 47 |
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TMMBAT 48 |
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SMALL SIGNAL SCHOTTKY DIODES |
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DESCRIPTION |
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General purpose, metal to silicon diodes featuring |
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MINIMELF |
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very low turn-on voltage and fast switching. |
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These devices have integrated protection against |
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(Glass) |
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excessive voltage such as electrostatic discharges. |
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ABSOLUTE RATINGS (limiting values) |
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Symbol |
Parameter |
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TMMBAT47 |
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TMMBAT48 |
Unit |
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VRRM |
Repetitive Peak Reverse Voltage |
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20 |
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40 |
V |
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IF |
Forward Continuous Current |
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Tl = 25 °C |
350 |
mA |
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IFRM |
Repetitive Peak Fordward Current |
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tp ≤ 1s |
1 |
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A |
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δ ≤ 0.5 |
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IFSM |
Surge non Repetitive Forward Current |
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tp = 10ms |
7.5 |
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A |
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tp = 1s |
1.5 |
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Ptot |
Power Dissipation |
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Tl = 25 °C |
330 |
mW |
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Tstg |
Storage and Junction Temperature Range |
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- 65 to 150 |
°C |
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Tj |
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- 65 to 125 |
°C |
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TL |
Maximum Temperature for Soldering during 15s |
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260 |
°C |
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THERMAL RESISTANCE |
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Symbol |
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Test Conditions |
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Value |
Unit |
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Rth(j-l) |
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Junction-leads |
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300 |
°C/W |
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August 1999 Ed: 1A |
1/5 |
TMMBAT 47/TMMBAT 48
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol |
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Test Conditions |
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Min. |
Typ. |
Max. |
Unit |
VBR |
Tj = 25°C |
IR = 10μA |
TMMBAT47 |
20 |
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V |
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Tj = 25°C |
IR = 25μA |
TMMBAT48 |
40 |
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VF* |
Tj = 25°C |
IF = 0.1mA |
All Types |
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0.25 |
V |
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Tj = 25°C |
IF = 1mA |
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0.3 |
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Tj = 25°C |
IF = 10mA |
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0.4 |
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Tj = 25°C |
IF = 30mA |
TMMBAT47 |
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0.5 |
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Tj = 25°C |
IF = 150mA |
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0.8 |
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Tj = 25°C |
IF = 300mA |
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1 |
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Tj = 25°C |
IF = 50mA |
TMMBAT48 |
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0.5 |
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Tj = 25°C |
IF = 200mA |
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0.75 |
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Tj = 25°C |
IF = 500mA |
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0.9 |
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IR* |
Tj = 25°C |
VR = 1.5V |
All Types |
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1 |
μA |
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Tj = 60°C |
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10 |
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Tj = 25°C |
VR = 10V |
TMMBAT47 |
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4 |
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Tj = 60°C |
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20 |
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Tj = 25°C |
VR = 20V |
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10 |
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Tj = 60°C |
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30 |
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Tj = 25°C |
VR = 10V |
TMMBAT48 |
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2 |
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Tj = 60°C |
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15 |
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Tj = 25°C |
VR = 20V |
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5 |
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Tj = 60°C |
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25 |
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Tj = 25°C |
VR = 40V |
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25 |
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Tj = 60°C |
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50 |
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DYNAMIC CHARACTERISTICS
Symbol |
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Test Conditions |
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Min. |
Typ. |
Max. |
Unit |
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C |
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Tj = 25°C |
VR = 0V |
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f = 1MHz |
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20 |
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pF |
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Tj = 25°C |
VR = 1V |
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12 |
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trr |
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Tj = 25°C |
IF = 10mA VR = 1V |
irr = 1mA RL = 100Ω |
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10 |
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ns |
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* Pulse test: |
tp ≤ 300μs δ < 2%. |
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